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Register a new userPhonons and Quantum Criticality Revealed by Temperature Linear Resistivity in Twisted Double Bilayer Graphene
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Twisted double bilayer graphene (TDBG) is an electric-field-tunable moire system, exhibiting electron correlated states and related temperature linear (T-linear) resistivity. The displacement field provides a new knob to in-situ tune the relative strength of electron interactions in TDBG, yielding not only a rich phase diagram but also the ability to investigate each phase individually. Here, we report a study of carrier density (n), displacement field (D) and twist angle dependence of T-linear resistivity in TDBG. For a large twist angle 1.5 degree where correlated insulating states are absent, we observe a T-linear resistivity (order of 10 Ohm per K) over a wide range of carrier density and its slope decreases with increasing of n before reaching the van Hove singularity, in agreement with acoustic phonon scattering model. The slope of T-linear resistivity is non-monotonically dependent on displacement field, with a single peak structure closely connected to single-particle van Hove Singularity (vHS) in TDBG. For an optimal twist angle of ~1.23 degree in the presence of correlated states, the slope of T-linear resistivity is found maximum at the boundary of the correlated halo regime (order of 100 Ohm per K), resulting a M shape displacement field dependence. The observation is beyond the phonon scattering model from single particle picture, and instead it suggests a strange metal behavior. We interpret the observation as a result of symmetry-breaking instability developed at quantum critical points where electron degeneracy changes. Our results demonstrate that TDBG is an ideal system to study the interplay between phonon and quantum criticality, and might help to map out the evolution of the order parameters for the ground states.
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When twisted to angles near 1{deg}, graphene multilayers provide a new window on electron correlation physics by hosting gate-tuneable strongly-correlated states, including insulators, superconductors, and unusual magnets. Here we report the discovery of a new member of the family, density-wave states, in double bilayer graphene twisted to 2.37{deg}. At this angle the moire states retain much of their isolated bilayer character, allowing their bilayer projections to be separately controlled by gates. We use this property to generate an energetic overlap between narrow isolated electron and hole bands with good nesting properties. Our measurements reveal the formation of ordered states with reconstructed Fermi surfaces, consistent with density-wave states, for equal electron and hole densities. These states can be tuned without introducing chemical dopants, thus opening the door to a new class of fundamental studies of density-waves and their interplay with superconductivity and other types of order, a central issue in quantum matter physics.
Topological insulators realized in materials with strong spin-orbit interactions challenged the long-held view that electronic materials are classified as either conductors or insulators. The emergence of controlled, two-dimensional moire patterns has opened new vistas in the topological materials landscape. Here we report on evidence, obtained by combining thermodynamic measurements, local and non-local transport measurements, and theoretical calculations, that robust topologically non-trivial, valley Chern insulators occur at charge neutrality in twisted double-bilayer graphene (TDBG). These time reversal-conserving valley Chern insulators are enabled by valley-number conservation, a symmetry that emerges from the moire pattern. The thermodynamic gap extracted from chemical potential measurements proves that TDBG is a bulk insulator under transverse electric field, while transport measurements confirm the existence of conducting edge states. A Landauer-Buttiker analysis of measurements on multi-terminal samples allows us to quantitatively assess edge state scattering and demonstrate that it does not destroy the edge states, leaving the bulk-boundary correspondence largely intact.
A variety of correlated phases have recently emerged in select twisted van der Waals (vdW) heterostructures owing to their flat electronic dispersions. In particular, heterostructures of twisted double bilayer graphene (tDBG) manifest electric field-tunable correlated insulating (CI) states at all quarter fillings of the conduction band, accompanied by nearby states featuring signatures suggestive of superconductivity. Here, we report electrical transport measurements of tDBG in which we elucidate the fundamental role of spontaneous symmetry breaking within its correlated phase diagram. We observe abrupt resistivity drops upon lowering the temperature in the correlated metallic phases neighboring the CI states, along with associated nonlinear $I$-$V$ characteristics. Despite qualitative similarities to superconductivity, concomitant reversals in the sign of the Hall coefficient instead point to spontaneous symmetry breaking as the origin of the abrupt resistivity drops, while Joule heating appears to underlie the nonlinear transport. Our results suggest that similar mechanisms are likely relevant across a broader class of semiconducting flat band vdW heterostructures.
We describe a tunneling spectroscopy technique in a double bilayer graphene heterostructure where momentum-conserving tunneling between different energy bands serves as an energy filter for the tunneling carriers, and allows a measurement of the quasi-particle state broadening at well defined energies. The broadening increases linearly with the excited state energy with respect to the Fermi level, and is weakly dependent on temperature. In-plane magnetotunneling reveals a high degree of rotational alignment between the graphene bilayers, and an absence of momentum randomizing processes.
We use temperature-dependent resistivity in small-angle twisted double bilayer graphene to measure bandwidths and gaps of the bands. This electron-hole asymmetric system has one set of non-dispersing bands that splits into two flat bands with the electric field - distinct from the twisted bilayer system. With electric field, the gap between two emergent flat bands increases monotonically and bandwidth is tuned from 1 meV to 15 meV. These two flat bands with gap result in a series of thermally induced insulator to metal transitions - we use a model, at charge neutrality, to measure the bandwidth using only transport measurements. Having two flat bands with tunable gap and bandwidth offers an opportunity to probe the emergence of correlations.
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