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Register a new userDemonstration of Electric Double Layer Gating under High Pressure by the Development of Field-Effect Diamond Anvil Cell
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We have developed an approach to control the carrier density in various material under high pressure by the combination of an electric double layer transistor (EDLT) with a diamond anvil cell (DAC). In this study, this EDLT-DAC was applied to a Bi thin film, and here we report the field-effect under high pressure in the material. Our EDLT-DAC is a promising device for exploring unknown physical phenomena such as high transition-temperature superconductivity (HTS).
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Hydrostatic pressure applied using diamond anvil cells (DAC) has been widely explored to modulate physical properties of materials by tuning their lattice degree of freedom. Independently, electrical field is able to tune the electronic degree of freedom of functional materials via, for example, the field-effect transistor (FET) configuration. Combining these two orthogonal approaches would allow discovery of new physical properties and phases going beyond the known phase space. Such experiments are, however, technically challenging and have not been demonstrated. Herein, we report a feasible strategy to prepare and measure FETs in a DAC by lithographically patterning the nanodevices onto the diamond culet. Multiple-terminal FETs were fabricated in the DAC using few-layer MoS2 and BN as the channel semiconductor and dielectric layer, respectively. It is found that the mobility, conductance, carrier concentration, and contact conductance of MoS2 can all be significantly enhanced with pressure. We expect that the approach could enable unprecedented ways to explore new phases and properties of materials under coupled mechano-electrostatic modulation.
The structural properties of EuCo2As2 have been studied up to 35 GPa, through the use of x-ray diffraction in a diamond anvil cell at a synchrotron source. At ambient conditions, EuCo2As2 (I4/mmm) has a tetragonal lattice structure with a bulk modulus of 48 +/-4 GPa. With the application of pressure, the a-axis exhibits negative compressibility with a concurrent sharp decrease in c-axis length. The anomalous compressibility of the a-axis continues until 4.7 GPa, at which point the structure undergoes a second-order phase transition to a collapsed tetragonal (CT) state with a bulk modulus of 111 +/- 2 GPa. We found a strong correlation between the ambient pressure volume of 122 parents of superconductors and the corresponding tetragonal to collapsed tetragonal phase transition pressures
Charge-transfer effect under odd-parity crystalline electric field (CEF) is analyzed theoretically. In quantum-critical metal $beta$-YbAlB$_4$, seven-fold configuration of B atoms surrounding Yb atom breaks local inversion symmetry at the Yb site, giving rise to the odd-parity CEF. Analysis of the CEF on the basis of hybridization picture shows that admixture of 4f and 5d wave functions at Yb with pure imaginary coefficient occurs, which makes magnetic-toroidal (MT) and electric-dipole (ED) degrees of freedom active. By constructing the minimal model for periodic crystal $beta$-YbAlB$_4$, we show that the MT as well as ED fluctuation is divergently enhanced at the quantum critical point of valence transition simultaneously with critical valence fluctuations.
We report the high-pressure synthesis of novel superconductor MgB$_2$ and some related compounds. The superconducting transition temperature of our samples of MgB$_2$ is equal to 36.6 K. The MgB$_2$ lattice parameters determined via X-ray diffraction are in excellent agreement with results of our ab initio calculations. The time-differential perturbed angular correlation (TDPAC) experiments demonstrate a small increase in quadrupole frequency of $^111$Cd probe with decreasing temperature from 293 to 4.2 K. The electric field gradient (EFG) at the B site calculated from first principles is in fair agreement with EFG obtained from $^11$B NMR spectra of MgB$_2$ reported in the literature. It is also very close to EFG found in our $^111$Cd TDPAC measurements, which suggests that the $^111$Cd probe substitutes for boron in the MgB$_2$ lattice.
Anisotropic colloidal particles constitute an important class of building blocks for self-assembly directed by electrical fields. The aggregation of these building blocks is driven by induced dipole moments, which arise from an interplay between dielectric effects and the electric double layer. For particles that are anisotropic in shape, charge distribution, and dielectric properties, calculation of the electric double layer requires coupling of the ionic dynamics to a Poisson solver. We apply recently proposed methods to solve this problem for experimentally employed colloids in static and time-dependent electric fields. This allows us to predict the effects of field strength and frequency on the colloidal properties.
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