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Register a new userThe effects of intrinsic local distortions vs. dynamic thermal motions on the stability and band gaps of cubic oxide and halide perovskites
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Corner-shared ABX$_3$ perovskites have long featured prominently in solid-state chemistry and condensed matter physics. Still, the joint understanding of their two main subgroups-halides and oxides-has not been fully developed. Indeed, unlike the case that compounds having a single repeated motif (monomorphous), certain cubic perovskites can manifest a non-thermal distribution of local motifs (polymorphous networks). Such intrinsic deformations can include positional degrees of freedom. Unlike thermal motion, such intrinsic distortions do not time-average to zero. The present study compares electronic structure features of oxide and halide perovskites starting from the intrinsic polymorphous network described by DFT minimization of the internal energy, continuing to finite temperature thermal disorder using AIMD. We find that (i) different oxide vs. halide ABX$_3$ compounds adopt different energy-lowering distortion modes. The DFT calculated pair distribution function (PDF) of SrTiO$_3$ agrees with the recently measured PDF. (ii) In both oxides and halides, such intrinsic distortions lead to bandgap blueshifts with respect to monomorphous structure. (iii) For oxide perovskites, high-temperature AIMD simulations initiated from the polymorphous structures reveal that the thermally-induced distortions can lead to a bandgap redshift. (iv) In contrast, for cubic CsPbI$_3$, both the intrinsic distortions and the thermal distortions contribute in tandem to bandgap blueshift, the former, intrinsic effect being dominant. (v) In the oxide SrTiO$_3$ and CaTiO$_3$ (but not in halide), octahedral tilting leads to the emergence of a distinct $Gamma$-$Gamma$ direct bandgap component as a secondary valley minimum to the well-known indirect R-$Gamma$ gap. Understanding such intrinsic vs. thermal effects on oxide vs. halide perovskites holds the potential for designing target electronic properties.
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The formation of polarons due to the interaction between charge carriers and the crystal lattice has been proposed to have wide-ranging effects on charge carrier dynamics in lead--halide perovskites (LHPs). The hypothesis underlying many of those proposals is that charge carriers are protected from scattering by their incorporation into polarons. We test that hypothesis by deriving expressions for the rates of scattering of polarons by polar-optical and acoustic phonons, and ionised impurities, which we compute for electrons in the LHPs MAPbI$_{3}$ , MAPbBr$_{3}$ and CsPbI$_{3}$. We then use the ensemble Monte Carlo method to compute electron-polaron distribution functions which satisfy a Boltzmann equation incorporating the same three scattering mechanisms. By carrying out analogous calculations for band electrons and comparing their results to those for polarons, we conclude that polaron formation impacts charge-carrier scattering rates and mobilities to a limited degree in LHPs, contrary to claims in the recent literature.
The unprecedented structural flexibility and diversity of inorganic frameworks of layered hybrid halide perovskites (LHHPs) rise up a wide range of useful optoelectronic properties thus predetermining the extraordinary high interest to this family of materials. Nevertheless, the influence of different types of distortions of their inorganic framework on key physical properties such as band gap has not yet been quantitatively identified. We provided a systematic study of the relationships between LHHPs band gaps and six main structural descriptors of inorganic framework, including interlayer distances (dint), in-plane and out-of-plane distortion angles in layers of octahedra ({theta}in,{theta}out), layer shift factor (LSF), axial and equatorial Pb-I bond distances (dax,deq). Using the set on the selected structural distortions we realized the inverse materials design based on multi-step DFT and machine learning approach to search LHHPs with target values of the band gap. The analysis of calculated descriptors band gap dependences for the wide range of generated model structures of (100) single-layered LHHPs results in the following descending order of their importance:dint > {theta}in > dax > LSFmin > {theta}out > deq > LSFmax, and also implies a strong interaction value for some pairs of structural descriptors. Moreover,we found that the structures with completely different distortions of inorganic framework can have similar band gap, as illustrated by a number of both experimental and model structures.
