No Arabic abstract
Motivated by a recent first principles prediction of an anisotropic cubic Dirac semi-metal in a real material Tl(TeMo)$_3$, we study the behavior of electrons tunneling through a potential barrier in such systems. To clearly investigate effects from different contributions to the Hamiltonian we study the model in various limits. First, in the limit of a very thin material where the linearly dispersive $z$-direction is frozen out at zero momentum and the dispersion in the $x$-$y$ plane is rotationally symmetric. In this limit we find a Klein tunneling reminiscent of what is observed in single layer graphene and linearly dispersive Dirac semi-metals. Second, an increase in thickness of the material leads to the possibility of a non-zero momentum eigenvalue $k_z$ that acts as an effective mass term in the Hamiltonian. We find that these lead to a suppression of Klein tunneling. Third, the inclusion of an anisotropy parameter $lambda eq 1$ leads to a breaking of rotational invariance. Furthermore, we observed that for different values of incident angle $theta$ and anisotropy parameter $lambda$ the Hamiltonian supports different numbers of modes propagating to infinity. We display this effect in form of a diagram that is similar to a phase diagram of a distant detector. Fourth, we consider coexistence of both anisotropy and non-zero $k_z$ but do not find any effect that is unique to the interplay between non-zero momentum $k_z$ and anisotropy parameter $lambda$. Last, we studied the case of a barrier that was placed in the linearly dispersive direction and found Klein tunneling $T-1propto theta^6+mathcal{O}(theta^8)$ that is enhanced when compared to the Klein tunneling in linear Dirac semi-metals or graphene where $T-1propto theta^2+mathcal{O}(theta^4)$.
Compression dramatically changes the transport and localization properties of graphene. This is intimately related to the change of symmetry of the Dirac cone when the particle hopping is different along different directions of the lattice. In particular, for a critical compression, a semi-Dirac cone is formed with massless and massive dispersions along perpendicular directions. Here we show direct evidence of the highly anisotropic transport of polaritons in a honeycomb lattice of coupled micropillars implementing a semi-Dirac cone. If we optically induce a vacancy-like defect in the lattice, we observe an anisotropically localized polariton distribution in a single sublattice, a consequence of the semi-Dirac dispersion. Our work opens up new horizons for the study of transport and localization in lattices with chiral symmetry and exotic Dirac dispersions.
We present a study of Hall transport in semi-Dirac critical phases. The construction is based on a covariant formulation of relativistic systems with spatial anisotropy. Geometric data together with external electromagnetic fields is used to devise an expansion procedure that leads to a low-energy effective action consistent with the discrete $PT$ symmetry that we impose. We use the action to discuss terms contributing to the Hall transport and extract the coefficients. We also discuss the associated scaling symmetry.
The effects of the spin-orbit interaction on the tunneling magnetoresistance of ferromagnet/semiconductor/normal metal tunnel junctions are investigated. Analytical expressions for the tunneling anisotropic magnetoresistance (TAMR) are derived within an approximation in which the dependence of the magnetoresistance on the magnetization orientation in the ferromagnet originates from the interference between Bychkov-Rashba and Dresselhaus spin-orbit couplings that appear at junction interfaces and in the tunneling region. We also investigate the transport properties of ferromagnet/semiconductor/ferromagnet tunnel junctions and show that in such structures the spin-orbit interaction leads not only to the TAMR effect but also to the anisotropy of the conventional tunneling magnetoresistance (TMR). The resulting anisotropic tunneling magnetoresistance (ATMR) depends on the absolute magnetization directions in the ferromagnets. Within the proposed model, depending on the magnetization directions in the ferromagnets, the interplay of Bychkov-Rashba and Dresselhaus spin-orbit couplings produces differences between the rates of transmitted and reflected spins at the ferromagnet/seminconductor interfaces, which results in an anisotropic local density of states at the Fermi surface and in the TAMR and ATMR effects. Model calculations for Fe/GaAs/Fe tunnel junctions are presented. Furthermore, based on rather general symmetry considerations, we deduce the form of the magnetoresistance dependence on the absolute orientations of the magnetizations in the ferromagnets.
Using a simple quantum-mechanical model, we explore a tunneling anisotropic magnetoresistance (TAMR) effect in ferroelectric tunnel junctions (FTJs) with a ferromagnetic electrode and a ferroelectric barrier layer, which spontaneous polarization gives rise to the Rashba and Dresselhaus spin-orbit coupling (SOC). For realistic parameters of the model, we predict sizable TAMR measurable experimentally. For asymmetric FTJs, which electrodes have different work functions, the built-in electric field affects the SOC parameters and leads to TAMR dependent on ferroelectric polarization direction. The SOC change with polarization switching affects tunneling conductance, revealing a new mechanism of tunneling electroresistance (TER). These results demonstrate new functionalities of FTJs which can be explored experimentally and used in electronic devices.
We theoretically investigate quantum transport through single-molecule magnet (SMM) junctions with ferromagnetic and normal-metal leads in the sequential regime. The current obtained by means of the rate-equation gives rise to the tunneling anisotropic magnetoresistance (TAMR), which varies with the angle between the magnetization direction of ferromagnetic lead and the easy axis of SMM. The angular dependence of TAMR can serve as a probe to determine experimentally the easy axis of SMM. Moreover, it is demonstrated that both the magnitude and sign of TAMR are tunable by the bias voltage, suggesting a promising TAMR based spintronic molecule-device.