X-ray phase contrast topography to measure the surface stress and bulk strain in a silicon crystal

The measurement of the Si lattice parameter by x-ray interferometry assumes the use of strain-free crystals, which might not be true because of intrinsic stresses due to surface relaxation, reconstruction, and oxidation. We used x-ray phase-contrast topography to investigate the strain sensitivity to the finishing, annealing, and coating of the interferometer crystals.We assessed the topography capabilities by measuring the lattice strain due to films of copper deposited on the interferometer mirror-crystal. A byproduct has been the measurement of the surface stresses after complete relaxation of the coatings.