Halide perovskites constitute a chemically-diverse class of crystals with great promise as photovoltaic absorber materials, featuring band gaps between about 1 and 3.5 eV depending on composition. Their diversity calls for a general computational approach to predicting their band gaps. However, such an approach is still lacking. Here, we use density functional theory (DFT) and many-body perturbation theory within the GW approximation to compute the quasiparticle or fundamental band gap of a set of ten representative halide perovskites: CH$_3$NH$_3$PbI$_3$ (MAPbI$_3$), MAPbBr$_3$, CsSnBr$_3$, (MA)$_2$BiTlBr$_6$, Cs$_2$TlAgBr$_6$, Cs$_2$TlAgCl$_6$, Cs$_2$BiAgBr$_6$, Cs$_2$InAgCl$_6$, Cs$_2$SnBr$_6$, and Cs$_2$Au$_2$I$_6$. Comparing with recent measurements, we find that a standard generalized gradient exchange-correlation functional can significantly underestimate the experimental band gaps of these perovskites, particularly in cases with strong spin-orbit coupling (SOC) and highly dispersive band edges, to a degree that varies with composition. We show that these nonsystematic errors are inherited by one-shot G$_0$W$_0$ and eigenvalue self-consistent GW$_0$ calculations, demonstrating that semilocal DFT starting points are insufficient for MAPbI$_3$, MAPbBr$_3$, CsSnBr$_3$, (MA)$_2$BiTlBr$_6$, Cs$_2$TlAgBr$_6$, and Cs$_2$TlAgCl$_6$. On the other hand, we find that DFT with hybrid functionals leads to an improved starting point and GW$_0$ results in better agreement with experiment for these perovskites. Our results suggest that GW$_0$ with hybrid functional-based starting points are promising for predicting band gaps of systems with large SOC and dispersive bands in this technologically important class of semiconducting crystals.
Solar cells based on hybrid perovskites have shown high efficiency while possessing simple processing methods. To gain a fundamental understanding of their properties on an atomic level, we investigate single crystals of CH3NH3PbI3 with a narrow transition (~5 K) near 327 K. Temperature dependent structural measurements reveal a persistent tetragonal structure with smooth changes in the atomic displacement parameters (ADPs) on crossing T*. We show that the ADPs for I ions yield extended flat regions in the potential wells consistent with the measured large thermal expansion parameter. Molecular dynamics simulations reveal that this material exhibits significant high asymmetries in the Pb-I pair distribution functions. We also show that the intrinsically enhanced freedom of motion of the iodine atoms enables large deformations. This flexibility (softness) of the atomic structure results in highly localized atomic relaxation about defects and hence accounts for both the high carrier mobility as well as the structural instability.
Halide perovskites are promising semiconductors for inexpensive, high-performance optoelectronics. Despite a remarkable defect tolerance compared to conventional semiconductors, perovskite thin films still show substantial microscale heterogeneity in key properties such as luminescence efficiency and device performance. This behavior has been attributed to spatial fluctuations in the population of sub-bandgap electronic states that act as trap-mediated non-radiative recombination sites. However, the origin of the variations, trap states and extent of the defect tolerance remains a topic of debate, and a precise understanding is critical to the rational design of defect management strategies. By combining scanning X-ray diffraction beamlines at two different synchrotrons with high-resolution transmission electron microscopy, we reveal levels of heterogeneity on the ten-micrometer scale (super-grains) and even ten-nanometer scale (sub-grain domains). We find that local strain is associated with enhanced defect concentrations, and correlations between the local structure and time-resolved photoluminescence reveal that these strain-related defects are the cause of non-radiative recombination. We reveal a direct connection between defect concentrations and non-radiative losses, as well as complex heterogeneity across multiple length scales, shedding new light on the presence and influence of structural defects in halide perovskites.
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