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Register a new userIn situ investigation of conducting interface formation in LaAlO3/SrTiO3 heterostructure
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The high-mobility conducting interface (CI) between LaAlO_{3}(LAO) and SrTiO_{3}(STO) has revealed many fascinating phenomena, including exotic magnetism and superconductivity. But, the formation mechanism of the CI has not been conclusively explained. Here, using in situ angle-resolved photoemission spectroscopy, we elucidated the mechanisms for the CI formation. In as-grown samples, we observed a built-in potential (V_{bi}) proportional to the polar LAO thickness starting from the first unit cell (UC) with CI formation appearing above 3 UCs. However, we found that the V bi is removed by synchrotron ultraviolet (UV)-irradiation; The built-in potential is recovered by oxygen gas (O_{2}(g))-exposure. Furthermore, after UV-irradiation, the CI appears even below 3UC of LAO. Our results demonstrate not only the V_{bi}-driven CI formation in asgrown LAO/STO, but also a new route to control of the interface state by UV lithographic patterning or other surface modification.
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We have found that there is more than one type of conducting carriers generated in LaAlO3/SrTiO3 heterostructures by comparing the sheet carrier density and mobility from optical transmission spectroscopy with those from dc-transport measurements. When multiple types of carriers exist, optical characterization dominantly reflects the contribution from the high-density carriers whereas dc-transport measurements may exaggerate the contribution of the high-mobility carriers even though they are present at low-density. Since the low-temperature mobilities determined by dc-transport in the LaAlO3/SrTiO3 heterostructures are much higher than those extracted by optical method, we attribute the origin of high-mobility transport to the low-density conducting carriers.
Possible ferromagnetism induced in otherwise non-magnetic materials has been motivating intense research in complex oxide heterostructures. Here we show that a confined magnetism is realized at the interface between SrTiO3 and two insulating polar oxides, BiMnO3 and LaAlO3. By using polarization dependent x-ray absorption spectroscopy, we find that in both cases the magnetic order is stabilized by a negative exchange interaction between the electrons transferred to the interface and local magnetic moments. These local magnetic moments are associated to Ti3+ ions at the interface itself for LaAlO3/SrTiO3 and to Mn3+ ions in the overlayer for BiMnO3/SrTiO3. In LaAlO3/SrTiO3 the induced magnetic moments are quenched by annealing in oxygen, suggesting a decisive role of oxygen vacancies in the stabilization of interfacial magnetism.
Here we investigate LaAlO_3-SrTiO_3 heterostructure withdelta-doping of the interface by LaMnO_3 at less than one monolayer. This doping strongly inhibits the formation of mobile electron layer at the interface. This results in giant increase of the resistance and the thermopower of the heterostructure. Several aspects of this phenomena are investigated. A model to calculate the carrier concentration is presented and effect of doping and detailed temperature dependence is analyzed in terms of model parameters and the weak-scattering theory. The large enhancement of thermopower is attributed to the increased spin and orbital entropy originating from the LaMnO_3 mono-layer.
We present low-temperature and high-field magnetotransport data on SrTiO3-LaAlO3 interfaces. The resistance shows hysteresis in magnetic field and a logarithmic relaxation as a function of time. Oscillations in the magnetoresistance are observed, showing a square root periodicity in the applied magnetic field, both in large-area unstructured samples as well as in a structured sample. An explanation in terms of a commensurability condition of edge states in a highly mobile two-dimensional electron gas between substrate step edges is suggested.
The magnetoresistance as a function of temperature and field for atomically flat interfaces between 8 unit cells of LaAlO3 and SrTiO3 is reported. Anomalous anisotropic behavior of the magnetoresistance is observed below 30 K for superconducting samples with carrier concentration of 3.5times10^13 cm^-2 . We associate this behavior to a magnetic order formed at the interface.
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