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Register a new userCharacterising the optical response of ultra-low-noise far-infrared 60-110 $mu$m transition edge sensors
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Far-infrared Transition Edge Sensors (TESs) are being developed for the SAFARI grating spectrometer on the cooled-aperture space telescope SPICA. In support of this work, we have devised a cryogenic (90 mK) test facility for carrying out precision optical measurements on ultra-low-noise TESs. Although our facility is suitable for the whole of the SAFARI wavelength range, 34-230 $mu$m, we focus on a representative set of measurements at 60-110 $mu$m using a device having a Noise Equivalent Power (NEP) of 0.32 $mathrm{aW/sqrt{Hz}}$. The system is able to perform a range of measurements: (i) Dark electrical characterisation. (ii) Optical efficiency with respect to a partially coherent beam having a modal composition identical to that of an ideal imaging telescope. (iii) Optical saturation and dynamic range. (iv) Fast optical transient response to a modulated thermal source. (v) Optical transient response in the presence of high-level background loading. We describe dark measurements to determine the operating characteristics of a TES, and then compare predicted optical behaviour with measured optical behaviour. By comparing electrical and optical transient response, we were able to observe thermalisation in the device. We comment on the challenge of eliminating stray light.
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We report initial measurements on our firstMoAu Transition Edge Sensors (TESs). The TESs formed from a bilayer of 40 nm of Mo and 106 nm of Au showed transition temperatures of about 320 mK, higher than identical TESs with a MoCu bilayer which is consistent with a reduced electron transmission coefficient between the bilayer films. We report measurements of thermal conductance in the 200 nm thick silicon nitride SiNx support structures at this temperature, TES dynamic behaviour and current noise measurements.
We show the proof-of-principle detection of light at 1550 nm coupled evanescently from a titanium in-diffused lithium niobate waveguide to a superconducting transition edge sensor. The coupling efficiency strongly depends on the polarization, the overlap between the evanescent field, and the detector structure. We experimentally demonstrate polarization sensitivity of this coupling as well as photon-number resolution of the integrated detector. The combination of transition edge sensors and lithium niobate waveguides can open the field for a variety of new quantum optics experiments.
At Argonne National Laboratory, we are developing hard X-ray (2 to 20 keV) Transition Edge Sensor (TES) arrays for beamline science. The significantly improved energy resolution provided by superconducting detectors compared to semiconductor-based energy-dispersive detectors, but with better collection efficiency than wavelength-dispersive instruments, will enable greatly improved X-ray emission and absorption spectroscopic measurements. A prototype instrument with 24 microwave-frequency multiplexed pixels is now in testing at the Advanced Photon Source (APS) 1-BM beamline. Initial measurements show an energy resolution ten times better (150 eV compared to < 15 eV) than the silicon-drift detectors currently available to APS beamline users, and in particular demonstrate the ability to resolve closely-spaced emission lines in samples containing multiple transition metal elements, such as integrated circuits. Comparing fluorescence spectra of integrated circuits measured with our TESs at the beamline to those measured with silicon detectors, we find emission lines and elements largely hidden (e.g. Hf alongside Cu) from a semiconductor-based detector but well resolved by a TES. This directly shows the strengths of TES-based instruments in fluorescence mapping.
A high temperature superconducting detector was fabricated to capture the thermal images in room temperature background. The detector was made of YBa2Cu3O7-{delta} (YBCO) superconducting thin film deposited on an Yttria Stabilized Zirconia (YSZ) substrate, structurally modified for high responsivity performance. A very thin absorber layer was implemented on the backside of the detector to increase the absorption of the device at infrared (IR) range of frequencies. To capture thermal images, a movable off-axis parabolic mirror on XY plane was used for focusing the incoming IR radiation including the thermal signal of the objects onto the device surface. The captured thermal images belong to the objects within the temperature range between 300K and 400K, which correspond to our imaging optics.
Fondazione Bruno Kessler (FBK, Trento, Italy) has recently delivered its first 50 $mu$m thick production of Ultra-Fast Silicon Detectors (UFSD), based on the Low-Gain Avalanche Diode design. These sensors use high resistivity Si-on-Si substrates, and have a variety of gain layer doping profiles and designs based on Boron, Gallium, Carbonated Boron and Carbonated Gallium to obtain a controlled multiplication mechanism. Such variety of gain layers will allow identifying the most radiation hard technology to be employed in the production of UFSD, to extend their radiation resistance beyond the current limit of $phi sim$ 10$^{15}$ n$_{eq}$/cm$^2$. In this paper, we present the characterisation, the timing performances, and the results on radiation damage tolerance of this new FBK production.
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