Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userImplementing Multiple Modes of the Perpendicular Magnetization Switching within a Single Spin Orbit Torque Device
187
0
0.0
(
0
)
Ask ChatGPT about the research
No Arabic abstract
Spin orbit torque (SOT) has been considered as one of the promising technologies for the next-generation magnetic random access memory (MRAM). So far, SOT has been widely utilized for inducing various modes of magnetization switching. However, it is challenging to integrate multiple modes of magnetization switching together. In this work we propose a method for implementing both unipolar and bipolar switching of the perpendicular magnetization within a single SOT device. The mode of switching could be easily altered by tuning the amplitude of the applied current. We show that the field-like torque plays an important role in the switching process. The field-like torque induces the precession of the magnetization in the case of unipolar switching, whereas it helps to generate an effective z-component torque in the case of bipolar switching. In addition, the influence of key parameters on the mode of switching is discussed. Our proposal could be used to design novel reconfigurable logic circuits in the near future.
rate research
Read More
Reducing energy dissipation while increasing speed in computation and memory is a long-standing challenge for spintronics research. In the last 20 years, femtosecond lasers have emerged as a tool to control the magnetization in specific magnetic materials at the picosecond timescale. However, the use of ultrafast optics in integrated circuits and memories would require a major paradigm shift. An ultrafast electrical control of the magnetization is far preferable for integrated systems. Here we demonstrate reliable and deterministic control of the out-of-plane magnetization of a 1 nm-thick Co layer with single 6 ps-wide electrical pulses that induce spin-orbit torques on the magnetization. We can monitor the ultrafast magnetization dynamics due to the spin-orbit torques on sub-picosecond timescales, thus far accessible only by numerical simulations. Due to the short duration of our pulses, we enter a counter-intuitive regime of switching where heat dissipation assists the reversal. Moreover, we estimate a low energy cost to switch the magnetization, projecting to below 1fJ for a (20 nm)^3 cell. These experiments prove that spintronic phenomena can be exploited on picosecond time-scales for full magnetic control and should launch a new regime of ultrafast spin torque studies and applications.
Symmetry breaking is a characteristic to determine which branch of a bifurcation system follows upon crossing a critical point. Specifically, in spin-orbit torque (SOT) devices, a fundamental question arises: how to break the symmetry of the perpendicular magnetic moment by the in-plane spin polarization? Here, we show that the chiral symmetry breaking by the DMI can induce the deterministic SOT switching of the perpendicular magnetization. By introducing a gradient of saturation magnetization or magnetic anisotropy, non-collinear spin textures are formed by the gradient of effective SOT strength, and thus the chiral symmetry of the SOT-induced spin textures is broken by the DMI, resulting in the deterministic magnetization switching. We introduce a strategy to induce an out-of-plane (z) gradient of magnetic properties, as a practical solution for the wafer-scale manufacture of SOT devices.
A numerical investigation is conducted for a single spin-torque oscillator under the non-linear region. A large angle precession triggers the generation of multiple modes without any feedbacked circuits and/or magnetic couplings with neighboring oscillators. Our simulations show that a single eigenmode of a given spin-torque oscillator can trigger up to six discrete modes as the sideband modes. These findings will offer the new functionality to the STO for developing the spintronic logic circuits.
In this work, we study magnetization switching induced by spin-orbit torque in W(Pt)/Co/NiO heterostructures with variable thickness of heavy-metal layers W and Pt, perpendicularly magnetized Co layer and an antiferromagnetic NiO layer. Using current-driven switching, magnetoresistance and anomalous Hall effect measurements, perpendicular and in-plane exchange bias field were determined. Several Hall-bar devices possessing in-plane exchange bias from both systems were selected and analyzed in relation to our analytical switching model of critical current density as a function of Pt and W thickness, resulting in estimation of effective spin Hall angle and perpendicular effective magnetic anisotropy. We demonstrate in both the Pt/Co/NiO and the W/Co/NiO systems the deterministic Co magnetization switching without external magnetic field which was replaced by in-plane exchange bias field. Moreover, we show that due to a higher effective spin Hall angle in W than in Pt-systems the relative difference between the resistance states in the magnetization current switching to difference between the resistance states in magnetic field switching determined by anomalous Hall effect ($Delta R/Delta R_{text{AHE}}$) is about twice higher in W than Pt, while critical switching current density in W is one order lower than in Pt-devices. The current switching stability and training process is discussed in detail.
We demonstrated current-induced four-state magnetization switching in a trilayer system using spin-orbit torques. The memory device contains two Co layers with different perpendicular magnetic anisotropy, separated by a space layer of Pt. Making use of the opposite spin current at the top and bottom surface of the middle Pt layer, magnetization of both Co layers can be switched oppositely by the spin-orbit torques with different critical switching currents. By changing the current pulse forms through the device, the four magnetic states memory was demonstrated. Our device provides a new idea for the design of low power and high density spin-orbit torque devices.
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
