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Register a new userFluctuations, line tensions, and correlation times of nanoscale islands on surfaces
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We analyze in detail the fluctuations and correlations of the (spatial) Fourier modes of nano-scale single-layer islands on (111) fcc crystal surfaces. We analytically show that the Fourier modes of the fluctuations couple due to the anisotropy of the crystal, changing the power spectrum of the fluctuations, and that the actual eigenmodes of the fluctuations are the appropriate linear combinations of the Fourier modes. Using kinetic Monte Carlo simulations with bond-counting parameters that best match realistic energy barriers for hopping rates, we deduce absolute line tensions as a function of azimuthal orientation from the analyses of the fluctuation of each individual mode. The autocorrelation functions of these modes give the scaling of the correlation times with wavelength, providing us with the rate-limiting kinetics driving the fluctuations, here step-edge diffusion. The results for the energetic parameters are in reasonable agreement with available experimental data for Pb(111) surfaces, and we compare the correlation times of island-edge fluctuations to relaxation times of quenched Pb crystallites.
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Formation and evolution of fragmentation instabilities in fractal islands, obtained by deposition of silver clusters on graphite, are studied. The fragmentation dynamics and subsequent relaxation to the equilibrium shapes are controlled by the deposition conditions and cluster composition. Sharing common features with other materials breakup phenomena, the fragmentation instability is governed by the length-to-width ratio of the fractal arms.
The linear reversal mechanism in FePt grains ranging from 2.316 nm to 5.404 nm has been simulated using atomistic spin dynamics, parametrized from ab-initio calculations. The Curie temperature and the critical temperature (T*), at which the linear reversal mechanism occurs, are observed to decrease with system size whilst the temperature window T* < T < TC increases. The reversal paths close to the Curie temperature have been calculated, showing that for decreasing system size the reversal path becomes more elliptic at lower temperatures, consistent with the decrease in the Curie temperature arising from finite size effects. Calculations of the minimum pulse duration show faster switching in small grains and is qualitatively described by the Landau-Lifshitz-Bloch equation with finite size atomistic parameterization, which suggests that multiscale modeling of FePt down to a grain size of ~ 3.5 nm is possible.
We have studied the surface modifications as well as the surface roughness of the InP(111) surfaces after 1.5 MeV Sb ion implantations. Scanning Probe Microscope (SPM) has been utilized to investigate the ion implanted InP(111) surfaces. We observe the formation of nanoscale defect structures on the InP surface. The density, height and size of the nanostructures have been investigated here as a function of ion fluence. The rms surface roughness, of the ion implanted InP surfaces, demonstrates two varied behaviors as a function of Sb ion fluence. Initially, the roughness increases with increasing fluence. However, after a critical fluence the roughness decreases with increasing fluence. We have further applied the technique of Raman scattering to investigate the implantation induced modifications and disorder in InP. Raman Scattering results demonstrate that at the critical fluence, where the decrease in surface roughness occurs, InP lattice becomes amorphous.
The nanostructure of hydrogenated amorphous silicon (a Si:H) is studied by a combination of small-angle X-ray (SAXS) and neutron scattering (SANS) with a spatial resolution of 0.8 nm. The a-Si:H materials were deposited using a range of widely varied conditions and are representative for this class of materials. We identify two different phases which are embedded in the a-Si:H matrix and quantified both according to their scattering cross-sections. First, 1.2 nm sized voids (multivacancies with more than 10 missing atoms) which form a superlattice with 1.6 nm void-to-void distance are detected. The voids are found in concentrations as high as 6*10^19 ccm in a-Si:H material that is deposited at a high rate. Second, dense ordered domains (DOD) that are depleted of hydrogen with 1 nm average diameter are found. The DOD tend to form 10-15 nm sized aggregates and are largely found in all a-Si:H materials considered here. These quantitative findings make it possible to understand the complex correlation between structure and electronic properties of a-Si:H and directly link them to the light-induced formation of defects. Finally, a structural model is derived, which verifies theoretical predictions about the nanostructure of a-Si:H.
We report on the experimental observation by scanning tunneling microscopy at low temperature of ring-like features that appear around Co metal clusters deposited on a clean (110) oriented surface of cleaved p-type InAs crystals. These features are visible in spectroscopic images within a certain range of negative tunneling bias voltages due to the presence of a negative differential conductance in the current-voltage dependence. A theoretical model is introduced, which takes into account non-equilibrium effects in the small tunneling junction area. In the framework of this model the appearance of the ring-like features is explained in terms of interference effects between electrons tunneling directly and indirectly (via a Co island) between the tip and the InAs surface.
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