Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userIon beam modification of magnetic tunnel junctions
298
0
0.0
(
0
)
Ask ChatGPT about the research
No Arabic abstract
The impact of 400 keV $Ar^+$ ion irradiation on the magnetic and electrical properties of in-plane magnetized magnetic tunnel junction (MTJ) stacks was investigated by ferromagnetic resonance, vibrating sample magnetometry and current-in-plane tunneling techniques. The irradiation-induced changes of the magnetic anisotropy, coupling energies and tunnel magnetoresistance (TMR) exhibited a correlated dependence on the ion fluence, which allowed us to distinguish between two irradiation regimes. In the low-fluence regime, ${Phi} < 10^{14} cm^{-2}$, the parameters required for having a functioning MTJ were preserved: the anisotropy of the FeCoB free layer (FL) was weakly modulated following a small decrease in the saturation magnetization $M_S$; the TMR decreased continuously; the interlayer exchange coupling (IEC) and the exchange bias (EB) decreased slightly. In the high-fluence regime, ${Phi} > 10^{14} cm^{-2}$, the MTJ was rendered inoperative: the modulation of the FL anisotropy was strong, caused by a strong decrease in $M_S$, ascribed to a high degree of interface intermixing between the FL and the Ta capping; the EB and IEC were also lost, likely due to intermixing of the layers composing the synthetic antiferromagnet; and the TMR vanished due to the irradiation-induced deterioration of the MgO barrier and MgO/FeCoB interfaces. We demonstrate that the layers surrounding the FL play a decisive role in determining the trend of the magnetic anisotropy evolution resulting from the irradiation, and that an ion-fluence window exists where such a modulation of magnetic anisotropy can occur, while not losing the TMR or the magnetic configuration of the MTJ.
rate research
Read More
The magnetic tunnel junction is a cornerstone of spintronic devices and circuits, providing the main way to convert between magnetic and electrical information. In state-of-the-art magnetic tunnel junctions, magnesium oxide is used as the tunnel barrier between magnetic electrodes, providing a uniquely large tunnel magnetoresistance at room temperature. However, the wide bandgap and band alignment of magnesium oxide-iron systems increases the resistance-area product and causes challenges of device-to-device variability and tunnel barrier degradation under high current. Here, we study using first principles narrower-bandgap scandium nitride tunneling properties and transport in magnetic tunnel junctions in comparison to magnesium oxide. These simulations demonstrate a high tunnel magnetoresistance in Fe/ScN/Fe MTJs via {Delta}_1 and {Delta}_2 symmetry filtering with low wavefunction decay rates, allowing a low resistance-area product. The results show that scandium nitride could be a new tunnel barrier material for magnetic tunnel junction devices to overcome variability and current-injection challenges.
We have studied magnetic tunnel junction (MTJ) thin-film stacks using the First Order Reversal Curve (FORC) method. These have very sharp structures in the FORC distribution, unlike most particulate systems or patterned films. These structures are hard to study using conventional FORC analysis programs that require smoothing, because this washes out the structure. We have used a new analysis program (FORC+) that is designed to distinguish fine-scale structure from noise without the use of smoothing, to identify these structures and gain information about the switching mechanism of the stack.
The magnetic stray field is an unavoidable consequence of ferromagnetic devices and sensors leading to a natural asymmetry in magnetic properties. Such asymmetry is particularly undesirable for magnetic random access memory applications where the free layer can exhibit bias. Using atomistic dipole-dipole calculations we numerically simulate the stray magnetic field emanating from the magnetic layers of a magnetic memory device with different geometries. We find that edge effects dominate the overall stray magnetic field in patterned devices and that a conventional synthetic antiferromagnet structure is only partially able to compensate the field at the free layer position. A granular reference layer is seen to provide near-field flux closure while additional patterning defects add significant complexity to the stray field in nanoscale devices. Finally we find that the stray field from a nanoscale antiferromagnet is surprisingly non-zero arising from the imperfect cancellation of magnetic sublattices due to edge defects. Our findings provide an outline of the role of different layer structures and defects in the effective stray magnetic field in nanoscale magnetic random access memory devices and atomistic calculations provide a useful tools to study the stray field effects arising from a wide range of defects.
Using theoretical arguments, we show that, in order to exploit half-metallic ferromagnets in tunneling magnetoresistance (TMR) junctions, it is crucial to eliminate interface states at the Fermi level within the half-metallic gap; contrary to this, no such problem arises in giant magnetoresistance elements. Moreover, based on an a priori understanding of the electronic structure, we propose an antiferromagnetically coupled TMR element, in which interface states are eliminated, as a paradigm of materials design from first principles. Our conclusions are supported by ab-initio calculations.
Thermoelectric effects in magnetic nanostructures and the so-called spin caloritronics are attracting much interest. Indeed it provides a new way to control and manipulate spin currents which are key elements of spin-based electronics. Here we report on giant magnetothermoelectric effect in Al2O3 magnetic tunnel junctions. The thermovoltage in this geometry can reach 1 mV. Moreover a magneto-thermovoltage effect could be measured with ratio similar to the tunnel magnetoresistance ratio. The Seebeck coefficient can then be tuned by changing the relative magnetization orientation of the two magnetic layers in the tunnel junction. Therefore our experiments extend the range of spintronic devices application to thermoelectricity and provide a crucial piece of information for understanding the physics of thermal spin transport.
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
