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Register a new userTwo-Dimensional Bipolar Magnetic Semiconductor with High Curie Temperature and Electrically Controllable Spin Polarization Realized in Exfoliated Cr(pyrazine)$_2$ Monolayer
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Exploring two-dimensional (2D) magnetic semiconductors with room temperature magnetic ordering and electrically controllable spin polarization is a highly desirable but challenging task for nanospintronics. Here, through first principles calculations, we propose to realize such a material by exfoliating the recently synthesized organometallic layered crystal Li$_{0.7}$[Cr(pyz)$_2$]Cl$_{0.7}$0.25$cdot$(THF) (pyz = pyrazine, THF = tetrahydrofuran) [Science 370, 587 (2020)]. The feasibility of exfoliation is confirmed by the rather low exfoliation energy of 0.27 J/m$^2$, even smaller than that of graphite. In exfoliated Cr(pyz)$_2$ monolayer, each pyrazine ring grabs one electron from the Cr atom to become a radical anion, then a strong $d$-$p$ direct exchange magnetic interaction emerges between Cr cations and pyrazine radicals, resulting in room temperature ferrimagnetism with a Curie temperature of 342 K. Moreover, Cr(pyz)$_2$ monolayer is revealed to be an intrinsic bipolar magnetic semiconductor where electrical doping can induce half-metallic conduction with controllable spin-polarization direction.
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Bimetal transition iodides in two-dimensional scale provide an interesting idea to combine a set of single-transition-metal ferromagnetic semiconductors together. Motivated by structural engineering on bilayer CrI$_3$ to tune its magnetism and works that realize ideal properties by stacking van der Waals transitional metal dichalcogenides in a certain order. Here we stack monolayer VI$_3$ onto monolayer CrI$_3$ with a middle-layer I atoms discarded to construct monolayer V$_2$Cr$_2$I$_9$. Based on this crystal model, the stable and metastable phases are determined among 7 possible phases by first-principles calculations. It is illustrated that both the two phases have Curie temperature $sim$ 6 (4) times higher than monolayer CrI$_3$ and VI$_3$. The reason can be partly attributed to their large magnetic anisotropy energy (the maximum value reaches 412.9 $mu$eV/atom). More importantly, the Curie temperature shows an electric field and strain dependent character and can even surpass room temperature under a moderate strain range. At last, we believe that the bimetal transition iodide V$_2$Cr$_2$I$_9$ monolayer would support potential opportunities for spintronic devices.
Nodal line semimetals in two-dimensional (2-D) materials have attracted intense attention currently. From fundamental physics and spintronic applications points of view, high Curie temperature ferromagnetic (FM) ones with nodal lines robust against spin-orbit coupling (SOC) are significantly in desirable. Here, we propose that FM K2N monolayer is such Weyl nodal line semimetal. We show that K2N monolayer is dynamically stable, and has a FM ground magnetic state with the out-of-plane [001] magnetization. It shows two nodal lines in the low-energy band structures. Both nodal lines are robust against SOC, under the protection of mirror symmetry. We construct an effective Hamiltonian, which can well characterize the nodal lines in the system. Remarkably, the nodal line semimetal proposed here is distinct from the previously studied ones in that K2N monolayer is 2-D d0-type ferromagnet with the magnetism arising from the partially filled N-p orbitals, which can bring special advantages in spintronic applications. Besides, the Curie temperature in K2N monolayer is estimated to be 942K, being significantly higher than previous FM nodal lines materials. We also find that, specific tensile strains can transform the nodal line from type-I to a type-II one, making its nodal line characteristics even more interesting.
We report on the study of the structural, magnetic and transport properties of highly textured MnBi films with the Curie temperature of 628K. In addition to detailed measurements of resistivity and magnetization, we measure transport spin polarization of MnBi by Andreev reflection spectroscopy and perform fully relativistic band structure calculations of MnBi. A spin polarization from 51pm1 to 63pm1% is observed, consistent with the calculations and with an observation of a large magnetoresistance in MnBi contacts. The band structure calculations indicate that, in spite of almost identical densities of states at the Fermi energy, the large disparity in the Fermi velocities leads to high transport spin polarization of MnBi. The correlation between the values of magnetization and spin polarization is discussed.
We report on tunneling magnetoresistance (TMR) experiments that demonstrate the existence of a significant spin polarization in Co-doped (La,Sr)TiO3-d (Co-LSTO), a ferromagnetic diluted magnetic oxide system (DMOS) with high Curie temperature. These TMR experiments have been performed on magnetic tunnel junctions associating Co-LSTO and Co electrodes. Extensive structural analysis of Co-LSTO combining high-resolution transmission electron microscopy and Auger electron spectroscopy excluded the presence of Co clusters in the Co-LSTO layer and thus, the measured ferromagnetism and high spin polarization are intrinsic properties of this DMOS. Our results argue for the DMOS approach with complex oxide materials in spintronics.
We propose two-dimensional (2D) Ising-type ferromagnetic semiconductors TcSiTe3, TcGeSe3, and TcGeTe3 with high Curie temperatures around 200-0500 K. Owing to large spin-orbit couplings, the large magnetocrystalline anisotropy energy (MAE), large anomalous Hall conductivity, and large magneto-optical Kerr effect were discovered in these intriguing 2D materials. By comparing all possible 2D MGeTe3 materials (M = 3d, 4d, 5d transition metals), we found a large orbital moment around 0.5 $mu$B per atom and a large MAE for TcGeTe3. The large orbital moments are revealed to be from the comparable crystal fields and electron correlations in these Tc-based 2D materials. The microscopic mechanism of the high Curie temperature is also addressed. Our findings reveal the unique magnetic behaviors of 2D Tc-based materials and present a family of 2D ferromagnetic semiconductors with large MAE and Kerr rotation angles that would have wide applications in designing spintronic devices.
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