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Magnetism and stability of all primitive stacking patterns in bilayer chromium trihalides

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 Added by Marco Gibertini
 Publication date 2020
  fields Physics
and research's language is English




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Chromium trihalides, CrX$_3$ (with X = Cl, Br, I), are a family of layered magnetic materials that can be easily exfoliated to provide ferromagnetic monolayers. When two layers are stacked together to form a bilayer the interlayer exchange coupling can be either ferromagnetic or antiferromagnetic depending on the stacking sequence. Here we combine crystallographic arguments based on the close-packing condition with first-principles simulations to enumerate all possible stacking patterns in CrX$_3$ bilayers that preserve the spatial periodicity of each layer. We recover all configurations observed in bulk crystals and disclose stacking sequences with no bulk counterpart where the two layers have opposite chirality. Stacking sequences are ranked according to their relative stability and a preferential interlayer magnetic ordering is assigned to each of them. Simulations provide a consistent picture to frame all current experimental observations on bulk and exfoliated CrX$_3$ crystals, with interesting implications for future measurements, including synthetic bilayers with non-standard stacking patterns.



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We conduct a comprehensive study of three different magnetic semiconductors, CrI$_3$, CrBr$_3$, and CrCl$_3$, by incorporating both few- and bi-layer samples in van der Waals tunnel junctions. We find that the interlayer magnetic ordering, exchange gap, magnetic anisotropy, as well as magnon excitations evolve systematically with changing halogen atom. By fitting to a spin wave theory that accounts for nearest neighbor exchange interactions, we are able to further determine a simple spin Hamiltonian describing all three systems. These results extend the 2D magnetism platform to Ising, Heisenberg, and XY spin classes in a single material family. Using magneto-optical measurements, we additionally demonstrate that ferromagnetism can be stabilized down to monolayer in more isotropic CrBr$_3$, with transition temperature still close to that of the bulk.
Diverse interlayer tunability of physical properties of two-dimensional layers mostly lies in the covalent-like quasi-bonding that is significant in electronic structures but rather weak for energetics. Such characteristics result in various stacking orders that are energetically comparable but may significantly differ in terms of electronic structures, e.g. magnetism. Inspired by several recent experiments showing interlayer anti-ferromagnetically coupled CrI3 bilayers, we carried out first-principles calculations for CrI3 bilayers. We found that the anti-ferromagnetic coupling results from a new stacking order with the C2/m space group symmetry, rather than the graphene-like one with R3 as previously believed. Moreover, we demonstrated that the intra- and inter-layer couplings in CrI3 bilayer are governed by two different mechanisms, namely ferromagnetic super-exchange and direct-exchange interactions, which are largely decoupled because of their significant difference in strength at the strong- and weak-interaction limits. This allows the much weaker interlayer magnetic coupling to be more feasibly tuned by stacking orders solely. Given the fact that interlayer magnetic properties can be altered by changing crystal structure with different stacking orders, our work opens a new paradigm for tuning interlayer magnetic properties with the freedom of stacking order in two dimensional layered materials.
Twist engineering, or the alignment of two-dimensional (2D) crystalline layers with desired orientations, has led to tremendous success in modulating the charge degree of freedom in hetero- and homo-structures, in particular, in achieving novel correlated and topological electronic phases in moire electronic crystals. However, although pioneering theoretical efforts have predicted nontrivial magnetism and magnons out of twisting 2D magnets, experimental realization of twist engineering spin degree of freedom remains elusive. Here, we leverage the archetypal 2D Ising magnet chromium triiodide (CrI3) to fabricate twisted double bilayer homostructures with tunable twist angles and demonstrate the successful twist engineering of 2D magnetism in them. Using linear and circular polarization-resolved Raman spectroscopy, we identify magneto-Raman signatures of a new magnetic ground state that is sharply distinct from those in natural bilayer (2L) and four-layer (4L) CrI3. With careful magnetic field and twist angle dependence, we reveal that, for a very small twist angle (~ 0.5 degree), this emergent magnetism can be well-approximated by a weighted linear superposition of those of 2L and 4L CI3 whereas, for a relatively large twist angle (~ 5 degree), it mostly resembles that of isolated 2L CrI3. Remarkably, at an intermediate twist angle (~ 1.1 degree), its magnetism cannot be simply inferred from the 2L and 4L cases, because it lacks sharp spin-flip transitions that are present in 2L and 4L CrI3 and features a dramatic Raman circular dichroism that is absent in natural 2L and 4L ones. Our results demonstrate the possibility of designing and controlling the spin degree of freedom in 2D magnets using twist engineering.
Magnetic skyrmions are nano-scale spin structures that are promising for ultra-dense memory and logic devices. Recent progresses in two-dimensional magnets encourage the idea to realize skyrmionic states in freestanding monolayers. However, monolayers such as CrI3 lack Dzyaloshinskii-Moriya interactions (DMI) and thus do not naturally exhibit skyrmions but rather a ferromagnetic state. Here we propose the fabrication of Cr(I,X)3 Janus monolayers, in which the Cr atoms are covalently bonded to the underlying I ions and top-layer Br or Cl atoms. By performing first-principles calculations and Monte-Carlo simulations, we identify strong enough DMI, which leads to not only helical cycloid phases, but also to intrinsic skyrmionic states in Cr(I,Br)3 and magnetic-field-induced skyrmions in Cr(I,Cl)3.
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