No Arabic abstract
We establish that a doping-driven first-order metal-to-metal transition, from a pseudogap metal to Fermi Liquid, can occur in correlated quantum materials. Our result is based on the exact Dynamical Mean Field Theory solution of the Dimer Hubbard Model. This transition elucidates the origin of many exotic features in doped Mott materials, like the pseudogap in cuprates, incoherent bad metals, enhanced compressibility and orbital selective Mott transition. This phenomenon is suggestive to be at the roots of the many exotic phases appearing in the phase diagram of correlated materials.
We study the doping-driven Mott metal-insulator transition for multi-orbital Hubbard models with Hunds exchange coupling at finite temperatures. As in the single-orbital Hubbard model, the transition is of first-order within dynamical mean field theory, with a coexistence region where two solutions can be stabilized. We find, that in the presence of finite Hunds coupling, the insulating phase is connected to a badly metallic phase, which extends to surprisingly large dopings. While fractional power-law behavior of the self-energies on the Matsubara axis is found on both sides of the transition, a regime with frozen local moments develops only on the branch connected to the insulating phase.
We consider how electron-phonon interaction influences the insulator-metal transitions driven by doping in the strongly correlated system. Using the polaronic version of the generalized tight-binding method, we investigate a multiband two-dimensional model taking into account both Holstein and Su-Schrieffer-Heeger types of electron-lattice contributions. For adiabatic ratio of the hopping parameter and the phonon field energy, different types of band structure evolution are observed in a wide electron-phonon parameter range. We demonstrate the relationship between transition features and such properties of the system as the polaron and bipolaron crossovers, pseudogap behavior of various origin, orbital selectivity, and the redistribution of the spectral weight due to the electron-phonon interaction.
Experimental evidence for the possible universality classes of the metal-insulator transition (MIT) in two dimensions (2D) is discussed. Sufficiently strong disorder, in particular, changes the nature of the transition. Comprehensive studies of the charge dynamics are also reviewed, describing evidence that the MIT in a 2D electron system in silicon should be viewed as the melting of the Coulomb glass. Comparisons are made to recent results on novel 2D materials and quasi-2D strongly correlated systems, such as cuprates.
Experimental results on the metal-insulator transition and related phenomena in strongly interacting two-dimensional electron systems are discussed. Special attention is given to recent results for the strongly enhanced spin susceptibility, effective mass, and thermopower in low-disordered silicon MOSFETs.
Ultrafast electron delocalization induced by a fs laser pulse is a well-known process and is the initial step for important applications such as fragmentation of molecules or laser ablation in solids. It is well understood that an intense fs laser pulse can remove several electrons from an atom within its pulse duration. [1] However, the speed of electron localization out of an electron gas, the capture of an electron by ion, is unknown. Here, we demonstrate that electronic localization out of the conduction band can occur within only a few hundred femtoseconds. This ultrafast electron localization into 4f states has been directly quantified by transient x-ray absorption spectroscopy following photo-excitation of a Eu based correlated metal with a fs laser pulse. Our x-ray experiments show that the driving force for this process is either an ultrafast reduction of the energy of the 4f states, a change of their bandwidth or an increase of the hybridization between the 4f and the 3d states. The observed ultrafast electron localization process raises further basic questions for our understanding of electron correlations and their coupling to the lattice.