No Arabic abstract
The electronic structures of the localized $5f$ systems UTSn (T=Ni, Pd) have been investigated using photoemission spectroscopy (PES). The extracted U $5f$ PES spectra of UTSn (T=Ni, Pd) exhibit a broad peak centered at $sim 0.3$ eV below $rm E_F$ with rather small spectral weight near $rm E_F$ (N$_f$($rm E_F$)). The small N$_f$($rm E_F$) in UTSn is found to be correlated with the T $d$ PES spectra that have a very low density of states (DOS) near $rm E_F$. The high-resolution PES spectra for UTSn provide the V-shaped reduced metallic DOS near $rm E_F$ but do not reveal any appreciable changes in their electronic structures across the magnetic phase transitions. A possible origin for the reduced N$_f$($rm E_F$) in UTSn is ascribed to the hybridization to the very low T $d$ DOS at $rm E_F$. Comparison of the measured PES spectra to the LSDA+$U$ band structure calculation reveals a reasonably good agreement for UPdSn, but not so for UNiSn.
Electronic structures of single crystalline black phosphorus were studied by state-of-art angleresolved photoemission spectroscopy. Through high resolution photon energy dependence measurements, the band dispersions along out-of-plane and in-plane directions are experimentally determined. The electrons were found to be more localized in the ab-plane than that is predicted in calculations. Beside the kz-dispersive bulk bands, resonant surface state is also observed in the momentum space. Our finds strongly suggest that more details need to be considered to fully understand the electronic properties of black phosphorus theoretically.
Electronic structures of Zn$_{1-x}$Co$_x$O have been investigated using photoemission spectroscopy (PES) and x-ray absorption spectroscopy (XAS). The Co 3d states are found to lie near the top of the O $2p$ valence band, with a peak around $sim 3$ eV binding energy. The Co $2p$ XAS spectrum provides evidence that the Co ions in Zn$_{1-x}$Co$_{x}$O are in the divalent Co$^{2+}$ ($d^7$) states under the tetrahedral symmetry. Our finding indicates that the properly substituted Co ions for Zn sites will not produce the diluted ferromagnetic semiconductor property.
The electronic structures of the Heusler type compounds Fe$_{3-x}V$_x$Si in the concentration range between x = 0 and x = 1 have been probed by photoemission spectroscopy (PES). The observed shift of Si 2p core- level and the main valence band structres indicate a chemical potential shift to higher energy with increasing x. It is also clarified that the density of state at Fermi edge is owing to the collaboration of V 3d and Fe 3d derived states. Besides the decrease of the spectral intensity near Fermi edge with increasing x suggests the formation of pseudo gap at large x.
The electronic properties, exchange interactions, finite-temperature magnetism, and transport properties of random quaternary Heusler Ni$_{2}$MnSn alloys doped with Cu- and Pd-atoms are studied theoretically by means of {it ab initio} calculations over the entire range of dopant concentrations. While the magnetic moments are only weakly dependent on the alloy composition, the Curie temperatures exhibit strongly non-linear behavior with respect to Cu-doping in contrast with an almost linear concentration dependence in the case of Pd-doping. The present parameter-free theory agrees qualitatively and also reasonably well quantitatively with the available experimental results. An analysis of exchange interactions is provided for a deeper understanding of the problem. The dopant atoms perturb electronic structure close to the Fermi energy only weakly and the residual resistivity thus obeys a simple Nordheim rule. The dominating contribution to the temperature-dependent resistivity is due to thermodynamical fluctuations originating from the spin-disorder, which, according to our calculations, can be described successfully via the disordered local moments model. Results based on this model agree fairly well with the measured values of spin-disorder induced resistivity.
Angle-resolved spectroscopy is the most powerful technique to investigate the electronic band structure of crystalline solids. To completely characterize the electronic structure of topological materials, one needs to go beyond band structure mapping and probe the texture of the Bloch wavefunction in momentum-space, associated with Berry curvature and topological invariants. Because phase information is lost in the process of measuring photoemission intensities, retrieving the complex-valued Bloch wavefunction from photoemission data has yet remained elusive. In this Article, we introduce a novel measurement methodology and observable in extreme ultraviolet angle-resolved photoemission spectroscopy, based on continuous modulation of the ionizing radiation polarization axis. By tracking the energy- and momentum-resolved amplitude and phase of the photoemission modulation upon polarization variation, we reconstruct the Bloch wavefunction of prototypical semiconducting transition metal dichalcogenide 2H-WSe$_2$ with minimal theory input. This novel experimental scheme, which is articulated around the manipulation of the photoionization transition dipole matrix element, in combination with a simple tight-binding theory, is general and can be extended to provide insights into the Bloch wavefunction of many relevant crystalline solids.