Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userSpectral features of Pb-related color centers in diamond
115
0
0.0
(
0
)
Ask ChatGPT about the research
No Arabic abstract
We report on the systematic characterization of the optical properties of diamond color centers based on Pb impurities. An ensemble photoluminescence analysis of their spectral emission was performed at different excitation wavelengths in the 405-520 nm range and at different temperatures in the 4-300 K range. The series of observed spectral features consist of different emission lines associated with Pb-related defects. Finally, a room-temperature investigation of single-photon emitters under 490.5 nm laser excitation is reported, revealing different spectral signatures with respect to those already reported under 514 nm excitation. This work represents a substantial progress with respect to previous studies on Pb-related color centers, both in the attribution of an articulated series of spectral features and in the understanding of the formation process of this type of defect, thus clarifying the potential of this system for high-impact applications in quantum technologies.
rate research
Read More
Color centers in diamond are very promising candidates among the possible realizations for practical single-photon sources because of their long-time stable emission at room temperature. The popular nitrogen-vacancy center shows single-photon emission, but within a large, phonon-broadened spectrum (~100nm), which strongly limits its applicability for quantum communication. By contrast, Ni-related centers exhibit narrow emission lines at room temperature. We present investigations on single color centers consisting of Ni and Si created by ion implantation into single crystalline IIa diamond. We use systematic variations of ion doses between 10^8/cm^2 and 10^14/cm^2 and energies between 30keV and 1.8MeV. The Ni-related centers show emission in the near infrared spectral range (~770nm to 787nm) with a small line-width (~3nm FWHM). A measurement of the intensity correlation function proves single-photon emission. Saturation measurements yield a rather high saturation count rate of 77.9 kcounts/s. Polarization dependent measurements indicate the presence of two orthogonal dipoles.
Nitrogen vacancy (NV) centers in diamond have distinct promise as solid-state qubits. This is because of their large dipole moment, convenient level structure and very long room-temperature coherence times. In general, a combination of ion irradiation and subsequent annealing is used to create the centers, however for the rigorous demands of quantum computing all processes need to be optimized, and decoherence due to the residual damage caused by the implantation process itself must be mitigated. To that end we have studied photoluminescence (PL) from NV$^-$, NV$^0$ and GR1 centers formed by ion implantation of 2MeV He ions over a wide range of fluences. The sample was annealed at $600^{circ}$C to minimize residual vacancy diffusion, allowing for the concurrent analysis of PL from NV centers and irradiation induced vacancies (GR1). We find non-monotic PL intensities with increasing ion fluence, monotonic increasing PL in NV$^0$/NV$^-$ and GR1/(NV$^0$ + NV$^1$) ratios, and increasing inhomogeneous broadening of the zero-phonon lines with increasing ion fluence. All these results shed important light on the optimal formation conditions for NV qubits. We apply our findings to an off-resonant photonic quantum memory scheme using vibronic sidebands.
Emerging quantum technologies require precise control over quantum systems of increasing complexity. Defects in diamond, particularly the negatively charged nitrogen-vacancy (NV) center, are a promising platform with the potential to enable technologies ranging from ultra-sensitive nanoscale quantum sensors, to quantum repeaters for long distance quantum networks, to simulators of complex dynamical processes in many-body quantum systems, to scalable quantum computers. While these advances are due in large part to the distinct material properties of diamond, the uniqueness of this material also presents difficulties, and there is a growing need for novel materials science techniques for characterization, growth, defect control, and fabrication dedicated to realizing quantum applications with diamond. In this review we identify and discuss the major materials science challenges and opportunities associated with diamond quantum technologies.
We demonstrate that silicon-vacancy (SiV) centers in diamond can be used to efficiently generate coherent optical photons with excellent spectral properties. We show that these features are due to the inversion symmetry associated with SiV centers, and demonstrate generation of indistinguishable single photons from separate emitters in a Hong-Ou-Mandel (HOM) interference experiment.Prospects for realizing efficient quantum network nodes using SiV centers are discussed.
Silicon-vacancy (SiV) centers in diamond are promising systems for quantum information applications due to their bright single photon emission and optically accessible spin states. Furthermore, SiV centers in low-strain diamond are insensitive to pertubations of the dielectric environment, i.e. they show very weak spectral diffusion. This property renders ensembles of SiV centers interesting for sensing applications. We here report on photoluminescence excitation (PLE) spectroscopy on an SiV ensemble in a low strain, CVD-grown high quality diamond layer, where we measure the fine structure with high resolution and obtain the linewidths and splittings of the SiV centers. We investigate the temperature dependence of the width and position of the fine structure peaks. Our measurements reveal linewidths of about 10 GHz as compared to a lifetime limited width on the order of 0.1 GHz. This difference arises from the inhomogeneous broadening of the transitions caused by residual strain. To overcome inhomogeneous broadening we use spectral hole burning spectroscopy which enables us to measure a nearly lifetime limited homogeneous linewidth of 279 MHz. Furthermore, we demonstrate evidence of coherent interaction in the system by driving a $Lambda$-scheme. Additional measurements on single emitters created by ion implantation confirm the homogeneous linewidths seen in the spectral hole burning experiments and relate the ground state splitting to the decoherence rate.
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
