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Register a new userUltrafast demagnetization of iron induced by optical vs terahertz pulses
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We study ultrafast magnetization quenching of ferromagnetic iron following excitation by an optical vs a terahertz pump pulse. While the optical pump (photon energy of 3.1 eV) induces a strongly nonthermal electron distribution, terahertz excitation (~4 meV) results in a quasi-thermal perturbation of the electron population. The pump-induced spin and electron dynamics are interrogated by the magneto-optic Kerr effect (MOKE). A deconvolution procedure allows us to push the time resolution down to 130 fs, even though the driving terahertz pulse is more than 0.5 ps long. Remarkably, the MOKE signals exhibit an almost identical time evolution for both optical and terahertz pump pulses, despite the three orders of magnitude different number of excited electrons. We are able to quantitatively explain our results using a model based on quasi-elastic spin-flip scattering. It shows that in the small-perturbation limit, the rate of demagnetization of a metallic ferromagnet is proportional to the excess energy of the electrons, independent of the precise shape of their distribution. Our results reveal that the dynamics of ultrafast demagnetization and of the closely related terahertz spin transport do not depend on the pump photon energy.
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The mechanism underlying femtosecond laser pulse induced ultrafast magnetization dynamics remains elusive despite two decades of intense research on this phenomenon. Most experiments focused so far on characterizing magnetization and charge carrier dynamics, while first direct measurements of structural dynamics during ultrafast demagnetization were reported only very recently. We here present our investigation of the infrared laser pulse induced ultrafast demagnetization process in a thin Ni film, which characterizes simultaneously magnetization and structural dynamics. This is achieved by employing femtosecond time resolved X-ray resonant magnetic reflectivity (tr-XRMR) as probe technique. The experimental results reveal unambiguously that the sub-picosecond magnetization quenching is accompanied by strong changes in non-magnetic X-ray reflectivity. These changes vary with reflection angle and changes up to 30$%$ have been observed. Modeling the X-ray reflectivity of the investigated thin film, we can reproduce these changes by a variation of the apparent Ni layer thickness of up to 1$%$. Extending these simulations to larger incidence angles we show that tr-XRMR can be employed to discriminate experimentally between currently discussed models describing the ultrafast demagnetization phenomenon.
Laser-induced terahertz spin transport (TST) and ultrafast demagnetization (UDM) are central but so far disconnected phenomena in femtomagnetism and terahertz spintronics. Here, we use broadband terahertz emission spectroscopy to reliably measure both processes in one setup. We find that the rate of UDM of a single ferromagnetic metal film F has the same time evolution as the flux of TST from F into an adjacent normal-metal layer N. This remarkable agreement shows that UDM and TST are driven by the same force, which is fully determined by the state of the ferromagnet. An analytical model consistently and quantitatively explains our observations. It reveals that both UDM in F and TST in the F|N stack arise from a generalized spin voltage, which is defined for arbitrary, nonthermal electron distributions. We also conclude that contributions due to a possible temperature difference between F and N are minor and that the spin-current amplitude can, in principle, be increased by one order of magnitude. In general, our findings allow one to apply the vast knowledge of UDM to TST, thereby opening up new pathways toward large-amplitude terahertz spin currents and, thus, energy-efficient ultrafast spintronic devices.
The quest to improve density, speed and energy efficiency of magnetic memory storage has led to exploration of new ways of optically manipulating magnetism at the ultrafast time scale, in particular in ferrimagnetic alloys. While all-optical magnetization switching is well-established on the femtosecond timescale, lateral nanoscale confinement and thus potential significant reduction of the size of the magnetic element remains an outstanding challenge. Here we employ resonant electromagnetic energy-funneling plasmon nanoantennas to influence the demagnetization dynamics of a ferrimagnetic TbCo alloy thin film. We demonstrate how Ag nanoring-shaped antennas under resonant optical femtosecond pumping reduce the overall magneto-optical response due to demagnetization in the underlying films up to three times compared to non-resonant illumination. We attribute such substantial reduction to the nanoscale confinement of the demagnetization process. This is qualitatively supported by the electromagnetic simulations that strongly evidence the optical energy-funneling to the nanoscale from the nanoantennas into the ferrimagnetic film. This is the first and defining step for reaching deterministic ultrafast all-optical magnetization switching at the nanoscale in such systems, opening a route to develop nanoscale ultrafast magneto-optics.
Superluminal tunneling of light through a barrier has attracted broad interest in the last several decades. Despite the observation of such phenomena in various systems, it has been under intensive debate whether the transmitted light truly carry the information of the original pulse. Here we report observation of anomalous time response for terahertz electromagnetic pulses passing through thin metal films, with the pulse shape of the transmitted beam faithfully resembling that of the incident beam. A causal theoretical analysis is developed to explain the experiments, though the theory of Special Relativity may confront a challenge in this exceptional circumstance. These findings may facilitate future applications in high-speed optical communication or signal transmission, and may reshape our fundamental understanding about the tunneling of light.
The results of high-field terahertz transmission experiments on n-doped silicon (carrier concentration of $8.7times10^{16}$ cm$^{-3}$) are presented. We use terahertz pulses with electric field strengths up to 3.1 MV cm$^{-1}$ and a pulse duration of 700 fs. Huge transmittance enhancement of $sim$90 times is observed with increasing of the terahertz electric field strengths within the range of 1.5--3.1 MV cm$^{-1}$.
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