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Register a new userInfluence of interface structure on electronic properties and Schottky barriers in Fe/GaAs magnetic junctions
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The electronic and magnetic properties of Fe/GaAs(001) magnetic junctions are investigated using first-principles density-functional calculations. Abrupt and intermixed interfaces are considered, and the dependence of charge transfer, magnetization profiles, Schottky barrier heights, and spin polarization of densities of states on interface structure is studied. With As-termination, an abrupt interface with Fe is favored, while Ga-terminated GaAs favors the formation of an intermixed layer with Fe. The Schottky barrier heights are particularly sensitive to the abruptness of the interface. A significant density of states in the semiconducting gap arises from metal interface states. These spin-dependent interface states lead to a significant minority spin polarization of the density of states at the Fermi level that persists well into the semiconductor, providing a channel for the tunneling of minority spins through the Schottky barrier. These interface-induced gap states and their dependence on atomic structure at the interface are discussed in connection with potential spin-injection applications.
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Combining density-functional theory calculations and microscopic tight-binding models, we investigate theoretically the electronic and magnetic properties of individual substitutional transition-metal impurities (Mn and Fe) positioned in the vicinity of the (110) surface of GaAs. For the case of the $[rm Mn^{2+}]^0$ plus acceptor-hole (h) complex, the results of a tight-binding model including explicitly the impurity $d$-electrons are in good agreement with approaches that treat the spin of the impurity as an effective classical vector. For the case of Fe, where both the neutral isoelectronic $[rm Fe^{3+}]^0$ and the ionized $[rm Fe^{2+}]^-$ states are relevant to address scanning tunneling microscopy (STM) experiments, the inclusion of $d$-orbitals is essential. We find that the in-gap electronic structure of Fe impurities is significantly modified by surface effects. For the neutral acceptor state $[{rm Fe}^{2+}, h]^0$, the magnetic-anisotropy dependence on the impurity sublayer resembles the case of $[{rm Mn}^{2+}, h]^0$. In contrast, for $[{rm Fe}^{3+}]^{0}$ electronic configuration the magnetic anisotropy behaves differently and it is considerably smaller. For this state we predict that it is possible to manipulate the Fe moment, e.g. by an external magnetic field, with detectable consequences in the local density of states probed by STM.
Magnetic oxyselenides have been the topic of research for several decades being first of interest in the context of photoconductivity and thermoelectricity owing to their intrinsic semiconducting properties and ability to tune the energy gap through metal ion substitution. More recently, interest in the oxyselenides has experienced a resurgence owing to the possible relation to strongly correlated phenomena given the fact that many oxyslenides share a similar structure to unconventional superconducting pnictides and chalcogenides. The two dimensional nature of many oxyselenide systems also draws an analogy to cuprate physics where a strong interplay between unconventional electronic phases and localised magnetism has been studied for several decades. It is therefore timely to review the physics of the oxyselenides in the context of the broader field of strongly correlated magnetism and electronic phenomena. Here we review the current status and progress in this area of research with the focus on the influence of lanthanides and transition metal ions on the intertwined magnetic and electronic properties of oxyselenides. The emphasis of the review is on the magnetic properties and comparisons are made with iron based pnictide and chalcogenide systems.
We have studied NpPdSn by means of the heat capacity, electrical resistivity, Seebeck and Hall effect, $^{237}$Np M{o}ssbauer spectroscopy, and neutron diffraction measurements in the temperature range 2-300 K and under magnetic fields up to 14 T. NpPdSn orders antiferromagnetically below the Neel temperature $T_N$ = 19 K and shows localized magnetism of Np$^{3+}$ ion with a a doubly degenerate ground state. In the magnetic state the electrical resistivity and heat capacity are characterized by electron-magnon scattering with spin-waves spectrum typical of anisotropic antiferromagnets. An enhanced Sommerfeld coefficient and typical behavior of magnetorestistivity, Seebeck and Hall coefficients are all characteristic of systems with strong electronic correlations. The low temperature antiferromagnetic state of NpPdSn is verified by neutron diffraction and $^{237}$Np M{o}ssbauer spectroscopy and possible magnetic structures are discussed.
We have studied the influence of alloying copper with amorphous arsenic sulfide on the electronic properties of this material. In our computer-generated models, copper is found in two-fold near-linear and four-fold square-planar configurations, which apparently correspond to Cu(I) and Cu(II) oxidation states. The number of overcoordinated atoms, both arsenic and sulfur, grows with increasing concentration of copper. Overcoordinated sulfur is found in trigonal planar configuration, and overcoordinated (four-fold) arsenic is in tetrahedral configuration. Addition of copper suppresses the localization of lone-pair electrons on chalcogen atoms, and localized states at the top of the valence band are due to Cu 3d orbitals. Evidently, these additional Cu states, which are positioned at the same energies as the states due to ([As4]-)-([S_3]+) pairs, are responsible for masking photodarkening in Cu chalcogenides.
We applied soft X-ray absorption spectroscopy to study the Ti L-edge in ferroelectric capacitors using a modified total electron yield method. The inner photo currents and the X-ray absorption spectra were polarization state dependent. The results are explained on the basis of photo electric effects and the inner potential in the ferroelectric capacitors as a result of back-to-back Schottky barriers superimposed by the potential due to the depolarization field. In general, the presented method offers the opportunity to investigate the electronic structure of buried metal-insulator and metal-semiconductor interfaces in thin film devices. Corresponding author: [email protected]
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