No Arabic abstract
We propose a new 2D semiconductor material (TTA-2D) based on the molecular structure of Thiophene-Tetrathia-Annulene (TTA). The TTA-2D structural, electronic, and optical properties were investigated using textit{ab initio} methods. Our results show that TTA-2D is a small indirect bandgap semiconductor ($0.6$ eV). A semiconductor-metal transition can be induced by applying a uniaxial strain. Our results also show that TTA-2D is thermally stable up to $T=1000$ K. TTA-2D absorbs in a large spectral range, from infrared to ultraviolet regions. Values of refractive index and reflectivity show that TTA-2D reflects only $10%$ of the incident light in the visible region. These results suggest that TTA-2D is a promising material for solar cell applications.
Hexagonal boron nitride is a wide bandgap semiconductor with a very high thermal and chemical stability often used in devices operating under extreme conditions. The growth of high-purity crystals has recently revealed the potential of this material for deep ultraviolet emission, with an intense emission around 215 nm. In the last few years, hexagonal boron nitride has been raising even more attention with the emergence of two-dimensional atomic crystals and Van der Waals heterostructures, initiated with the discovery of graphene. Despite this growing interest and a seemingly simple structure, the basic questions of the bandgap nature and value are still controversial. Here, we resolve this long-debated issue by bringing the evidence for an indirect bandgap at 5.955 eV by means of optical spectroscopy. We demonstrate the existence of phonon-assisted optical transitions, and we measure an exciton binding energy of about 130 meV by two-photon spectroscopy.
Strain engineering is a powerful tool for tuning physical properties of 2D materials, including monolayer transition metal dichalcogenides (TMD) -- direct bandgap semiconductors with strong excitonic response. Here, we demonstrate an approach for local characterization of strain-induced modification of excitonic photoluminescence in TMD-based materials. We reversibly stress a monolayer of MoSe$_2$ with an AFM tip and perform spatio-spectral mapping of the excitonic photoluminescence in the vicinity of the indentation point. To fully reproduce the experimental data, we introduce the linear dependence of the exciton energy and corresponding photoluminescence intensity on the induced strain. Careful account for the optical resolution allows extracting these quantities with good agreement with the previous measurements, which involved macroscopic sample deformation. Our approach is a powerful tool for the study of local optomechanical properties of 2D direct bandgap semiconductors with strong excitonic response.
Because of their loosely bound electrons, electrides offer physical properties useful in chemical synthesis and electronics. For these applications and others, nano-sized electrides offer advantages, but to-date no electride has been synthesized as a nanomaterial. We demonstrate experimentally that Ca$_2$N, a layered electride in which layers of atoms are separated by layers of a 2D electron gas (2DEG), can be exfoliated into two-dimensional (2D) nanosheets using liquid exfoliation. The 2D flakes are stable in a nitrogen atmosphere or in select organic solvents for at least one month. Electron microscopy and elemental analysis reveal that the 2D flakes retain the crystal structure and stoichiometry of the parent 3D Ca$_2$N. In addition, the 2D flakes exhibit metallic character and an optical response that agrees with DFT calculations. Together these findings suggest that the 2DEG is preserved in the 2D material. With this work, we bring electrides into the nano-regime and experimentally demonstrate a 2D electride, Ca$_2$N.
Ultrafast optical control of ferroelectricity using intense terahertz fields has attracted significant interest. Here we show that the nonlinear interactions between two optical phonons in SnTe, a two-dimensional in-plane ferroelectric material, enables a dynamical amplification of the electric polarization within subpicoseconds time domain. Our first principles time dependent simulations show that the infrared-active out-of-plane phonon mode, pumped to nonlinear regimes, spontaneously generates in-plane motions, leading to rectified oscillations in the in-plane electric polarization. We suggest that this dynamical control of ferroelectric material, by nonlinear phonon excitation, can be utilized to achieve ultrafast control of the photovoltaic or other non-linear optical responses.
The recent discovery of two-dimensional (2D) magnets offers unique opportunities for the experimental exploration of low-dimensional magnetism4 and the magnetic proximity effects, and for the development of novel magnetoelectric, magnetooptic and spintronic devices. These advancements call for 2D materials with diverse magnetic structures as well as effective probes for their magnetic symmetries, which is key to understanding intralayer magnetic order and interlayer magnetic coupling. Here we apply second harmonic generation (SHG), a technique acutely sensitive to symmetry breaking, to probe the magnetic structure of a new 2D magnetic semiconductor, CrSBr. We find that CrSBr monolayers are ferromagnetically ordered below 146 K, an observation enabled by the discovery of a giant magnetic dipole SHG effect in the centrosymmetric 2D structure. In multilayers, the ferromagnetic monolayers are coupled antiferromagnetically, with the Neel temperature notably increasing with decreasing layer number. The magnetic structure of CrSBr, comprising spins co-aligned in-plane with rectangular unit cell, differs markedly from the prototypical 2D hexagonal magnets CrI3 and Cr2Ge2Te6 with out-of-plane moments. Moreover, our SHG analysis suggests that the order parameters of the ferromagnetic monolayer and the antiferromagnetic bilayer are the magnetic dipole and the magnetic toroidal moments, respectively. These findings establish CrSBr as an exciting 2D magnetic semiconductor and SHG as a powerful tool to probe 2D magnetic symmetry, opening the door to the exploration of coupling between magnetic order and excitonic/electronic properties, as well as the magnetic toroidal moment, in a broad range of applications.