No Arabic abstract
We have investigated the structural sequence of the high-pressure phases of silicon and germanium. We have focussed on the cd->beta-tin->Imma->sh phase transitions. We have used the plane-wave pseudopotential approach to the density-functional theory implemented within the Vienna ab-initio simulation package (VASP). We have determined the equilibrium properties of each structure and the values of the critical parameters including a hysteresis effect at the phase transitions. The order of the phase transitions has been obtained alternatively from the pressure dependence of the enthalpy and of the internal structure parameters. The commonly used tangent construction is shown to be very unreliable. Our calculations identify a first-order phase transition from the cd to the beta-tin and from the Imma to the sh phase, and they indicate the possibility of a second-order phase-transition from the beta-tin to the Imma phase. Finally, we have derived the enthalpy barriers between the phases.
We present a new interpretation of measured Raman frequencies of a high-pressure structure of Silicon which was assigned previously to the beta-tin phase. Our results show that the beta-tin->Imma->sh phase transitions have been already indicated in this experiment which was performed before the discovery of the Imma phase. We have calculated phonon-dispersion curves for the beta-tin, Imma, and sh phases of silicon using the plane-wave pseudopotential approach to the density-functional theory and the density-functional perturbation theory within the local density approximation. With the new assignment, the calculated phonon frequencies display an excellent agreement with the experimental data, and can be also used to determine precisely the transition pressure for the Imma->beta-tin phase transition. The sh->Imma transition is accompanied by soft modes.
We investigate the pressure-induced metal-insulator transition from diamond to beta-tin in bulk Silicon, using quantum Monte Carlo (QMC) and density functional theory (DFT) approaches. We show that it is possible to efficiently describe many-body effects, using a variational wave function with an optimized Jastrow factor and a Slater determinant. Variational results are obtained with a small computational cost and are further improved by performing diffusion Monte Carlo calculations and an explicit optimization of molecular orbitals in the determinant. Finite temperature corrections and zero point motion effects are included by calculating phonon dispersions in both phases at the DFT level. Our results indicate that the theoretical QMC (DFT) transition pressure is significantly larger (smaller) than the accepted experimental value. We discuss the limitation of DFT approaches due to the choice of the exchange and correlation functionals and the difficulty to determine consistent pseudopotentials within the QMC framework, a limitation that may significantly affect the accuracy of the technique.
The precise knowledge of the atomic order in monocrystalline alloys is fundamental to understand and predict their physical properties. With this perspective, we utilized laser-assisted atom probe tomography to investigate the three-dimensional distribution of atoms in non-equilibrium epitaxial Sn-rich group IV SiGeSn ternary semiconductors. Different atom probe statistical analysis tools including frequency distribution analysis, partial radial distribution functions, and nearest neighbor analysis were employed in order to evaluate and compare the behavior of the three elements to their spatial distributions in an ideal solid solution. This atomistic-level analysis provided clear evidence of an unexpected repulsive interaction between Sn and Si leading to the deviation of Si atoms from the theoretical random distribution. This departure from an ideal solid solution is supported by first principal calculations and attributed to the tendency of the system to reduce its mixing enthalpy throughout the layer-by-layer growth process.
Ab-initio density functional theory (DFT) calculations of the relative stability of anatase and rutile polymorphs of TiO2 were carried using all-electron atomic orbitals methods with local density approximation (LDA). The rutile phase exhibited a moderate margin of stability of ~ 3 meV relative to the anatase phase in pristine material. From computational analysis of the formation energies of Si, Al, Fe and F dopants of various charge states across different Fermi level energies in anatase and in rutile, it was found that the cationic dopants are most stable in Ti substitutional lattice positions while formation energy is minimised for F- doping in interstitial positions. All dopants were found to considerably stabilise anatase relative to the rutile phase, suggesting the anatase to rutile phase transformation is inhibited in such systems with the dopants ranked F>Si>Fe>Al in order of anatase stabilisation strength. Al and Fe dopants were found to act as shallow acceptors with charge compensation achieved through the formation of mobile carriers rather than the formation of anion vacancies.
${beta}$- Eucryptite (LiAlSiO4) is a potential electrolyte for Li- ion battery due to its high Li- ion conductivity and very small volume thermal expansion coefficient. We have performed ab-initio molecular dynamics simulations of $beta$- Eucryptite to study the origin of high temperature superionic phase transition in this material. The simulations are able to provide the microscopic understanding of the one -dimensional superionicity that occurs along the hexagonal c-axis and is associated with the order-disorder nature of the phase transition. The Li ionic conductivity is found to enhance due to the anisotropic negative thermal expansion along hexagonal c-axis. The introduction of defects in the crystal like, excess Li in interstitial sites, Li vacancy and O vacancy are found to significantly increase the ionic conductivity and hence might reduce the temperature of the superionic phase transition in this material.