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Register a new user1D self-healing beams in integrated silicon photonics
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Since the first experimental observation of optical Airy beams, various applications ranging from particle and cell micromanipulation to laser micromachining have exploited their non-diffracting and accelerating properties. The later discovery that Airy beams can self-heal after being blocked by an obstacle further proved their robustness to propagate under scattering and disordered environment. Here, we report the generation of Airy beams on an integrated silicon photonic chip and demonstrate that the on-chip 1D Airy beams preserve the same properties as the 2D beams. The 1D meta-optics used to create the Airy beam has the size of only 3 by 16 microns, at least three orders of magnitude smaller than the conventional optic. The on-chip self-healing beams demonstrated here could potentially enable diffraction-free light routing for on-chip optical networks and high-precision micromanipulation of bio-molecules on an integrated photonic chip.
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Silicon nitride (SiN) waveguides with ultra-low optical loss enable integrated photonic applications including low noise, narrow linewidth lasers, chip-scale nonlinear photonics, and microwave photonics. Lasers are key components to SiN photonic integrated circuits (PICs), but are difficult to fully integrate with low-index SiN waveguides due to their large mismatch with the high-index III-V gain materials. The recent demonstration of multilayer heterogeneous integration provides a practical solution and enabled the first-generation of lasers fully integrated with SiN waveguides. However a laser with high device yield and high output power at telecommunication wavelengths, where photonics applications are clustered, is still missing, hindered by large mode transition loss, nonoptimized cavity design, and a complicated fabrication process. Here, we report high-performance lasers on SiN with tens of milliwatts output through the SiN waveguide and sub-kHz fundamental linewidth, addressing all of the aforementioned issues. We also show Hertz-level linewidth lasers are achievable with the developed integration techniques. These lasers, together with high-$Q$ SiN resonators, mark a milestone towards a fully-integrated low-noise silicon nitride photonics platform. This laser should find potential applications in LIDAR, microwave photonics and coherent optical communications.
We propose a new type of bistable device for silicon photonics, using the self-electro-optic effect within an optical cavity. Since the bistability does not depend on the intrinsic optical nonlinearity of the material, but is instead engineered by means of an optoelectronic feedback, it appears at low optical powers. This bistable device satisfies all the basic criteria required in an optical switch to build a scalable digital optical computing system.
The next frontier in photonics will rely on the synergistic combination of disparate material systems. One unique organic molecule is azobenzene. This molecule can reversibly change conformations when optically excited in the blue (trans-to-cis) or mid-IR (cis-to-trans). Here, we demonstrate SiO2 optical resonators modified with a monolayer of azobenzene-containing 4-(4-diethylaminophenylazo)pyridine (Aazo) with quality factors over 106. Using a pair of lasers, the molecule is reversibly flipped between molecular conformations, inducing resonant wavelength shifts, and multiple switching cycles are demonstrated. The magnitude of the shift scales with the relative surface density of Aazo. The experimental data agrees with theoretical modeling.
Gallium nitride (GaN) as a wide-band gap material has been widely used in solid-state lighting. Thanks to its high nonlinearity and high refractive index contrast, GaN-on-insulator (GaNOI) is also a promising platform for nonlinear optical applications. Despite its intriguing optical proprieties, nonlinear applications of GaN have rarely been studied due to the relatively high optical loss of GaN waveguides (2 dB/cm). In this letter, we report GaNOI microresonator with intrinsic quality factor over 2 million, corresponding to an optical loss of 0.26 dB/cm. Parametric oscillation threshold power as low as 8.8 mW is demonstrated, and the experimentally extracted nonlinear index of GaN at telecom wavelengths is estimated to be n2 = 1.2*10 -18 m2W-1, which is comparable with silicon. Single soliton generation in GaN is implemented by an auxiliary laser pumping scheme, so as to mitigate the high thermorefractive effect in GaN. The large intrinsic nonlinear refractive index, together with its broadband transparency window and high refractive index contrast, make GaNOI a most balanced platform for chip-scale nonlinear applications.
Integrated photonics plays a central role in modern science and technology, enabling experiments from nonlinear science to quantum information, ultraprecise measurements and sensing, and advanced applications like data communication and signal processing. Optical materials with favorable properties are essential for nanofabrication of integrated-photonics devices. Here we describe a material for integrated nonlinear photonics, tantalum pentoxide (Ta$_2$O$_5$, hereafter tantala), which offers low intrinsic material stress, low optical loss, and efficient access to Kerr-nonlinear processes. We utilize >800-nm thick tantala films deposited via ion-beam sputtering on oxidized silicon wafers. The tantala films contain a low residual tensile stress of 38 MPa, and they offer a Kerr index $n_2$=6.2(23)$times10^{-19}$ m$^2$/W, which is approximately a factor of three higher than silicon nitride. We fabricate integrated nonlinear resonators and waveguides without the cracking challenges that are prevalent in stoichiometric silicon nitride. The tantala resonators feature an optical quality factor up to $3.8times10^6$, which enables us to generate ultrabroad-bandwidth Kerr-soliton frequency combs with low threshold power. Moreover, tantala waveguides enable supercontinuum generation across the near-infrared from low-energy, ultrafast seed pulses. Our work introduces a versatile material platform for integrated, low-loss nanophotonics that can be broadly applied and enable heterogeneous integration.
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