Do you want to publish a course? Click here

Electrical molecular switch addressed by chemical stimuli

49   0   0.0 ( 0 )
 Added by Dominique Vuillaume
 Publication date 2020
  fields Physics
and research's language is English




Ask ChatGPT about the research

We demonstrate that the conductance switching of benzo-bis(imidazole) molecules upon protonation depends on the lateral functional groups. The protonated H-substituted molecule shows a higher conductance than the neutral one (Gpro>Gneu), while the opposite (Gneu>Gpro) is observed for a molecule laterally functionalized by amino-phenyl groups. These results are demonstrated at various scale lengths : self-assembled monolayer, tiny nanodot-molecule junction and single molecules. From ab-initio theoretical calculations, we conclude that for the H-substituted molecule, the result Gpro>Gneu is correctly explained by a reduction of the LUMO-HOMO gap, while for the amino-phenyl functionnalized molecule, the result Gneu>Gpro is consistent with a shift of HOMO, which reduces the density of states at the Fermi energy.

rate research

Read More

An electron beam is deflected when it passes over a silicon nitride surface, if the surface is illuminated by a low-power continuous-wave diode laser. A deflection angle of up-to $1.2 ,textrm{mrad}$ is achieved for an electron beam of $29 ,mutextrm{rad}$ divergence. A mechanical beam-stop is used to demonstrate that the effect can act as an optical electron switch with a rise and fall time of $6 ,mutextrm{s}$. Such a switch provides an alternative means to control electron beams, which may be useful in electron lithography and microscopy.
Establishing good electrical contacts to nanoscale devices is a major issue for modern technology and contacting 2D materials is no exception to the rule. One-dimensional edge-contacts to graphene were recently shown to outperform surface contacts but the method remains difficult to scale up. We report a resist-free and scalable method to fabricate few graphene layers with electrical contacts in a single growth step. This method derives from the discovery reported here of the growth of few graphene layers on a metallic carbide by thermal annealing of a carbide forming metallic film on SiC in high vacuum. We exploit the combined effect of edge-contact and partially-covalent surface epitaxy between graphene and the metallic carbide to fabricate devices in which low contact-resistance and Josephson effect are observed. Implementing this approach could significantly simplify the realization of large-scale graphene circuits.
Spin waves are excitations in ferromagnetic media that have been proposed as information carriers in hybrid spintronic devices with much lower operation power than conventional charge-based electronics. Their wave nature can be exploited in majority gates by using interference for computation. However, a scalable spin-wave majority gate that can be co-integrated alongside conventional electronics is still lacking. Here, we demonstrate a sub-micron inline spin-wave majority gate with fan-out. Time-resolved imaging of the magnetization dynamics by scanning transmission x-ray microscopy illustrates the device operation. All-electrical spin-wave spectroscopy further demonstrates majority gates with sub-micron dimensions, reconfigurable input and output ports, and frequency-division multiplexing. Challenges for hybrid spintronic computing systems based on spin-wave majority gates are discussed.
In this work, we present an investigation regarding how and why molecular hydrogen changes the electronic properties of graphene field effect transistors. We demonstrate that interaction with H2 leads to local doping of graphene near of the graphene-contact heterojunction. We also show that such interaction is strongly dependent on the characteristics of the metal-graphene interface. By changing the type metal in the contact, we observe that Ohmic contacts can be strongly or weakly electrostatically coupled with graphene. For strongly coupled contacts, the signature of the charge transfer effect promoted by the contacts results on an asymmetric ambipolar conduction, and such asymmetry can be tunable under interaction with H2. On the other hand, for contacts weakly coupled with graphene, the hydrogen interaction has a more profound effect. In such situation, the devices show a second charge neutrality point in graphene transistor transfer curves (a double-peak response) upon H2 exposure. We propose that this double-peak phenomenon arises from the decoupling of the work function of graphene and that of the metallic electrodes induced by the H2 molecules. We also show that the gas-induced modifications at the metal-graphene interface can be exploited to create a controlled graphene p-n junction, with considerable electron transfer to graphene layer and significant variation in the graphene resistance. These effects can pave the way for a suitable metallic contact engineering providing great potential for the application of such devices as gas sensors.
Transistor structures comprising graphene and sub-wavelength metal gratings hold a great promise for plasmon-enhanced terahertz detection. Despite considerable theoretical effort, little experimental evidence for terahertz plasmons in such structures was found so far. Here, we report an experimental study of plasmons in graphene-insulator-grating structures using Fourier transform spectroscopy in 5-10 THz range. The plasmon resonance is clearly visible above the Drude absorption background even in chemical vapor deposited (CVD) graphene with low carrier mobility $sim 10^3$ cm$^2$/(V s). We argue that plasmon lifetime is weakly sensistive to scattering by grain boundaries and macoscopic defects which limits the mobility of CVD samples. Upon placing the grating in close proximity to graphene, the plasmon field becomes tightly bound below the metal stripes, while the resonant frequency is determined by the stripe width but not by grating period. Our results open the prospects of large-area commercially available graphene for resonant terahertz detectors.
comments
Fetching comments Fetching comments
mircosoft-partner

هل ترغب بارسال اشعارات عن اخر التحديثات في شمرا-اكاديميا