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Register a new userInduced superconductivity in the fractional quantum Hall edge
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Topological superconductors represent a phase of matter with nonlocal properties which cannot smoothly change from one phase to another, providing a robustness suitable for quantum computing. Substantial progress has been made towards a qubit based on Majorana modes, non-Abelian anyons of Ising ($Z_2$) topological order whose exchange$-$braiding$-$produces topologically protected logic operations. However, because braiding Ising anyons does not offer a universal quantum gate set, Majorana qubits are computationally limited. This drawback can be overcome by introducing parafermions, a novel generalized set of non-Abelian modes ($Z_n$), an array of which supports universal topological quantum computation. The primary route to synthesize parafermions involves inducing superconductivity in the fractional quantum Hall (fqH) edge. Here we use high-quality graphene-based van der Waals devices with narrow superconducting niobium nitride (NbN) electrodes, in which superconductivity and robust fqH coexist. We find crossed Andreev reflection (CAR) across the superconductor separating two counterpropagating fqH edges which demonstrates their superconducting pairing. Our observed CAR probability of the integer edges is insensitive to magnetic field, temperature, and filling, which provides evidence for spin-orbit coupling inherited from NbN enabling the pairing of the otherwise spin-polarized edges. FqH edges notably exhibit a CAR probability higher than that of integer edges once fully developed. This fqH CAR probability remains nonzero down to our lowest accessible temperature, suggesting superconducting pairing of fractional charges. These results provide a route to realize novel topological superconducting phases with universal braiding statistics in fqH-superconductor hybrid devices based on graphene and NbN.
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Topological insulators are a newly discovered phase of matter characterized by a gapped bulk surrounded by novel conducting boundary states. Since their theoretical discovery, these materials have encouraged intense efforts to study their properties and capabilities. Among the most striking results of this activity are proposals to engineer a new variety of superconductor at the surfaces of topological insulators. These topological superconductors would be capable of supporting localized Majorana fermions, particles whose braiding properties have been proposed as the basis of a fault-tolerant quantum computer. Despite the clear theoretical motivation, a conclusive realization of topological superconductivity remains an outstanding experimental goal. Here we present measurements of superconductivity induced in two-dimensional HgTe/HgCdTe quantum wells, a material which becomes a quantum spin Hall insulator when the well width exceeds d_{C}=6.3 nm. In wells that are 7.5 nm wide, we find that supercurrents are confined to the one-dimensional sample edges as the bulk density is depleted. However, when the well width is decreased to 4.5 nm the edge supercurrents cannot be distinguished from those in the bulk. These results provide evidence for superconductivity induced in the helical edges of the quantum spin Hall effect, a promising step toward the demonstration of one-dimensional topological superconductivity. Our results also provide a direct measurement of the widths of these edge channels, which range from 180 nm to 408 nm.
Protected edge modes are the cornerstone of topological states of matter. The simplest example is provided by the integer quantum Hall state at Landau level filling unity, which should feature a single chiral mode carrying electronic excitations. In the presence of a smooth confining potential it was hitherto believed that this picture may only be partially modified by the appearance of additional counterpropagating integer-charge modes. Here, we demonstrate the breakdown of this paradigm: The system favors the formation of edge modes supporting fractional excitations. This accounts for previous observations, and leads to additional predictions amenable to experimental tests.
We consider the dephasing rate of an electron level in a quantum dot, placed next to a fluctuating edge current in the fractional quantum Hall effect. Using perturbation theory, we show that this rate has an anomalous dependence on the bias voltage applied to the neighboring quantum point contact, which originates from the Luttinger liquid physics which describes the Hall fluid. General expressions are obtained using a screened Coulomb interaction. The dephasing rate is strictly proportional to the zero frequency backscattering current noise, which allows to describe exactly the weak to strong backscattering crossover using the Bethe-Ansatz solution.
We propose ways to create and detect fractionally charged excitations in emph{integer} quantum Hall edge states. The charge fractionalization occurs due to the Coulomb interaction between electrons propagating on different edge channels. The fractional charge of the soliton-like collective excitations can be observed in time resolved or frequency dependent shot noise measurements.
We study electron transport through a multichannel fractional quantum Hall edge in the presence of both interchannel interaction and random tunneling between channels, with emphasis on the role of contacts. The prime example in our discussion is the edge at filling factor 2/3 with two counterpropagating channels. Having established a general framework to describe contacts to a multichannel edge as thermal reservoirs, we particularly focus on the line-junction model for the contacts and investigate incoherent charge transport for an arbitrary strength of interchannel interaction beneath the contacts and, possibly different, outside them. We show that the conductance does not explicitly depend on the interaction strength either in or outside the contact regions (implicitly, it only depends through renormalization of the tunneling rates). Rather, a long line-junction contact is characterized by a single parameter which defines the modes that are at thermal equilibrium with the contact and is determined by the interplay of various types of scattering beneath the contact. This parameter -- playing the role of an effective interaction strength within an idealized model of thermal reservoirs -- is generically nonzero and affects the conductance. We formulate a framework of fractionalization-renormalized tunneling to describe the effect of disorder on transport in the presence of interchannel interaction. Within this framework, we give a detailed discussion of charge equilibration for arbitrarily strong interaction in the bulk of the edge and arbitrary effective interaction characterizing the line-junction contacts.
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