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Ab initio study of the beta$-tin->Imma->sh phase transitions in silicon and germanium

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 Publication date 2003
  fields Physics
and research's language is English




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We have investigated the structural sequence of the high-pressure phases of silicon and germanium. We have focussed on the cd->beta-tin->Imma->sh phase transitions. We have used the plane-wave pseudopotential approach to the density-functional theory implemented within the Vienna ab-initio simulation package (VASP). We have determined the equilibrium properties of each structure and the values of the critical parameters including a hysteresis effect at the phase transitions. The order of the phase transitions has been obtained alternatively from the pressure dependence of the enthalpy and of the internal structure parameters. The commonly used tangent construction is shown to be very unreliable. Our calculations identify a first-order phase transition from the cd to the beta-tin and from the Imma to the sh phase, and they indicate the possibility of a second-order phase-transition from the beta-tin to the Imma phase. Finally, we have derived the enthalpy barriers between the phases.



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We present a new interpretation of measured Raman frequencies of a high-pressure structure of Silicon which was assigned previously to the beta-tin phase. Our results show that the beta-tin->Imma->sh phase transitions have been already indicated in this experiment which was performed before the discovery of the Imma phase. We have calculated phonon-dispersion curves for the beta-tin, Imma, and sh phases of silicon using the plane-wave pseudopotential approach to the density-functional theory and the density-functional perturbation theory within the local density approximation. With the new assignment, the calculated phonon frequencies display an excellent agreement with the experimental data, and can be also used to determine precisely the transition pressure for the Imma->beta-tin phase transition. The sh->Imma transition is accompanied by soft modes.
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