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Register a new userA study of Mg adsorption on Si(001) surface from first principles
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First-principles calculations using density functional theory based on norm-conserving pseudopotentials have been performed to investigate the Mg adsorption on the Si(001) surface for 1/4, 1/2 and 1 monolayer coverages. For both 1/4 and 1/2 ML coverages it has been found that the most favorable site for the Mg adsorption is the cave site between two dimer rows consistent with the recent experiments. For the 1 ML coverage we have found that the most preferable configuration is when both Mg atoms on 2x1 reconstruction occupy the two shallow sites. We have found that the minimum energy configurations for 1/4 ML coverage is a 2x2 reconstruction while for the 1/2 and 1 ML coverages they are 2x1.
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First-principles calculations using density functional theory based on norm-conserving pseudopotentials have been performed to investigate the Cs adsorption on the Si(001) surface for 0.5 and 1 ML coverages. We found that the saturation coverage corresponds to 1 ML adsorption with two Cs atoms occupying the double layer model sites. While the 0.5 ML covered surface is of metallic nature, we found that 1 ML of Cs adsorption corresponds to saturation coverage and leads to a semiconducting surface. The results for the electronic behavior and surface work function suggest that adsorption of Cs takes place via polarized covalent bonding.
Several dissociated and two non-dissociated adsorption structures of the phenol molecule on the Si(001)-(2 times 1) surface are studied using density functional theory with various exchange and correlation functionals. The relaxed structures and adsorption energies are obtained and it is found that the dissociated structures are energetically more favourable than the non-dissociated structures. However, the ground state energies alone do not determine which structure is obtained experimentally. To elucidate the situation core level shift spectra for Si 2p and C 1s states are simulated and compared with experimentally measured spectra. Several transition barriers were calculated in order to determine which adsorption structures are kinetically accessible. Based on these results we conclude that the molecule undergoes the dissociation of two hydrogen atoms on adsorption.
FeAs- single layer is tested as a simple model for LaFeAsO and BaFe2As2 based on first-principles calculations using generalized gradient approximation (GGA) and GGA+U. The calculated single- layer geometric and electronic structures are inconsistent with that of bulk materials. The bulk collinear antiferromagnetic ground state is failed to be obtained in the FeAs- single layer. The monotonous behavior of the Fe-As distance in z direction upon electron or hole doping is also in contrast with bulk materials. Our results indicate that, in LaFeAsO and BaFe2As2, interactions between FeAs layer and other layers beyond simple charge doping are important, and a single FeAs layer may not represent a good model for Fe based superconducting materials.
We investigate the adsorption of a single tetracyanoethylene (TCNE) molecule on the silver (001) surface. Adsorption structures, electronic properties, and scanning tunneling microscopy (STM) images are calculated within density-functional theory. Adsorption occurs most favorably in on-top configuration, with the C=C double bond directly above a silver atom and the four N atoms bound to four neighboring Ag atoms. The lowest unoccupied molecular orbital of TCNE becomes occupied due to electron transfer from the substrate. This state dominates the electronic spectrum and the STM image at moderately negative bias. We discuss and employ a spatial extrapolation technique for the calculation of STM and scanning tunneling spectroscopy (STS) images. Our calculated images are in good agreement with experimental data.
In the heavy fermion materials, the characteristic energy scales of many exotic strongly correlated phenomena (Kondo effect, magnetic order, superconductivity, etc.) are at milli-electron-volt order, implying that the heavy fermion materials are surface sensitive. Here, we investigate the electronic structures for Si- and Ce-terminated surfaces of CeRh$_2$Si$_2$ by first-principles methods. Our research reveals three notable impacts of surface effects on electronic structures, which are consistent with recent angle-resolved photoemission spectroscopy (ARPES) experiments. Firstly, the relaxation of surface crystal structures changes the relative position of Fermi level, adjusts the dispersion of bands and enhances the Kondo resonance. Secondly, the decrease of the hybridization between the Ce-4$f$ and conduction electrons in the surface layer leads to a weaker Kondo resonance peak and the shift of spin-orbit bands. Thirdly, the variation of crystal electric field around surface Ce atoms affects the splitting of Kondo resonance peaks, and also pushes down the lower-Hubbard bands of surface 4$f$ electrons. Moreover, we find the characteristic of bulks lower-Hubbard bands, which was overlooked in previous works. Our investigation suggests that these surface effects are potentially important and highlighted in the future researches on properties of strongly correlated materials.
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