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Register a new userHigh real-space resolution measurement of the local structure of Ga_1-xIn_xAs using x-ray diffraction
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High real-space resolution atomic pair distribution functions (PDF)s from the alloy series Ga_1-xIn_xAs have been obtained using high-energy x-ray diffraction. The first peak in the PDF is resolved as a doublet due to the presence of two nearest neighbor bond lengths, Ga-As and In-As, as previously observed using XAFS. The widths of nearest, and higher, neighbor pairs are analyzed by separating the strain broadening from the thermal motion. The strain broadening is five times larger for distant atomic neighbors as compared to nearest neighbors. The results are in agreement with model calculations.
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High real-space-resolution atomic pair distribution functions of La_(1-x)Ca_(x)MnO_3 (x=0.12, 0.25 and 0.33) have been measured using high-energy x-ray powder diffraction to study the size and shape of the MnO_6 octahedron as a function of temperature and doping. In the paramagnetic insulating phase we find evidence for three distinct bond-lengths (~ 1.88, 1.95 and 2.15A) which we ascribe to Mn^{4+}-O, Mn^{3+}-O short and Mn^{3+}-O long bonds respectively. In the ferromagnetic metallic (FM) phase, for x=0.33 and T=20K, we find a single Mn-O bond-length; however, as the metal-insulator transition is approached either by increasing T or decreasing x, intensity progressively appears around r=2.15 and in the region 1.8 - 1.9A suggesting the appearance of Mn^{3+}-O long bonds and short Mn^{4+}-O bonds. This is strong evidence that charge localized and delocalized phases coexist close to the metal-insulator transition in the FM phase.
Investment in brighter sources and larger and faster detectors has accelerated the speed of data acquisition at national user facilities. The accelerated data acquisition offers many opportunities for discovery of new materials, but it also presents a daunting challenge. The rate of data acquisition far exceeds the current speed of data quality assessment, resulting in less than optimal data and data coverage, which in extreme cases forces recollection of data. Herein, we show how this challenge can be addressed through development of an approach that makes routine data assessment automatic and instantaneous. Through extracting and visualizing customized attributes in real time, data quality and coverage, as well as other scientifically relevant information contained in large datasets is highlighted. Deployment of such an approach not only improves the quality of data but also helps optimize usage of expensive characterization resources by prioritizing measurements of highest scientific impact. We anticipate our approach to become a starting point for a sophisticated decision-tree that optimizes data quality and maximizes scientific content in real time through automation. With these efforts to integrate more automation in data collection and analysis, we can truly take advantage of the accelerating speed of data acquisition.
Nearest and higher neighbor distances as well as bond length distributions (static and thermal) of the In_xGa_(1-x)As (0<x<1) semiconductor alloys have been obtained from high real-space resolution atomic pair distribution functions (PDFs). Using this structural information, we modeled the local atomic displacements in In_xGa_(1-x)As alloys. From a supercell model based on the Kirkwood potential, we obtained 3-D As and (In,Ga) ensemble averaged probability distributions. This clearly shows that As atom displacements are highly directional and can be represented as a combination of <100> and <111> displacements. Examination of the Kirkwood model indicates that the standard deviation (sigma) of the static disorder on the (In,Ga) sublattice is around 60% of the value on the As sublattice and the (In,Ga) atomic displacements are much more isotropic than those on the As sublattice. The single crystal diffuse scattering calculated from the Kirkwood model shows that atomic displacements are most strongly correlated along <110> directions.
The ability to control carrier concentration based on the extent of Cu solubility in the $mathrm{Cu_{2x}Hg_{2-x}GeTe_4}$ alloy compound (where 0 $leq$ x $leq$ 1) makes $mathrm{Cu_{2x}Hg_{2-x}GeTe_4}$ an interesting case study in the field of thermoelectrics. While Cu clearly plays a role in this process, it is unknown exactly how Cu incorporates into the $mathrm{Cu_{2x}Hg_{2-x}GeTe_4}$ crystal structure and how this affects the carrier concentration. In this work, we use a combination of resonant energy X-ray diffraction (REXD) experiments and density functional theory (DFT) calculations to elucidate the nature of Cu incorporation into the $mathrm{Cu_{2x}Hg_{2-x}GeTe_4}$ structure. REXD across the $mathrm{Cu_k}$ edge facilitates the characterization of Cu incorporation in the $mathrm{Cu_{2x}Hg_{2-x}GeTe_4}$ alloy and enables direct quantification of anti-site defects. We find that Cu substitutes for Hg at a 2:1 ratio, wherein Cu annihilates a vacancy and swaps with a Hg atom. DFT calculations confirm this result and further reveal that the incorporation of Cu occurs preferentially on one of the z = 1/4 or z = 3/4 planes before filling the other plane. Furthermore, the amount of $mathrm{Cu_{Hg}}$ anti-site defects quantified by REXD was found to be directly proportional to the experimentally measured hole concentration, indicating that the $mathrm{Cu_{Hg}}$ defects are the driving force for tuning carrier concentration in the $mathrm{Cu_{2x}Hg_{2-x}GeTe_4}$ alloy. The link uncovered here between crystal structure, or more specifically anti-site defects, and carrier concentration can be extended to similar cation-disordered material systems and will aid the development of improved thermoelectric and other functional materials through defect engineering.
YbBiPt is a heavy-fermion compound possessing significant short-range antiferromagnetic correlations below a temperature of $T^{textrm{*}}=0.7$ K, fragile antiferromagnetic order below $T_{rm{N}}=0.4$ K, a Kondo temperature of $T_{textrm{K}} approx1$ K, and crystalline-electric-field splitting on the order of $E/k_{textrm{B}}=1,textrm{-},10$ K. Whereas the compound has a face-centered-cubic lattice at ambient temperature, certain experimental data, particularly those from studies aimed at determining its crystalline-electric-field scheme, suggest that the lattice distorts at lower temperature. Here, we present results from high-resolution, high-energy x-ray diffraction experiments which show that, within our experimental resolution of $approx6,textrm{-},10times10^{-5}$ AA, no structural phase transition occurs between $T=1.5$ and $50$ K. In combination with results from dilatometry measurements, we further show that the compounds thermal expansion has a minimum at $approx18$ K and a region of negative thermal expansion for $9<T<18$ K. Despite diffraction patterns taken at $1.6$ K which indicate that the lattice is face-centered cubic and that the Yb resides on a crystallographic site with cubic point symmetry, we demonstrate that the linear thermal expansion may be modeled using crystalline-electric-field level schemes appropriate for Yb$^{3+}$ residing on a site with either cubic or less than cubic point symmetry.
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