Melting and crystallization in layered film system Ge-Bi

The results of studies of melting and crystallization processes in Bi-Ge layered film system are presented. These systems were prepared by subsequent condensation of components in vacuum. It has been shown that the melting temperature in system under study decreases with the decrease of Bi film thickness. The differential technique used for melting temperature registration enables us to measure the value of eutectic temperature $T_epsilon$ = 542 K in the system. The values of supercooling upon crystallization ($Delta T$ = 93 K) and wetting angle ($theta = 68^circ$) have been determined for Bi islands on amorphous Ge substrate.