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Register a new userOptically-patterned nuclear doughnuts in GaAs/MnAs heterostructures
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We demonstrate a scheme for optically patterning nuclear spin polarization in semiconductor/ferromagnet heterostructures. A scanning time-resolved Kerr rotation microscope is used to image the nuclear spin polarization that results when GaAs/MnAs epilayers are illuminated with a focused laser having a Gaussian profile. Rather than tracking the intensity profile of the laser spot, these images reveal that the nuclear polarization forms an annular lateral structure having circular symmetry with a dip rather than a peak at its center.
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We exploit ferromagnetic imprinting to create complex laterally defined regions of nuclear spin polarization in lithographically patterned MnAs/GaAs epilayers grown by molecular beam epitaxy (MBE). A time-resolved Kerr rotation microscope with approximately 1 micron spatial resolution uses electron spin precession to directly image the GaAs nuclear polarization. These measurements indicate that the polarization varies from a maximum under magnetic mesas to zero several microns from the mesa perimeter, resulting in large (10**4 T/m) effective field gradients. The results reveal a flexible scheme for lateral engineering of spin-dependent energy landscapes in the solid state.
We have studied the electronic structure of hexagonal MnAs, as epitaxial continuous film on GaAs(001) and as nanocrystals embedded in GaAs, by Mn 2p core-level photoemission spectroscopy. Configuration-interaction analyses based on a cluster model show that the ground state of the embedded MnAs nanocrystals is dominated by a d5 configuration that maximizes the local Mn moment. Nanoscaling and strain significantly alter the properties of MnAs. Internal strain in the nanocrystals results in reduced p-d hybridization and enhanced ionic character of the Mn-As bonding interactions. The spatial confinement and reduced p-d hybridization in the nanocrystals lead to enhanced d-electron localization, triggering d-d electron correlations and enhancing local Mn moments. These changes in the electronic structure of MnAs have an advantageous effect on the Curie temperature of the nanocrystals, which is measured to be remarkably higher than that of bulk MnAs.
Quantum devices formed in high-electron-mobility semiconductor heterostructures provide a route through which quantum mechanical effects can be exploited on length scales accessible to lithography and integrated electronics. The electrostatic definition of quantum dots in semiconductor heterostructure devices intrinsically involves the lithographic fabrication of intricate patterns of metallic electrodes. The formation of metal/semiconductor interfaces, growth processes associated with polycrystalline metallic layers, and differential thermal expansion produce elastic distortion in the active areas of quantum devices. Understanding and controlling these distortions presents a significant challenge in quantum device development. We report synchrotron x-ray nanodiffraction measurements combined with dynamical x-ray diffraction modeling that reveal lattice tilts with a depth-averaged value up to 0.04 deg. and strain on the order of 10^-4 in the two-dimensional electron gas (2DEG) in a GaAs/AlGaAs heterostructure. Elastic distortions in GaAs/AlGaAs heterostructures modify the potential energy landscape in the 2DEG due to the generation of a deformation potential and an electric field through the piezoelectric effect. The stress induced by metal electrodes directly impacts the ability to control the positions of the potential minima where quantum dots form and the coupling between neighboring quantum dots.
The honeycomb connection of carbon atoms by covalent bonds in a macroscopic two-dimensional scale leads to fascinating graphene and solar cell based on graphene/silicon Schottky diode has been widely studied. For solar cell applications, GaAs is superior to silicon as it has a direct band gap of 1.42 eV and its electron mobility is six times of that of silicon. However, graphene/GaAs solar cell has been rarely explored. Herein, we report graphene/GaAs solar cells with conversion efficiency (Eta) of 10.4% and 15.5% without and with anti-reflection layer on graphene, respectively. The Eta of 15.5% is higher than the state of art efficiency for graphene/Si system (14.5%). Furthermore, our calculation points out Eta of 25.8% can be reached by reasonably optimizing the open circuit voltage, junction ideality factor, resistance of graphene and metal/graphene contact. This research strongly support graphene/GaAs hetero-structure solar cell have great potential for practical applications.
We report optically detected nuclear magnetic resonance (ODNMR) measurements on small ensembles of nuclear spins in single GaAs quantum dots. Using ODNMR we make direct measurements of the inhomogeneous Knight field from a photo-excited electron which acts on the nuclei in the dot. The resulting shifts of the NMR peak can be optically controlled by varying the electron occupancy and its spin orientation, and lead to strongly asymmetric lineshapes at high optical excitation. The all-optical control of the NMR lineshape will enable position-selective control of small groups of nuclear spins in a dot. Our calculations also show that the asymmetric NMR peak lineshapes can provide information on the volume of the electron wave-function, and may be used for measurements of non-uniform distributions of atoms in nano-structures.
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