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Register a new userIon transport and reordering in a two-dimensional trap array
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Scaling quantum information processors is a challenging task, requiring manipulation of a large number of qubits with high fidelity and a high degree of connectivity. For trapped ions, this could be realized in a two-dimensional array of interconnected traps in which ions are separated, transported and recombined to carry out quantum operations on small subsets of ions. Here, we use a junction connecting orthogonal linear segments in a two-dimensional (2D) trap array to reorder a two-ion crystal. The secular motion of the ions experiences low energy gain and the internal qubit levels maintain coherence during the reordering process, therefore demonstrating a promising method for providing all-to-all connectivity in a large-scale, two- or three-dimensional trapped-ion quantum information processor.
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Quantum mechanics dominates various effects in modern research from miniaturizing electronics, up to potentially ruling solid-state physics, quantum chemistry and biology. To study these effects experimental quantum systems may provide the only effective access. Seminal progress has been achieved in a variety of physical platforms, highlighted by recent applications. Atomic ions are known for their unique controllability and are identical by nature, as evidenced, e.g., by performing among the most precise atomic clocks and providing the basis for one-dimensional simulators. However, controllable, scalable systems of more than one dimension are required to address problems of interest and to reach beyond classical numerics with its powerful approximative methods. Here we show, tunable, coherent couplings and interference in a two-dimensional ion microtrap array, completing the toolbox for a reconfigurable quantum simulator. Previously, couplings and entangling interactions between sites in one-dimensional traps have been realized, while coupling remained elusive in microtrap approaches. Our architecture is based on well isolatable ions as identical quantum entities hovering above scalable CMOS chips. In contrast to other multi-dimensional approaches, it allows individual control in arbitrary, even non-periodic, lattice structures. Embedded control structures can exploit the long-range Coulomb interaction to configure synthetic, fully connected many-body systems to address multi-dimensional problems.
Microfabricated ion traps are a major advancement towards scalable quantum computing with trapped ions. The development of more versatile ion-trap designs, in which tailored arrays of ions are positioned in two dimensions above a microfabricated surface, would lead to applications in fields as varied as quantum simulation, metrology and atom-ion interactions. Current surface ion traps often have low trap depths and high heating rates, due to the size of the voltages that can be applied to them, limiting the fidelity of quantum gates. Here we report on a fabrication process that allows for the application of very high voltages to microfabricated devices in general and use this advance to fabricate a 2D ion trap lattice on a microchip. Our microfabricated architecture allows for reliable trapping of 2D ion lattices, long ion lifetimes, rudimentary shuttling between lattice sites and the ability to deterministically introduce defects into the ion lattice.
We present an ion-lattice quantum processor based on a two-dimensional arrangement of linear surface traps. Our design features a tunable coupling between ions in adjacent lattice sites and a configurable ion-lattice connectivity, allowing one, e.g., to realize rectangular and triangular lattices with the same trap chip. We present detailed trap simulations of a simplest-instance ion array with $2times9$ trapping sites and report on the fabrication of a prototype device in an industrial facility. The design and the employed fabrication processes are scalable to larger array sizes. We demonstrate trapping of ions in rectangular and triangular lattices and demonstrate transport of a $2times2$ ion-lattice over one lattice period.
We measure ion heating following transport throughout a Y-junction surface-electrode ion trap. By carefully selecting the trap voltage update rate during adiabatic transport along a trap arm, we observe minimal heating relative to the anomalous heating background. Transport through the junction results in an induced heating between 37 and 150 quanta in the axial direction per traverse. To reliably measure heating in this range, we compare the experimental sideband envelope, including up to fourth-order sidebands, to a theoretical model. The sideband envelope method allows us to cover the intermediate heating range inaccessible to the first-order sideband and Doppler recooling methods. We conclude that quantum information processing in this ion trap will likely require sympathetic cooling in order to support high fidelity gates after junction transport.
We demonstrate a two-dimensional 11-zone ion trap array, where individual laser-cooled atomic ions are stored, separated, shuttled, and swapped. The trap geometry consists of two linear rf ion trap sections that are joined at a 90 degree angle to form a T-shaped structure. We shuttle a single ion around the corners of the T-junction and swap the positions of two crystallized ions using voltage sequences designed to accommodate the nontrivial electrical potential near the junction. Full two-dimensional control of multiple ions demonstrated in this system may be crucial for the realization of scalable ion trap quantum computation and the implementation of quantum networks.
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