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Local Tunneling Study of Three-Dimensional Order Parameter in the $pi$-band of Al-doped MgB$_2$ Single Crystals

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 Added by Filippo Giubileo Dr
 Publication date 2006
  fields Physics
and research's language is English




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We have performed local tunneling spectroscopy on high quality Mg$_{1-x}$Al$_x$B$_2$ single crystals by means of Variable Temperature Scanning Tunneling Spectroscopy (STS) in magnetic field up to 3 Tesla. Single gap conductance spectra due to c-axis tunneling were extensively measured, probing different amplitudes of the three-dimensional $Delta_pi$ as a function of Al content. Temperature and magnetic field dependences of the conductance spectra were studied in S-I-N configuration: the effect of the doping resulted in a monotonous reduction of the locally measured $T_C$ down to 24K for x=0.2. On the other hand, we have found that the gap amplitude shows a maximum value $Delta_pi= 2.3$ meV for x=0.1, while the $Delta_pi / T_C$ ratio increases monotonously with doping. The locally measured upper critical field was found to be strongly related to the gap amplitude, showing the maximum value $H_{c2}simeq3T$ for x=0.1 substituted samples. For this Al concentration the data revealed some spatial inhomogeneity in the distribution of $Delta_pi$ on nanometer scale.



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The electronic properties of the carbon substituted MgB$_2$ single crystals are reported. The carbon substitution drops T$_c$ below 2 K. In-plane resistivity shows a remarkable increase in residual resistivity by C-substitution, while the change of in-plane/out-of-plane Hall coefficients is rather small. Raman scattering spectra indicate that the E$_{2g}$-phonon frequency radically hardens with increasing the carbon-content, suggesting the weakening of electron-phonon coupling. Another striking C-effect is the increases of the second critical fields in both in-plane and out-of-plane directions, accompanied by a reduction in the anisotropy ratio. The possible changes in the electronic state and the origin of T$_c$-suppression by C-substitution are discussed.
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