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Register a new userOveractivated transport in the localized phase of the superconductor-insulator transition
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Beyond a critical disorder, two-dimensional (2D) superconductors become insulating. In this Superconductor-Insulator Transition (SIT), the nature of the insulator is still controversial. Here, we present an extensive experimental study on insulating Nb_{x}Si_{1-x} close to the SIT, as well as corresponding numerical simulations of the electrical conductivity. At low temperatures, we show that electronic transport is activated and dominated by charging energies. The sample thickness variation results in a large spread of activation temperatures, fine-tuned via disorder. We show numerically and experimentally that the localization length varies exponentially with thickness. At the lowest temperatures, overactivated behavior is observed in the vicinity of the SIT and the increase in the activation energy can be attributed to the superconducting gap. We derive a relation between the increase in activation energy and the temperature below which overactivated behavior is observed. This relation is verified by many different quasi-2D systems.
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A ferromagnetic insulator (FI) attached to a conventional superconductor (S) changes drastically the properties of the latter. Specifically, the exchange field at the FI/S interface leads to a splitting of the superconducting density of states. If S is a superconducting film, thinner than the superconducting coherence length, the modification of the density of states occurs over the whole sample. The co-existence of the exchange splitting and superconducting correlations in S/FI structures leads to striking transport phenomena that are of interest for applications in thermoelectricity, superconducting spintronics and radiation sensors. Here we review the most recent progress in understanding the transport properties of FI/S structures by presenting a complete theoretical framework based on the quasiclassical kinetic equations. We discuss the coupling between the electronic degrees of freedom, charge, spin and energy, under non-equilibrium conditions and its manifestation in thermoelectricity and spin-dependent transport.
The superconductor-insulator transition in ultrathin films of amorphous Bi was tuned by changing the film thickness, with and without an applied magnetic field. The first experimentally obtained phase diagram is mapped as a function of thickness and magnetic field in the T=0 limit. A finite size scaling analysis has been carried out to determine the critical exponent product vz, which was found to be 1.2 for the zero field transition, and 1.4 for the finite field transition. Both results are different from the exponents found for the magnetic field tuned transition in the same system, 0.7.
Nucleation processes of mixed-phase states are an intrinsic characteristic of first-order phase transitions, typically related to local symmetry breaking. Direct observation of emerging mixed-phase regions in materials showing a first-order metal-insulator transition (MIT) offers unique opportunities to uncover their driving mechanism. Using photoemission electron microscopy, we image the nanoscale formation and growth of insulating domains across the temperature-driven MIT in NdNiO3 epitaxial thin films. Heteroepitaxy is found to strongly determine the nanoscale nature of the phase transition, inducing preferential formation of striped domains along the terraces of atomically flat stepped surfaces. We show that the distribution of transition temperatures is an intrinsic local property, set by surface morphology and stable across multiple temperature cycles. Our data provides new insights into the MIT of heteroepitaxial nickelates and points to a rich, nanoscale phenomenology in this strongly correlated material.
We uncover an edge geometric phase mechanism to realize the second-order topological insulators and topological superconductors (SCs), and predict realistic materials for the realization. The theory is built on a novel result shown here that the nontrivial pseudospin textures of edge states in a class of two-dimensional (2D) topological insulators give rise to the geometric phases defined on the edge, for which the effective edge mass domain walls are obtained across corners when external magnetic field or superconductivity is considered, and the Dirac or Majorana Kramers corner modes are resulted. Remarkably, with this mechanism we predict the Majorana Kramers corner modes by fabricating 2D topological insulator on only a uniform and conventional $s$-wave SC, in sharp contrast to the previous proposals which applies unconventional SC pairing or SC $pi$-junction. We find that Au/GaAs(111) can be a realistic material candidate for realizing such Majorana Kramers corner modes.
We study spatial structures of anomalously localized states (ALS) in tail regions at the critical point of the Anderson transition in the two-dimensional symplectic class. In order to examine tail structures of ALS, we apply the multifractal analysis only for the tail region of ALS and compare with the whole structure. It is found that the amplitude distribution in the tail region of ALS is multifractal and values of exponents characterizing multifractality are the same with those for typical multifractal wavefunctions in this universality class.
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