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Register a new userValley-Polarized Quantum Anomalous Hall Phase in Bilayer Graphene with Layer-Dependent Proximity Effects
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Realizations of some topological phases in two-dimensional systems rely on the challenge of jointly incorporating spin-orbit and magnetic exchange interactions. Here, we predict the formation and control of a fully valley-polarized quantum anomalous Hall effect in bilayer graphene, by separately imprinting spin-orbit and magnetic proximity effects in different layers. This results in varying spin splittings for the conduction and valence bands, which gives rise to a topological gap at a single Dirac cone. The topological phase can be controlled by a gate voltage and switched between valleys by reversing the sign of the exchange interaction. By performing quantum transport calculations in disordered systems, the chirality and resilience of the valley-polarized edge state are demonstrated. Our findings provide a promising route to engineer a topological phase that could enable low-power electronic devices and valleytronic applications.
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Berry phase plays an important role in determining many physical properties of quantum systems. However, a Berry phase altering energy spectrum of a quantum system is comparatively rare. Here, we report an unusual tunable valley polarized energy spectra induced by continuously tunable Berry phase in Bernal-stacked bilayer graphene quantum dots. In our experiment, the Berry phase of electron orbital states is continuously tuned from about pi to 2pi by perpendicular magnetic fields. When the Berry phase equals pi or 2pi, the electron states in the two inequivalent valleys are energetically degenerate. By altering the Berry phase to noninteger multiples of pi, large and continuously tunable valley polarized energy spectra are detected in our experiment. The observed Berry phase-induced valley splitting, on the order of 10 meV at a magnetic field of 1 T, is about 100 times larger than Zeeman splitting for spin, shedding light on graphene-based valleytronics.
Electron spin and pseudospin degrees of freedom play a critical role in many-body phenomena through exchange interactions, the understanding and control of which enable the construction of states with complex topological orders and exotic excitations. In this work, we demonstrate fine control of the valley isospin in high-quality bilayer graphene devices and its profound impact in realizing fractional quantum Hall effect with different ground state orders. We present evidence for a new even-denominator fractional quantum Hall state in bilayer graphene, its spontaneous valley polarization in the limit of zero valley Zeeman energy, and the breaking of particle-hole symmetry. These observations support the Moore-Read anti-Pfaffian order. Our experiments establish valley isospin in bilayer graphene to be a powerful experimental knob and open the door to engineering non-Abelian states and quantum information processes in a quantum Hall platform.
We reveal a proximity effect between a topological band (Chern) insulator described by a Haldane model and spin-polarized Dirac particles of a graphene layer. Coupling weakly the two systems through a tunneling term in the bulk, the topological Chern insulator induces a gap and an opposite Chern number on the Dirac particles at half-filling resulting in a sign flip of the Berry curvature at one Dirac point. We study different aspects of the bulk-edge correspondence and present protocols to observe the evolution of the Berry curvature as well as two counter-propagating (protected) edge modes with different velocities. In the strong-coupling limit, the energy spectrum shows flat bands. Therefore we build a perturbation theory and address further the bulk-edge correspondence. We also show the occurrence of a topological insulating phase with Chern number one when only the lowest band is filled. We generalize the effect to Haldane bilayer systems with asymmetric Semenoff masses. We propose an alternative definition of the topological invariant on the Bloch sphere.
We study the electronic structures and topological properties of $(M+N)$-layer twisted graphene systems. We consider the generic situation that $N$-layer graphene is placed on top of the other $M$-layer graphene, and is twisted with respect to each other by an angle $theta$. In such twisted multilayer graphene (TMG) systems, we find that there exists two low-energy flat bands for each valley emerging from the interface between the $M$ layers and the $N$ layers. These two low-energy bands in the TMG system possess valley Chern numbers that are dependent on both the number of layers and the stacking chiralities. In particular, when the stacking chiralities of the $M$ layers and $N$ layers are opposite, the total Chern number of the two low-energy bands for each valley equals to $pm(M+N-2)$ (per spin). If the stacking chiralities of the $M$ layers and the $N$ layers are the same, then the total Chern number of the two low-energy bands for each valley is $pm(M-N)$ (per spin). The valley Chern numbers of the low-energy bands are associated with large, valley-contrasting orbital magnetizations, suggesting the possible existence of orbital ferromagnetism and anomalous Hall effect once the valley degeneracy is lifted either externally by a weak magnetic field or internally by Coulomb interaction through spontaneous symmetry breaking.
The quantum anomalous Hall (QAH) effect - a macroscopic manifestation of chiral band topology at zero magnetic field - has only been experimentally realized by magnetic doping of topological insulators (1 - 3) and delicate design of Moire heterostructures (4 - 8). However, the seemingly simple bilayer graphene without magnetic doping or Moire engineering has long been predicted to host competing ordered states with QAH effects (9 - 11). Here, we explore states in bilayer graphene with conductance of 2 e2/h that not only survive down to anomalously small magnetic fields and up to temperatures of 5 K, but also exhibit magnetic hysteresis. Together, the experimental signatures provide compelling evidence for orbital magnetism driven QAH behavior with a Chern number tunable via electric and magnetic fields as well as carrier sign. The observed octet of QAH phases is distinct from previous observations due to its peculiar ferrimagnetic and ferrielectric order that is characterized by quantized anomalous charge, spin, valley, and spin-valley Hall behavior.
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