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Register a new userBand Mapping in One-Step Photoemission Theory: Multi-Bloch-Wave Structure of Final States and Interference Effects
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A novel Bloch-waves based one-step theory of photoemission is developed within the augmented plane wave formalism. Implications of multi-Bloch-wave structure of photoelectron final states for band mapping are established. Interference between Bloch components of initial and final states leads to prominent spectral features with characteristic frequency dispersion experimentally observed in VSe_2 and TiTe_2. Interference effects together with a non-free-electron nature of final states strongly limit the applicability of the common direct transitions band mapping approach, making the tool of one-step analysis indispensable.
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Three-dimensional band structure of unoccupied and occupied states of the prototype layered material TiTe2 is determined focusing on the GammaA line of the Brillouin zone. Dispersions and lifetimes of the unoccupied states, acting as the final states in the photoemission process, are determined from a very-low-energy electron diffraction experiment supported by first-principles calculations based on a Bloch waves treatment of multiple scattering. The experimental unoccupied states of TiTe2 feature dramatic non-free-electron effects such as multiband composition and non-parabolic dispersions. The valence band layer-perpendicular dispersions are then determined from a photoemission experiment consistently interpreted on the basis of the experimental final states to achieve control over the 3-dimensional wavevector. The experimental results demonstrate the absence of the Te 4pz* Fermi surface pocket at the Gamma point and significant self-energy renormalization of the valence band dispersions. Photoemission calculations based on a novel Bloch waves formalism within the one-step theory reveal limitations of understanding photoemission from layered materials such as TiTe2 in terms of direct transitions.
A theoretical frame for two-photon photoemission is derived from the general theory of pump-probe photoemission, assuming that not only the probe but also the pump pulse is sufficiently weak. This allows us to use a perturbative approach to compute the lesser Green function within the Keldysh formalism. Two-photon photoemission spectroscopy is a widely used analytical tool to study non-equilibrium phenomena in solid materials. Our theoretical approach aims at a material-specific, realistic and quantitative description of the time-dependent spectrum based on a picture of effectively independent electrons as described by the local-density approximation in band-structure theory. To this end we follow Pendrys one-step theory of the photoemission process as close as possible and heavily make use of concepts of multiple-scattering theory, such as the representation of the final state by a time-reversed low-energy electron diffraction state. The formalism is fully relativistic and allows for a quantitative calculation of the time-dependent photocurrent for moderately correlated systems like simple metals or more complex compounds like topological insulators. An application to the Ag(100) surface is discussed in detail.
A theoretical frame for pump-probe photoemission is presented. The approach is based on a general formulation using the Keldysh formalism for the lesser Greens function to describe the real-time evolution of the electronic degrees of freedom in the initial state after a strong pump pulse that drives the system out of equilibrium. The final state is represented by a time-reversed low-energy electron diffraction state. Our one-step description is related to Pendrys original formulation of the photoemission process as close as possible. The formalism allows for a quantitative calculation of time-dependent photocurrent for simple metals where a picture of effectively independent electrons is assumed as reliable. The theory is worked out for valence- and core-electron excitations. It comprises the study of different relativistic effects as a function of the pump-probe delay.
In this work, we provide an effective model to evaluate the one-electron dipole matrix elements governing optical excitations and the photoemission process of single-layer (SL) and bilayer (BL) transition metal dichalcogenides. By utilizing a $vec{k} cdot vec{p}$ Hamiltonian, we calculate the photoemission intensity as observed in angle-resolved photoemission from the valence bands around the $bar{K}$-valley of MoS$_2$. In SL MoS$_2$ we find a significant masking of intensity outside the first Brillouin zone, which originates from an in-plane interference effect between photoelectrons emitted from the Mo $d$ orbitals. In BL MoS$_2$ an additional inter-layer interference effect leads to a distinctive modulation of intensity with photon energy. Finally, we use the semiconductor Bloch equations to model the optical excitation in a time- and angle-resolved pump-probe photoemission experiment. We find that the momentum dependence of an optically excited population in the conduction band leads to an observable dichroism in both SL and BL MoS$_2$.
Angle-resolved photoelectron spectroscopy is an extremely powerful probe of materials to access the occupied electronic structure with energy and momentum resolution. However, it remains blind to those dynamic states above the Fermi level that determine technologically relevant transport properties. In this work, we extend band structure mapping into the unoccupied states and across the entire Brillouin zone by using a state-of-the-art high repetition rate, extreme ultraviolet fem- tosecond light source to probe optically excited samples. The wide-ranging applicability and power of this approach are demonstrated by measurements on the 2D semiconductor WSe2, where the energy-momentum dispersion of valence and conduction bands are observed in a single experiment. This provides a direct momentum-resolved view not only on the complete out-of-equilibrium band gap but also on its renormalization induced by electron-hole interaction and screening. Our work establishes a new benchmark for measuring the band structure of materials, with direct access to the energy-momentum dispersion of the excited-state spectral function.
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