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Fano resonance from a one-dimensional topological photonic crystal

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 Publication date 2021
  fields Physics
and research's language is English




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An ultra-compact one-dimensional topological photonic crystal (1D-TPC) is designed in a single mode silicon bus-waveguide to generate Fano resonance lineshape. The Fano resonance comes from the interference between the discrete topological boundary state of the 1D-TPC and the continuum high-order leaky mode of the bus-waveguide. Standalone asymmetric Fano resonance lineshapes are obtained experimentally in the waveguide transmission spectrum with a maximum extinction ratio of 33 dB and a slope ratio of 10 dB/nm over a broadband flat background.



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We report results of a systematic analysis of spatial solitons in the model of 1D photonic crystals, built as a periodic lattice of waveguiding channels, of width D, separated by empty channels of width L-D. The system is characterized by its structural duty cycle, DC = D/L. In the case of the self-defocusing (SDF) intrinsic nonlinearity in the channels, one can predict new effects caused by competition between the linear trapping potential and the effective nonlinear repulsive one. Several species of solitons are found in the first two finite bandgaps of the SDF model, as well as a family of fundamental solitons in the semi-infinite gap of the system with the self-focusing nonlinearity. At moderate values of DC (such as 0.50), both fundamental and higher-order solitons populating the second bandgap of the SDF model suffer destabilization with the increase of the total power. Passing the destabilization point, the solitons assume a flat-top shape, while the shape of unstable solitons gets inverted, with local maxima appearing in empty layers. In the model with narrow channels (around DC =0.25), fundamental and higher-order solitons exist only in the first finite bandgap, where they are stable, despite the fact that they also feature the inverted shape.
91 - Xiang Xi , Kang-Ping Ye , 2020
The recent realizations of topological valley phase in photonic crystal, an analog of gapped valleytronic materials in electronic system, are limited to the valley Chern number of one. In this letter, we present a new type of valley phase that can have large valley Chern number of two or three. The valley phase transitions between the different valley Chern numbers (from one to three) are realized by changing the configuration of the unit cell. We demonstrate that these new topological phases can guide the wave propagation robustly along the domain wall of sharp bent. Our results are promising for the exploration of new topological phenomena in photonic systems.
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