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Register a new userEngineering of Ferroic Orders in Thin Films by Anionic Substitution
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Added by
Andres Camilo Garcia Castro
Publication date
2021
fields
Physics
and research's language is
English
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Multiferroics are a unique class of materials where magnetic and ferroelectric orders coexist. The research on multiferroics contributes significantly to the fundamental understanding of the strong correlations between different material degrees of freedom and provides an energy-efficient route toward the electrical control of magnetism. While multiple ABO3 oxide perovskites have been identified as being multiferroic, their magnetoelectric coupling strength is often weak, necessitating the material search in different compounds. Here, we report the observation of room-temperature multiferroic orders in multi-anion SrNbO3-xNx thin films. In these samples, the multi-anion state enables the room-temperature ferromagnetic ordering of the Nb d-electrons. Simultaneously, we find ferroelectric responses that originate from the structural symmetry breaking associated with both the off-center displacements of Nb and the geometric displacements of Sr, depending on the relative O-N arrangements within the Nb-centered octahedra. Our findings not only diversify the available multiferroic material pool but also demonstrate a new multiferroism design strategy via multi-anion engineering.
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We show that misfit strain originated from the film-substrate lattice mismatch strongly increases the value of the quadratic magnetoelectric coupling. The giant magnetoelectric coupling, size effects and misfit strain cause strong changes of ferroic films phase diagrams at zero external magnetic and electric fields, in particular, the transformation of antiferromagnetic phase into ferromagnetic or ferrimagnetic ones for compressive or tensile misfit strains correspondingly as well as thickness induced paramagnetic or/and paraelectric phases appearance. Ferromagnetism appearance and magnetoelectric coupling increase in thin ferroelectric-antiferromagnetic films is in agreement with available experimental data and opens the way for tailoring of ferroic films magnetic and electric properties.
The critical impact of epitaxial stress on the stabilization of the ferroelectric orthorhombic phase of hafnia is proved. Epitaxial bilayers of Hf0.5Zr0.5O2 and La0.67Sr0.33MnO3 electrodes were grown on a set of single crystalline oxide 001-oriented, cubic or pseudocubic setting, substrates with lattice parameter in the 3.71 - 4.21 A range. The lattice strain of the La0.67Sr0.33MnO3 electrode, determined by the lattice mismatch with the substrate, is critical in the stabilization of the orthorhombic phase of Hf0.5Zr0.5O2. On La0.67Sr0.33MnO3 electrodes tensile strained most of the Hf0.5Zr0.5O2 film is orthorhombic, whereas the monoclinic phase is favored when La0.67Sr0.33MnO3 is relaxed or compressively strained. Therefore, the Hf0.5Zr0.5O2 films on TbScO3 and GdScO3 substrates present substantially enhanced ferroelectric polarization in comparison to films on other substrates, including the commonly used SrTiO3. The capability of having epitaxial doped HfO2 films with controlled phase and polarization is of major interest for a better understanding of the ferroelectric properties and paves the way for fabrication of ferroelectric devices based on nanometric HfO2 films.
Transition-metal oxides with an ABO$_3$ perovskite structure exhibit strongly entangled structural and electronic degrees of freedom and thus, one expects to unveil exotic phases and properties by acting on the lattice through various external stimuli. Using the Jahn-Teller active praseodymium vanadate Pr$^{3+}$V$^{3+}$O$_3$ compound as a model system, we show that PrVO$_3$ Neel temperature T$_N$ can be raised by 40 K with respect to the bulk when grown as thin films. Using advanced experimental techniques, this enhancement is unambiguously ascribed to a tetragonality resulting from the epitaxial compressive strain experienced by the films. First-principles simulations not only confirm experimental results, but they also reveal that the strain promotes an unprecedented orbital-ordering of the V$^{3+}$ d electrons, strongly favouring antiferromagnetic interactions. These results show that an accurate control of structural aspects is the key for unveiling unexpected phases in oxides.
Since the discovery of graphene, two-dimensional materials with atomic level thickness have rapidly grown to be a prosperous field of physical science with interdisciplinary interests, for their fascinating properties and broad applications. Very recently, the experimental observation of ferromagnetism in Cr$_2$Ge$_2$Te$_6$ bilayer and CrI$_3$ monolayer opened a door to pursuit long-absent intrinsic magnetic orders in two-dimensional materials. Meanwhile, the ferroelectricity was also experimentally found in SnTe monolayer and CuInP$_2$S$_6$ few layers. The emergence of these ferroic orders in the two-dimensional limit not only brings new challenges to our physical knowledge, but also provides more functionalities for potential applications. Among various two-dimensional ferroic ordered materials, transition/rare-earth metal halides and their derivants are very common. In this Research Update, based on transition/rare-earth metal halides, the physics of various ferroic orders in two-dimensional will be illustrated. The potential applications based on their magnetic and polar properties will also be discussed.
Antiferromagnetic thin films typically exhibit a multi-domain state, and control of the antiferromagnetic Neel vector is challenging as antiferromagnetic materials are robust to magnetic perturbations. By relying on anisotropic in-plane strain engineering of epitaxial thin films of the prototypical antiferromagnetic material LaFeO3, uniaxial Neel vector control is demonstrated. Orthorhombic (011)- and (101)-oriented DyScO3, GdScO3 and NdGaO3 substrates are used to engineer different anisotropic in-plane strain states. The anisotropic in-plane strain stabilises structurally monodomain monoclinic LaFeO3 thin films. The uniaxial Neel vector is found along the tensile strained b axis, contrary to bulk LaFeO3 having the Neel vector along the shorter a axis, and no magnetic domains are found. Hence, anisotropic strain engineering is a viable tool for designing unique functional responses, further enabling antiferromagnetic materials for mesoscopic device technology.
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