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Register a new userElectric-field-driven Non-volatile Multi-state Switching of Individual Skyrmions in a Multiferroic Heterostructure
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Electrical manipulation of skyrmions attracts considerable attention for its rich physics and promising applications. To date, such a manipulation is realized mainly via spin-polarized current based on spin-transfer torque or spin-orbital torque effect. However, this scheme is energy-consuming and may produce massive Joule heating. To reduce energy dissipation and risk of heightened temperatures of skyrmion-based devices, an effective solution is to use electric field instead of current as stimulus. Here, we realize an electric-field manipulation of skyrmions in a nanostructured ferromagnetic/ferroelectrical heterostructure at room temperature via an inverse magneto-mechanical effect. Intriguingly, such a manipulation is non-volatile and exhibits a multi-state feature. Numerical simulations indicate that the electric-field manipulation of skyrmions originates from strain-mediated modification of effective magnetic anisotropy and Dzyaloshinskii-Moriya interaction. Our results open a direction for constructing low-energy-dissipation, non-volatile, and multi-state skyrmion-based spintronic devices.
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Magnetic skyrmions are topological spin textures that can be used as information carriers for the next-generation information storage and processing. The electric-field controlling of skyrmions in such devices is essential but remains technologically challenging. Here, using the first-principles calculation and the Ginzburg-Landau theory, we propose a reliable process for writing and deleting skyrmions by electric fields, on the platform of a multiferroic heterostructure, particularly the $text{Cr}_{2}text{Ge}_{2}text{Te}_{6} $/$ text{In}_{2}text{Se}_{3} $ heterostructure. We show that the electric field controls the electric polarization and indirectly influences the antisymmetric Dzyaloshinskii-Moriya interaction (DMI) between the magnetic moments. The latter is responsible for the generation and removal of the skyrmion spin textures, and we study this mechanism by the Ginzburg-Landau analysis. We discuss the real-space Berry curvature, topological Hall effects, possible quantum anomalous Hall effect, and other competing magnetic structures. These results represent examples of quantum technology and may have potential applications in future skyrmionics and the device fabrication.
Planar electrodes patterned on a ferroelectric substrate are shown to provide lateral control of the conductive state of a two-terminal graphene stripe. A multi-level and on-demand memory control of the graphene resistance state is demonstrated under low sub-coercive electric fields, with a susceptibility exceeding by more than two orders of magnitude those reported in a vertical gating geometry. Our example of reversible and low-power lateral control over 11 memory states in the graphene conductivity illustrates the possibility of multimemory and multifunctional applications, as top and bottom inputs remain accessible.
We employ neutron spherical polarimetry to determine the nature and population of the coexisting antiferromagnetic domains in multiferroic YMn2O5. By applying an electric field, we prove that reversing the electrical polarization results in the population inversion of two types of in-plane domains, related to each other by inversion. Our results are completely consistent with the exchange striction mechanism of ferroelectricity, and support a unified model where cycloidal ordering is induced by coupling to the main magnetic order parameter.
Using density functional theory (DFT), we study how the stability of individual magnetic skyrmions in an ultrathin transition-metal film can be controlled via the external electric fields. For applied electric fields of $mathcal{E}$= $pm 0.5$ V/{AA}, we find changes from 8 to 30$%$ of the Heisenberg exchange, the Dzyaloshinskii-Moriya interaction, the magnetocrystalline anisotropy energy, and the higher-order exchange interactions. Based on atomistic spin simulations using the DFT parameters, we find that the energy barriers for electric field assisted skyrmion writing and deleting can vary by up to a factor of three more than the variations of the interactions. This unexpected result originates from the electric field induced shifts of the critical magnetic field, marking the onset of the field-polarized phase, which exhibits metastable skyrmions. The shift leads to an electric field dependent change of the skyrmion radius at a fixed magnetic field and explains the enhanced energy barrier variations.
Electric manipulation of magnetic properties is a key problem of materials research. To fulfil the requirements of modern electronics, these processes must be shifted to high frequencies. In multiferroic materials this may be achieved by electric and magnetic control of their fundamental excitations. Here we identify magnetic vibrations in multiferroic iron-borates which are simultaneously sensitive to external electric and magnetic fields. Nearly 100% modulation of the terahertz radiation in an external field is demonstrated for SmFe3(BO3)4. High sensitivity can be explained by a modification of the spin orientation which controls the excitation conditions in multiferroic borates. These experiments demonstrate the possibility to alter terahertz magnetic properties of materials independently by external electric and magnetic fields.
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