No Arabic abstract
Anticipated breakthroughs in solid-state quantum computing will rely on achieving unprecedented control over the wave-like states of electrons in crystalline materials. For example, an international effort to build a quantum computer that is topologically protected from decoherence is focusing on carefully engineering the wave-like states of electrons in hybrid devices that proximatize an elemental superconductor and a semiconductor nanostructure[1-6]. However, more than 90 years after Bloch derived the functional forms of electronic waves in crystals[7](now known as Bloch wavefunction) rapid scattering processes have so far prevented their direct experimental reconstruction, even in bulk materials. In high-order sideband generation (HSG)[8-15], electrons and holes generated in semiconductors by a near-infrared (NIR) laser are accelerated to high kinetic energy by a strong terahertz field, and recollide to emit NIR sidebands before they are scattered. Here we reconstruct the Bloch wavefunctions of two types of holes in gallium arsenide by experimentally measuring sideband polarizations and introducing an elegant theory that ties those polarizations to quantum interference between different recollision pathways. Because HSG can, in principle, be observed from any direct-gap semiconductor or insulator, we expect the method introduced in this Article can be used to reconstruct Bloch wavefunctions in a large class of bulk and nanostructured materials, accelerating the development of topologically-protected quantum computers as well as other important electronic and optical technologies.
Angle-resolved spectroscopy is the most powerful technique to investigate the electronic band structure of crystalline solids. To completely characterize the electronic structure of topological materials, one needs to go beyond band structure mapping and probe the texture of the Bloch wavefunction in momentum-space, associated with Berry curvature and topological invariants. Because phase information is lost in the process of measuring photoemission intensities, retrieving the complex-valued Bloch wavefunction from photoemission data has yet remained elusive. In this Article, we introduce a novel measurement methodology and observable in extreme ultraviolet angle-resolved photoemission spectroscopy, based on continuous modulation of the ionizing radiation polarization axis. By tracking the energy- and momentum-resolved amplitude and phase of the photoemission modulation upon polarization variation, we reconstruct the Bloch wavefunction of prototypical semiconducting transition metal dichalcogenide 2H-WSe$_2$ with minimal theory input. This novel experimental scheme, which is articulated around the manipulation of the photoionization transition dipole matrix element, in combination with a simple tight-binding theory, is general and can be extended to provide insights into the Bloch wavefunction of many relevant crystalline solids.
Bloch wavefunctions in solids form a representation of crystalline symmetries. Recent studies revealed that symmetry representations in band structure can be used to diagnose the topological properties of weakly interacting materials. In this work, we introduce an open-source program qeirreps that computes the representation characters in a band structure based on the output file of Quantum ESPRESSO. Our program also calculates the Z4 index, i.e., the sum of inversion parities at all time-reversal invariant momenta, for materials with inversion symmetry. When combined with the symmetry indicator method, this program can be used to explore new topological materials.
The interaction between electrons and lattice vibrations determines key physical properties of materials, including their electrical and heat transport, excited electron dynamics, phase transitions, and superconductivity. We present a new ab initio method that employs atomic orbital (AO) wavefunctions to compute the electron-phonon (e-ph) interactions in materials and interpolate the e-ph coupling matrix elements to fine Brillouin zone grids. We detail the numerical implementation of such AO-based e-ph calculations, and benchmark them against direct density functional theory calculations and Wannier function (WF) interpolation. The key advantages of AOs over WFs for e-ph calculations are outlined. Since AOs are fixed basis functions associated with the atoms, they circumvent the need to generate a material-specific localized basis set with a trial-and-error approach, as is needed in WFs. Therefore, AOs are ideal to compute e-ph interactions in chemically and structurally complex materials for which WFs are challenging to generate, and are also promising for high-throughput materials discovery. While our results focus on AOs, the formalism we present generalizes e-ph calculations to arbitrary localized basis sets, with WFs recovered as a special case.
We derive an exact formula of orbital susceptibility expressed in terms of Bloch wave functions, starting from the exact one-line formula by Fukuyama in terms of Greens functions. The obtained formula contains four contributions: (1) Landau-Peierls susceptibility, (2) interband contribution, (3) Fermi surface contribution, and (4) contribution from occupied states. Except for the Landau-Peierls susceptibility, the other three contributions involve the crystal-momentum derivatives of Bloch wave functions. Physical meaning of each term is clarified. The present formula is simplified compared with those obtained previously by Hebborn et al. Based on the formula, it is seen first of all that diamagnetism from core electrons and Van Vleck susceptibility are the only contributions in the atomic limit. The band effects are then studied in terms of linear combination of atomic orbital treating overlap integrals between atomic orbitals as a perturbation and the itinerant feature of Bloch electrons in solids are clarified systematically for the first time.
The quantum confinement of Bloch waves is fundamentally different from the well-known quantum confinement of plane waves. Unlike that obtained in the latter are all stationary states only; in the former, there is always a new type of states -- the boundary dependent states. This distinction leads to interesting physics in low-dimensional systems.