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Register a new userMeasuring local moire lattice heterogeneity of twisted bilayer graphene
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We introduce a new method to continuously map inhomogeneities of a moire lattice and apply it to large-area topographic images we measure on open-device twisted bilayer graphene (TBG). We show that the variation in the twist angle of a TBG device, which is frequently conjectured to be the reason for differences between devices with a supposed similar twist angle, is about 0.08{deg} around the average of 2.02{deg} over areas of several hundred nm, comparable to devices encapsulated between hBN slabs. We distinguish between an effective twist angle and local anisotropy and relate the latter to heterostrain. Our results imply that for our devices, twist angle heterogeneity has a roughly equal effect to the electronic structure as local strain. The method introduced here is applicable to results from different imaging techniques, and on different moire materials.
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Twisted bilayer graphene (tBLG) forms a quasicrystal whose structural and electronic properties depend on the angle of rotation between its layers. Here we present a scanning tunneling microscopy study of gate-tunable tBLG devices supported by atomically-smooth and chemically inert hexagonal boron nitride (BN). The high quality of these tBLG devices allows identification of coexisting moire patterns and moire super-superlattices produced by graphene-graphene and graphene-BN interlayer interactions. Furthermore, we examine additional tBLG spectroscopic features in the local density of states beyond the first van Hove singularity. Our experimental data is explained by a theory of moire bands that incorporates ab initio calculations and confirms the strongly non-perturbative character of tBLG interlayer coupling in the small twist-angle regime.
In twisted bilayer graphene (TBG) a moire pattern forms that introduces a new length scale to the material. At the magic twist angle of 1.1{deg}, this causes a flat band to form, yielding emergent properties such as correlated insulator behavior and superconductivity [1-4]. In general, the moire structure in TBG varies spatially, influencing the local electronic properties [5-9] and hence the outcome of macroscopic charge transport experiments. In particular, to understand the wide variety observed in the phase diagrams and critical temperatures, a more detailed understanding of the local moire variation is needed [10]. Here, we study spatial and temporal variations of the moire pattern in TBG using aberration-corrected Low Energy Electron Microscopy (AC-LEEM) [11,12]. The spatial variation we find is lower than reported previously. At 500{deg}C, we observe thermal fluctuations of the moire lattice, corresponding to collective atomic displacements of less than 70pm on a time scale of seconds [13], homogenizing the sample. Despite previous concerns, no untwisting of the layers is found, even at temperatures as high as 600{deg}C [14,15]. From these observations, we conclude that thermal annealing can be used to decrease the local disorder in TBG samples. Finally, we report the existence of individual edge dislocations in the atomic and moire lattice. These topological defects break translation symmetry and are anticipated to exhibit unique local electronic properties.
The effects of the long range electrostatic interaction in twisted bilayer graphene are described using the Hartree-Fock approximation. The results show a significant dependence of the band widths and shapes on electron filling, and the existence of broken symmetry phases at many densities, either valley/spin polarized, with broken sublattice symmetry, or both.
Twisted bilayer graphene (TBG) aligned with hexagonal boron nitride (h-BN) substrate can exhibit an anomalous Hall effect at 3/4 filling due to the spontaneous valley polarization in valley resolved moire bands with opposite Chern number [Science 367, 900 (2020), Science 365, 605 (2019)]. It was observed that a small DC current is able to switch the valley polarization and reverse the sign of the Hall conductance [Science 367, 900 (2020), Science 365, 605 (2019)]. Here, we discuss the mechanism of the current switching of valley polarization near the transition temperature, where bulk dissipative transport dominates. We show that for a sample with rotational symmetry breaking, a DC current may generate an electron density difference between the two valleys (valley density difference). The current induced valley density difference in turn induces a first order transition in the valley polarization. We emphasize that the inter-valley scattering plays a central role since it is the channel for exchanging electrons between the two valleys. We further estimate the valley density difference in the TBG/h-BN system with a microscopic model, and find a significant enhancement of the effect in the magic angle regime.
Recently twisted bilayer graphene (t-BLG) emerges as a new strongly correlated physical platform near a magic twist angle, which hosts many exciting phenomena such as the Mott-like insulating phases, unconventional superconducting behavior and emergent ferromagnetism. Besides the apparent significance of band flatness, band topology may be another critical element in determining strongly correlated twistronics yet receives much less attention. Here we report compelling evidence for nontrivial noninteracting band topology of t-BLG moire Dirac bands through a systematic nonlocal transport study, in conjunction with an examination rooted in $K$-theory. The moire band topology of t-BLG manifests itself as two pronounced nonlocal responses in the electron and hole superlattice gaps. We further show that the nonlocal responses are robust to the interlayer electric field, twist angle, and edge termination, exhibiting a universal scaling law. While an unusual symmetry of t-BLG trivializes Berry curvature, we elucidate that two $Z_2$ invariants characterize the topology of the moire Dirac bands, validating the topological edge origin of the observed nonlocal responses. Our findings not only provide a new perspective for understanding the emerging strongly correlated phenomena in twisted van der Waals heterostructures, but also suggest a potential strategy to achieve topologically nontrivial metamaterials from topologically trivial quantum materials based on twist engineering.
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