No Arabic abstract
We study static and dynamical properties of fluxons in a long annular Josephson junction (JJ) with a current injected at one point and collected back at a close point. Uniformly distributed dc bias current is applied too. We demonstrate that, in the limit of the infinitely small size of the current dipole, the critical value of the bias current density, above which static phase distributions do not exist, that was recently found (in the Fraunhofers analytical form) for the annular JJ with the length much smaller than the Josephson penetration length, is valid irrespective of the junctions length, including infinitely long JJs. In a long annular JJ, the dipole generates free fluxon(s) if the bias current density exceeds the critical value. For long JJs, we also find another critical value (in an analytical form too), which is always slightly smaller than the Fraunhofer value, except for points where both values vanish. The static phase configuration which yields the new critical value is based on an unstable fluxon-antifluxon bound state, therefore it will probably not manifest itself in the usual (classical) regime. However, it provides for a dominating instanton configuration for tunnel birth of a free fluxon, hence it is expected to determine a quantum-birth threshold for fluxons at ultra-low temperatures. We also consider the interaction of a free fluxon with the complex consisting of the current dipole and antifluxon pinned by it. A condition for suppression of the net interaction force, which makes the long JJ nearly homogeneous for the free fluxon, is obtained in an analytical form. The analytical results are compared with numerical simulations.
The properties of phase escape in a dc SQUID at 25 mK, which is well below quantum-to-classical crossover temperature $T_{cr}$, in the presence of strong resonant ac driving have been investigated. The SQUID contains two Nb/Al-AlO$_{x} $/Nb tunnel junctions with Josephson inductance much larger than the loop inductance so it can be viewed as a single junction having adjustable critical current. We find that with increasing microwave power $W$ and at certain frequencies $ u $ and $ u $/2, the single primary peak in the switching current distribution, textrm{which is the result of macroscopic quantum tunneling of the phase across the junction}, first shifts toward lower bias current $I$ and then a resonant peak develops. These results are explained by quantum resonant phase escape involving single and two photons with microwave-suppressed potential barrier. As $W$ further increases, the primary peak gradually disappears and the resonant peak grows into a single one while shifting further to lower $I$. At certain $W$, a second resonant peak appears, which can locate at very low $I$ depending on the value of $ u $. Analysis based on the classical equation of motion shows that such resonant peak can arise from the resonant escape of the phase particle with extremely large oscillation amplitude resulting from bifurcation of the nonlinear system. Our experimental result and theoretical analysis demonstrate that at $Tll T_{cr}$, escape of the phase particle could be dominated by classical process, such as dynamical bifurcation of nonlinear systems under strong ac driving.
We theoretically study spin current through ferromagnet (F) in a Josephson junction composed of s-wave superconductors and two layers of ferromagnets. Using quasiclassical theory, we show that the long-range spin current can be driven by the superconducting phase difference without voltage drop. The origin of this spin current is due to spin-triplet Cooper pairs (STCs) formed by electrons of equal-spin, which are induced by proximity effect inside the F. We find that the spin current carried by the STCs exhibits long-range propagation in the F even where the Josephson charge current is practically zero. We also show that this spin current persists over a remarkably longer distance than the ordinary spin current carried by spin polarized conduction electrons in the F. Our results thus indicate the promising potential of Josephson junctions based on multilayer ferromagnets for spintronics applications with long-range propagating spin current.
Nonreciprocal microwave transmission through a long Josephson junction in the flux-flow regime is studied analytically and numerically within the framework of the perturbed sine-Gordon model. We demonstrate that the maximum attenuation of the transmitted power occurs when the direction of the flux flow is opposite to the direction of the microwave propagation. This attenuation is nonreciprocal with respect to the flux-flow direction and can be enhanced by increasing the system length and proper impedance matching of the junction ends to external transmission line.
We investigate the coherent energy and thermal transport in a temperature-biased long Josephson tunnel junction, when a Josephson vortex, i.e., a soliton, steadily drifts driven by an electric bias current. We demonstrate that thermal transport through the junction can be controlled by the bias current, since it determines the steady-state velocity of the drifting soliton. We study the effects on thermal transport of the damping affecting the soliton dynamics. In fact, a soliton locally influences the power flowing through the junction and can cause the variation of the temperature of the device. When the soliton speed increases approaching its limiting value, i.e., the Swihart velocity, we demonstrate that the soliton-induces thermal effects significantly modify. Finally, we discuss how the appropriate material selection of the superconductors forming the junction is essential, since short quasiparticle relaxation times are required to observe fast thermal effects.
Josephson junctions with an intrinsic phase shift of pi, so-called pi Josephson junctions, can be realized by a weak link of a d-wave superconductor with an appropriate boundary geometry. A model for the pairing potential of an according weak link is introduced which allows for the calculation of the influence of geometric parameters and temperature. From this model, current-phase relations and the critical current of the device are derived. The range of validity of the model is determined by comparison with selfconsistent solutions.