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Register a new userThermal switching in the generation of photo-induced coherent phonon in bismuth
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Atomic motion of a photo-induced coherent phonon of bismuth (Bi) is directly observed with time-resolved x-ray diffraction under a cryogenic temperature. It is found that displacive excitation in a fully symmetric A$_{mathrm{1g}}$ phonon mode is suppressed at a temperature $T = 9$ K. This result implies a switching of the phonon-generation mechanism from displacive to impulsive excitation with decreasing the temperature. It is comprehensibly understandable in a framework of stimulated Raman scattering. The suppression of displacive excitation also indicates that the adiabatic potential surface deviates from a parabolic one, which is assumed to be realized at room temperature. This study points out important aspects of phonon generation in transient phonon-induced quantum phenomena.
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We report the observation of photo-induced plasmon-phonon coupled modes in the group IV-VI semiconductor PbTe using Fourier-transform inelastic X-ray scattering at the Linac Coherent Light Source (LCLS). We measure the near-zone-center dispersion of the heavily screened longitudinal optical (LO) phonon branch as extracted from differential changes in x-ray diffuse scattering intensity following above band gap photoexcitation.
We investigate the temporal evolution of the electronic states at the bismuth (111) surface by means of time and angle resolved photoelectron spectroscopy. The binding energy of bulk-like bands oscillates with the frequency of the $A_{1g}$ phonon mode whereas surface states are insensitive to the coherent displacement of the lattice. A strong dependence of the oscillation amplitude on the electronic wavevector is correctly reproduced by textit{ab initio} calculations of electron-phonon coupling. Besides these oscillations, all the electronic states also display a photoinduced shift towards higher binding energy whose dynamics follows the evolution of the electronic temperature.
Symmetry breaking across phase transitions often causes changes in selection rules and emergence of optical modes which can be detected via spectroscopic techniques or generated coherently in pump-probe experiments. In second-order or weakly first-order transitions, fluctuations of the order parameter are present above the ordering temperature, giving rise to intriguing precursor phenomena, such as critical opalescence. Here, we demonstrate that in magnetite (Fe$_3$O$_4$) light excitation couples to the critical fluctuations of the charge order and coherently generates structural modes of the ordered phase above the critical temperature of the Verwey transition. Our findings are obtained by detecting coherent oscillations of the optical constants through ultrafast broadband spectroscopy and analyzing their dependence on temperature. To unveil the coupling between the structural modes and the electronic excitations, at the origin of the Verwey transition, we combine our results from pump-probe experiments with spontaneous Raman scattering data and theoretical calculations of both the phonon dispersion curves and the optical constants. Our methodology represents an effective tool to study the real-time dynamics of critical fluctuations across phase transitions.
We present a systematical study of thermal Hall effect on a bismuth single crystal by measuring resistivity, Hall coefficient, and thermal conductivity under magnetic field, which shows a large thermal Hall coefficient comparable to the largest one in a semiconductor HgSe. We discuss that this is mainly due to a large mobility and a low thermal conductivity comparing theoretical calculations, which will give a route for controlling heat current in electronic devices.
In ionic Raman scattering, infrared-active phonons mediate a scattering process that results in the creation or destruction of a Raman-active phonon. This mechanism relies on nonlinear interactions between phonons and has in recent years been associated with a variety of emergent lattice-driven phenomena in complex transition-metal oxides, but the underlying mechanism is often obscured by the presence of multiple coupled order parameters in play. Here, we use time-resolved spectroscopy to compare coherent phonons generated by ionic Raman scattering with those created by more conventional electronic Raman scattering on the nonmagnetic and non-strongly-correlated wide band-gap insulator LaAlO$_3$. We find that the oscillatory amplitude of the low-frequency Raman-active $E_g$ mode exhibits a sharp peak when we tune our pump frequency into resonance with the high-frequency infrared-active $E_u$ mode, consistent with first-principles calculations. Our results suggest that ionic Raman scattering can strongly dominate electronic Raman scattering in wide band-gap insulating materials. We also see evidence of competing scattering channels at fluences above 28~mJ/cm$^2$ that alter the measured amplitude of the coherent phonon response.
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