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Register a new userSurface acoustic wave investigations of the metal-to-insulator transition of V2O3 thin films on lithium niobate
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Thin V2O3 films were deposited on a piezoelectric substrate by electron-beam evaporation. Surface acoustic waves (SAW) were generated by interdigital-transducers (IDTs). The attenuation and sound velocity was investigated from 260K to 10K, providing an insight into the temperature dependent electrical, dielectrical and elastic properties of V2O3 at the metal to insulator transition.
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$V_2O_3$ has long been studied as a prototypical strongly correlated material. The difficulty in obtaining clean, well ordered surfaces, however, hindered the use of surface sensitive techniques to study its electronic structure. Here we show by mean of X-ray diffraction and electrical transport that thin films prepared by pulsed laser deposition can reproduce the functionality of bulk $V_2O_3$. The same films, when transferred in-situ, show an excellent surface quality as indicated by scanning tunnelling microscopy and low energy electron diffraction, representing a viable approach to study the metal-insulator transition (MIT) in $V_2O_3$ by means of angle-resolved photoemission spectroscopy. Combined, these two aspects pave the way for the use of $V_2O_3$ thin films in device-oriented heterostructures.
The discovery of novel phases of matter is at the core of modern physics. In quantum materials, subtle variations in atomic-scale interactions can induce dramatic changes in macroscopic properties and drive phase transitions. Despite their importance, the mesoscale processes underpinning phase transitions often remain elusive because of the vast differences in timescales between atomic and electronic changes and thermodynamic transformations. Here, we photoinduce and directly observe with x-ray scattering an ultrafast enhancement of the structural long-range order in the archetypal Mott system V2O3. Despite the ultrafast change in crystal symmetry, the change of unit cell volume occurs an order of magnitude slower and coincides with the insulator-to-metal transition. The decoupling between the two structural responses in the time domain highlights the existence of a transient photoinduced precursor phase, which is distinct from the two structural phases present in equilibrium. X-ray nanoscopy reveals that acoustic phonons trapped in nanoscale blocks govern the dynamics of the ultrafast transition into the precursor phase, while nucleation and growth of metallic domains dictate the duration of the slower transition into the metallic phase. The enhancement of the long-range order before completion of the electronic transition demonstrates the critical role the non-equilibrium structural phases play during electronic phase transitions in correlated electrons systems.
Ultrathin epitaxial films of EuNiO3 were grown on a series of substrates traversing highly compressive (- 2.4%) to highly tensile (2.5%) lattice mismatch. X-ray diffraction measurements showed the expected c-lattice parameter shift for compressive strain, but no detectable shift for tensilely strained substrates, while reciprocal space mapping confirmed the tensile strained film maintained epitaxial coherence. Transport measurements showed a successively (from tensile to compressive) lower resistance and a complete suppression of the metalinsulator transition at highly compressive lattice mismatch. Corroborating these findings, X-ray absorption spectroscopy measurements revealed a strong multiplet splitting in the tensile samples that progressively weakens with increasing compressive strain that, combined with cluster calculations, showed enhanced covalence between Ni-d and O-p orbitals leads to the metallic state.
Despite decades of experimental and theoretical efforts, the origin of metal-insulator transitions (MIT) in strongly-correlated materials is one of the main longstanding problems in condensed matter physics. An archetypal example is V2O3, where electronic, structural and magnetic phase transitions occur simultaneously. This remarkable concomitance makes the understanding of the origin of the MIT a challenge due to the many degrees of freedom at play. In this work, we demonstrate that magnetism plays the key dominant role. By acting on the magnetic degree of freedom, we reveal an anomalous behaviour of the magnetoresistance of V2O3, which provides strong evidence that the origin of the MIT in V2O3 is the opening of an antiferromagnetic gap in the presence of strong electronic correlations.
We have synthesized epitaxial NdNiO$_{3}$ ultra-thin films in a layer-by-layer growth mode under tensile and compressive strain on SrTiO$_{3}$ (001) and LaAlO$_3$ (001), respectively. A combination of X-ray diffraction, temperature dependent resistivity, and soft X-ray absorption spectroscopy has been applied to elucidate electronic and structural properties of the samples. In contrast to the bulk NdNiO$_{3}$, the metal-insulator transition under compressive strain is found to be completely quenched, while the transition remains under the tensile strain albeit modified from the bulk behavior.
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