No Arabic abstract
In this work we provide an exhaustive study of the photemission spectrum of paramagnetic FeO under pressure using a refined version of our recently derived many-body effective energy theory (MEET). We show that, within a nonmagnetic description of the paramagnetic phase, the MEET gives an overall good description of the photoemission spectrum at ambient pressure as well as the changes it undergoes by increasing pressure. In particular at ambient pressure the band gap opens between the mixed Fe $t_{2g}$ and O $2p$ states and the Fe 4s states and, moreover, a $d$-$d$ gap opens, which is compatible with a high-spin configuration (hence nonzero local magnetic moments as observed in experiment), whereas decreasing pressure the band gap tends to close, $t_{2g}$ states tend to become fully occupied and $e_{g}$ fully unoccupied, which is compatible with a low-spin configuration (hence a collapse of the magnetic moments as observed in experiment). This is a remarkable result, since, within a nonmagnetic description of the paramagnetic phase, the MEET is capable to correctly describe the photoemission spectrum and the spin configuration at ambient as well as high pressure. For comparison we report the band gap values obtained using density-functional theory with a hybrid functional containing screened exchange (HSE06) and a variant of the $GW$ method (self-consistent COHSEX), which are reliable for the description of the antiferromagnetic phase. Both methods open a gap at ambient pressure, although, by construction, they give a low-spin configuration; increasing pressure they correctly describes the band gap closing. We also report the photoemission spectrum of the metallic phase obtained with one-shot fully-dynamical $GW$ on top of LDA, which gives a spectrum very similar to DMFT results from literature.
The simulation of transmission electron microscopy (TEM) images or diffraction patterns is often required to interpret their contrast and extract specimen features. This is especially true for high-resolution phase-contrast imaging of materials, but electron scattering simulations based on atomistic models are widely used in materials science and structural biology. Since electron scattering is dominated by the nuclear cores, the scattering potential is typically described by the widely applied independent atom model. This approximation is fast and fairly accurate, especially for scanning TEM (STEM) annular dark-field contrast, but it completely neglects valence bonding and its effect on the transmitting electrons. However, an emerging trend in electron microscopy is to use new instrumentation and methods to extract the maximum amount of information from each electron. This is evident in the increasing popularity of techniques such as 4D-STEM combined with ptychography in materials science, and cryogenic microcrystal electron diffraction in structural biology, where subtle differences in the scattering potential may be both measurable and contain additional insights. Thus, there is increasing interest in electron scattering simulations based on electrostatic potentials obtained from first principles, mainly via density functional theory, which was previously mainly required for holography. In this Review, we discuss the motivation and basis for these developments, survey the pioneering work that has been published thus far, and give our outlook for the future. We argue that a physically better justified $textit{ab initio}$ description of the scattering potential is both useful and viable for an increasing number of systems, and we expect such simulations to steadily gain in popularity and importance.
Using $textit{ab-initio}$ crystal structure prediction we study the high-pressure phase diagram of $textit{A}BiO_3$ bismuthates ($A$=Ba, Sr, Ca) in a pressure range up to 100$~$GPa. All compounds show a transition from the low-pressure perovskite structure to highly distorted, low-symmetry phases at high pressures (PD transition), and remain charge disproportionated and insulating up to the highest pressure studied. The PD transition at high pressures in bismuthates can be understood as a combined effect of steric arguments and of the strong tendency of bismuth to charge-disproportionation. In fact, distorted structures permit to achieve a very efficient atomic packing, and at the same time, to have Bi-O bonds of different lengths. The shift of the PD transition to higher pressures with increasing cation size within the $textit{A}BiO_3$ series can be explained in terms of chemical pressure.
The experimental valence band photoemission spectrum of semiconductors exhibits multiple satellites that cannot be described by the GW approximation for the self-energy in the framework of many-body perturbation theory. Taking silicon as a prototypical example, we compare experimental high energy photoemission spectra with GW calculations and analyze the origin of the GW failure. We then propose an approximation to the functional differential equation that determines the exact one-body Greens function, whose solution has an exponential form. This yields a calculated spectrum, including cross sections, secondary electrons, and an estimate for extrinsic and interference effects, in excellent agreement with experiment. Our result can be recast as a dynamical vertex correction beyond GW, giving hints for further developments.
We study the Raman spectrum of CrI$_3$, a material that exhibits magnetism in a single-layer. We employ first-principles calculations within density functional theory to determine the effects of polarization, strain, and incident angle on the phonon spectra of the 3D bulk and the single-layer 2D structure, for both the high- and low-temperature crystal structures. Our results are in good agreement with existing experimental measurements and serve as a guide for additional investigations to elucidate the physics of this interesting material.
We have combined the Boltzmann transport equation with an {it ab initio} approach to compute the thermoelectric coefficients of semiconductors. Electron-phonon, ionized impurity, and electron-plasmon scattering rates have been taken into account. The electronic band structure and average intervalley deformation potentials for the electron-phonon coupling are obtained from the density functional theory. The linearized Boltzmann equation has then been solved numerically beyond the relaxation time approximation. Our approach has been applied to crystalline silicon. We present results for the mobility, Seebeck coefficient, and electronic contribution to the thermal conductivity, as a function of the carrier concentration and temperature. The calculated coefficients are in good quantitative agreement with experimental results.