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Register a new userGhost anti-crossings caused by interlayer umklapp hybridization of bands in 2D heterostructures
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In two-dimensional heterostructures, crystalline atomic layers with differing lattice parameters can stack directly one on another. The resultant close proximity of atomic lattices with differing periodicity can lead to new phenomena. For umklapp processes, this opens the possibility for interlayer umklapp scattering, where interactions are mediated by the transfer of momenta to or from the lattice in the neighbouring layer. Using angle-resolved photoemission spectroscopy to study a graphene on InSe heterostructure, we present evidence that interlayer umklapp processes can cause hybridization between bands from neighbouring layers in regions of the Brillouin zone where bands from only one layer are expected, despite no evidence for moir/e-induced replica bands. This phenomenon manifests itself as ghost anti-crossings in the InSe electronic dispersion. Applied to a range of suitable 2DM pairs, this phenomenon of interlayer umklapp hybridization can be used to create strong mixing of their electronic states, giving a new tool for twist-controlled band structure engineering.
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Umklapp processes play a fundamental role as the only intrinsic mechanism that allows electrons to transfer momentum to the crystal lattice and, therefore, provide a finite electrical resistance in pure metals. However, umklapp scattering has proven to be elusive in experiment as it is easily obscured by other dissipation mechanisms. Here we show that electron-electron umklapp scattering dominates the transport properties of graphene-on-boron-nitride superlattices over a wide range of temperatures and carrier densities. The umklapp processes cause giant excess resistivity that rapidly increases with increasing the superlattice period and are responsible for deterioration of the room-temperature mobility by more than an order of magnitude as compared to standard, non-superlattice graphene devices. The umklapp scattering exhibits a quadratic temperature dependence accompanied by a pronounced electron-hole asymmetry with the effect being much stronger for holes rather than electrons. Aside from fundamental interest, our results have direct implications for design of possible electronic devices based on heterostructures featuring superlattices.
Atomically thin layered two dimensional (2D) material has provided a rich library for both fundamental research and device applications. One of the special advantages is that, bandgap engineering and controlled material response can be achieved by stacking different 2D materials. Recently several types of excitonic lasers have been reported based on Transition metal dichalcogenide (TMDC) monolayers, however, the emission is still the intrinsic energy bandgap of the monolayers and lasers harnessing the flexibility of Van der Waals heterostructures have not been demonstrated yet. Here, we report for the first time a room temperature interlayer exciton laser with MoS2/WSe2 heterostructures. The onset of lasing action was identified by a combination of distinct kink in the L-L curve and the noticeable collapse of spectral linewidth. Different from visible emission of intralayer excitons for both MoS2 and WSe2, our interlayer exciton laser works in the infrared range, which is fully compatible with the well-established technologies in silicon photonics. Thanks to the long lifetime of interlayer excitons, the requirement of the cavity quality factor is relaxed by orders of magnitude. The demonstration of room temperature interlayer exciton laser might open new perspectives for the development of coherent light source with tailored optical properties on silicon photonics platform.
Flat bands have band crossing points with other dispersive bands in many systems including the canonical flat band models in the Lieb and kagome lattices. Here we show that some of such band degeneracy points are unavoidable because of the symmetry representation (SR) of the flat band under unitary symmetry. We refer to such a band degeneracy point of flat bands as a SR-enforced band crossing. SR-enforced band crossing is distinct from the conventional band degeneracy protected by symmetry eigenvalues or topological charges in that its protection requires both specific symmetry representation and band flatness of the flat band, simultaneously. Even $n$-fold rotation $C_n$ ($n=2,3,4,6$) symmetry, which cannot protect band degeneracy without additional symmetries due to its abelian nature, can protect SR-enforced band crossings in flat band systems. In two-dimensional flat band systems with $C_n$ symmetry, when the degeneracy of a SR-enforced band crossing is lifted by a $C_n$ symmetry-preserving perturbation, we obtain a nearly flat Chern band. Our theory not only explains the origin of the band crossing points of FBs existing in various models, but also gives a strict no-go theorem for isolated FBs in a given lattice arising from the SR.
The incommensurate 30$^{circ}$ twisted bilayer graphene possesses both relativistic Dirac fermions and quasiperiodicity with 12-fold rotational symmetry arising from the interlayer interaction [Ahn et al., Science textbf{361}, 782 (2018) and Yao et al., Proc. Natl. Acad. Sci. textbf{115}, 6928 (2018)]. Understanding how the interlayer states interact with each other is of vital importance for identifying and subsequently engineering the quasicrystalline order for the applications in future electronics and optoelectronics. Herein, via symmetry and group representation theory we unravel an interlayer hybridization selection rule for $D_{6d}$ bilayer consisting of two $C_{6v}$ monolayers no matter the system size, i.e., only the states from two $C_{6v}$ subsystems with the same irreducible representations are allowed to be hybridized with each other. The hybridization shows two categories including the equivalent and non-equivalent hybridizations with corresponding 12-fold symmetrical and 6-fold symmetrical antibonding (bonding) states, which are respectively generated from $A_1+A_1$, $A_2+A_2$, $E_1+E_1$, and $E_2+E_2$ four paring states and $B_1+B_1$ and $B_2+B_2$ two paring states. With the help of $C_6$ and $sigma_x$ symmetry operators, calculations on the hybridization matrix elements verify the characteristic of the zero non-diagonal and nonzero diagonal patterns required by the hybridization selection rule. In reciprocal space, a vertical electric field breaks the 12-fold symmetry of originally resonant quasicrystalline states and acts as a polarizer allowing the hybridizations from two $E_1$, $E_2$ and $B_2$ paring states but blocking others. Our theoretical framework also paves a way for revealing the interlayer hybridization for bilayer system coupled by the van der Waals interaction.
The use of relative twist angle between adjacent atomic layers in a van der Waals heterostructure, has emerged as a new degree of freedom to tune electronic and optoelectronic properties of devices based on 2D materials. Using ABA-stacked trilayer (TLG) graphene as the model system, we show that, contrary to conventional wisdom, the band structures of 2D materials are systematically tunable depending on their relative alignment angle between hexagonal BN (hBN), even at very large twist angles. Moreover, addition or removal of the hBN substrate results in an inversion of the K and K valley in TLGs lowest Landau level (LL). Our work illustrates the critical role played by substrates in van der Waals heterostructures and opens the door towards band structure modification and valley control via substrate and twist angle engineering.
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