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Register a new userOrientation-dependent stabilization of MgCr$_2$O$_4$ spinel thin films
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AB$_2$O$_4$ normal spinels with a magnetic B site can host a variety of magnetic and orbital frustrations leading to spin-liquid phases and field-induced phase transitions. Here we report the first epitaxial growth of (111)-oriented MgCr$_2$O$_4$ thin films. By characterizing the structural and electronic properties of films grown along (001) and (111) directions, the influence of growth orientation has been studied. Despite distinctly different growth modes observed during deposition, the comprehensive characterization reveals no measurable disorder in the cation distribution nor multivalency issue for Cr ions in either orientation. Contrary to a naive expectation, the (111) stabilized films exhibit a smoother surface and a higher degree of crystallinity than (001)-oriented films. The preference in growth orientation is explained within the framework of heteroepitaxial stabilization in connection to a significantly lower (111) surface energy. These findings open broad opportunities in the fabrication of 2D kagome-triangular heterostructures with emergent magnetic behavior inaccessible in bulk crystals.
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We study the exchange constants of MnV$_2$O$_4$ using magnetic force theorem and local spin density approximation of density functional theory supplemented with a correction due to on-site Hubbard interaction U. We obtain the exchanges for three different orbital orderings of the Vanadium atoms of the spinel. We then map the exchange constants to a Heisenberg model with single-ion anisotropy and solve for the spin-wave excitations in the non-collinear, low temperature phase of the spinel. The single-ion anisotropy parameters are obtained from an atomic multiplet exact-diagonalization program, taking into effect the crystal-field splitting and the spin-orbit coupling. We find good agreement between the spin waves of one of our orbital ordered setups with previously reported experimental spin waves as determined by neutron scattering. We can therefore determine the correct orbital order from various proposals that exist in the literature.
We experimentally investigated the magnetic properties of NiCo$_2$O$_4$ epitaxial films known to be conductive oxides with perpendicular magnetic anisotropy (PMA) at room temperature. Both magneto-torque and magnetization measurements at various temperatures provide clear experimental evidence of the spin reorientation transition at which the MA changes from PMA to easy-cone magnetic anisotropy (ECMA) at a certain temperature ($T_{rm{SR}}$). ECMA was commonly observed in films grown by pulsed laser deposition and reactive radio frequency magnetron sputtering, although $T_{mathrm{SR}}$ is dependent on the growth method as well as the conditions. The cone angles measured from the $c$-axis increased successively at $T_{mathrm{SR}}$ and approached a maximum of 45-50 degrees at the lowest measurement temperature of 5 K. Calculation with the cluster model suggests that the Ni$^{3+}$ ions occupying the $T_d$ site could be the origin of the ECMA. Both the magnetic properties and the results of the calculation based on the cluster model indicate that the ECMA is attributable to the cation anti-site distribution of Ni$^{3+}$, which is possibly formed during the growth process of the thin films.
A high-throughput investigation of local epitaxy (called combinatorial substrate epitaxy) was carried out on Ca$_2$MnO$_4$ Ruddlesden-Popper thin films of six thicknesses (from 20 to 400 nm), all deposited on isostructural polycrystalline Sr$_2$TiO$_4$ substrates. Electron backscatter diffraction revealed grain-over-grain local epitaxial growth for all films, resulting in a single orientation relationship ($OR$) for each substrate-film grain pair. Two preferred epitaxial $ORs$ accounted for more than 90 % of all ORs on 300 different microcrystals, based on analyzing 50 grain pairs for each thickness. The unit cell over unit cell $OR$ ([100][001]$_{film}$ $parallel$ [100][001]$_{substrate}$, or $OR1$) accounted for approximately 30 % of each film. The $OR$ that accounted for 60 % of each film ([100][001]$_{film}$ $parallel$ [100][010]$_{substrate}$, or $OR2$) corresponds to a rotation from $OR1$ by 90$^{circ}$ about the a-axis. $OR2$ is strongly favored for substrate orientations in the center of the stereographic triangle, and $OR1$ is observed for orientations very close to (001) or to those near the edge connecting (100) and (110). While $OR1$ should be lower in energy, the majority observation of $OR2$ implies kinetic hindrances decrease the frequency of $OR1$. Persistent grain over grain growth and the absence of variations of the $OR$ frequencies with thickness implies that the growth competition is finished within the first few si{ anometer}, and local epitaxy persists thereafter during growth.
The local epitaxial growth of pulsed laser deposited Ca$_2$MnO$_4$ films on polycrystalline spark plasma sintered Sr$_2$TiO$_4$ substrates was investigated to determine phase formation and preferred epitaxial orientation relationships ($ORs$) for isostructural Ruddlesden-Popper (RP) heteroepitaxy, further developing the high-throughput synthetic approach called Combinatorial Substrate Epitaxy (CSE). Both grazing incidence X-ray diffraction and electron backscatter diffraction (EBSD) patterns of the film and substrate were indexable as single-phase RP-structured compounds. The optimal growth temperature (between 650 $^{circ}$C and 800 $^{circ}$C) was found to be 750 $^{circ}$C using the maximum value of the average image quality (IQ) of the backscattered diffraction patterns. Films grew in a grain-over-grain pattern such that each Ca$_2$MnO$_4$ grain had a single $OR$ with the Sr$_2$TiO$_4$ grain on which it grew. Three primary $ORs$ described 47 out of 49 grain pairs that covered nearly all of RP orientation space. The first $OR$, found for 20 of the 49, was the expected RP unit-cell over RP unit-cell $OR$, expressed as [100][001]$_{film}$||[100][001]$_{sub}$. The other two $ORs$ were essentially rotated from the first by 90$^{circ}$, with one (observed for 17 of 49 pairs) being rotated about the [100] and the other (observed for 10 of 49 pairs) being rotated about the [110] (and not exactly by 90$^{circ}$). These results indicate that only a small number of $ORs$ are needed to describe isostructural RP heteroepitaxy and further demonstrate the potential of CSE in the design and growth of a wide range of complex functional oxides.
Titanium nitride (TiN) is a paradigm of refractory transition metal nitrides with great potential in vast applications. Generally, the plasmonic performance of TiN can be tuned by oxidation, which was thought to be only temperature-, oxygen partial pressure-, and time-dependent. Regarding the role of crystallographic orientation in the oxidation and resultant optical properties of TiN films, little is known thus far. Here we reveal that both the oxidation resistance behavior and the plasmonic performance of epitaxial TiN films follow the order of (001) < (110) < (111). The effects of crystallographic orientation on the lattice constants, optical properties, and oxidation levels of epitaxial TiN films have been systematically studied by combined high-resolution X-ray diffraction, spectroscopic ellipsometry, X-ray absorption spectroscopy, and X-ray photoemission spectroscopy. To further understand the role of crystallographic orientation in the initial oxidation process of TiN films, density-functional-theory calculations are carried out, indicating the energy cost of oxidation is (001) < (110) < (111), consistent with the experiments. The superior endurance of the (111) orientation against mild oxidation can largely alleviate the previously stringent technical requirements for the growth of TiN films with high plasmonic performance. The crystallographic orientation can also offer an effective controlling parameter to design TiN-based plasmonic devices with desired peculiarity, e.g., superior chemical stability against mild oxidation or large optical tunability upon oxidation.
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