No Arabic abstract
Based on first-principles method we predict a new low-energy Stone-Wales graphene SW40, which has an orthorhombic lattice with Pbam symmetry and 40 carbon atoms in its crystalline cell forming well-arranged Stone-Wales patterns. The calculated total energy of SW40 is just about 133 meV higher than that of graphene, indicating its excellent stability exceeds all the previously proposed graphene allotropes. We find that SW40 processes intrinsic Type-III Dirac-cone (Phys. Rev. Lett., 120, 237403, 2018) formed by band-crossing of a local linear-band and a local flat-band, which can result in highly anisotropic Fermions in the system. Interestingly, such intrinsic type-III Dirac-cone can be effectively tuned by inner-layer strains and it will be transferred into Type-II and Type-I Dirac-cones under tensile and compressed strains, respectively. Finally, a general tight-binding model was constructed to understand the electronic properties nearby the Fermi-level in SW40. The results show that type-III Dirac-cone feature can be well understood by the $pi$-electron interactions between adjacent Stone-Wales defects.
Magnetic two-dimensional (2D) materials have received tremendous attention recently due to its potential application in spintronics and other magnetism related fields. To our knowledge, five kinds of 2D materials with intrinsic magnetism have been synthesized in experiment. They are CrI3, Cr2Ge2Te6, FePS3, Fe3GeTe2 and VSe2. Apart from the above intrinsic magnetic 2D materials, many strategies have also been proposed to induce magnetism in normal 2D materials such as atomic modification, spin valve and proximity effect. Various devices have also been designed to fulfill the basic functions of spintronics: inducing spin, manipulating spin and detecting spin.
III-V growth and surface conditions strongly influence the physical structure and resulting optical properties of self-assembled quantum dots (QDs). Beyond the design of a desired active optical wavelength, the polarization response of QDs is of particular interest for optical communications and quantum information science. Previous theoretical studies based on a pure InAs QD model failed to reproduce experimentally observed polarization properties. In this work, multi-million atom simulations are performed to understand the correlation between chemical composition and polarization properties of QDs. A systematic analysis of QD structural parameters leads us to propose a two layer composition model, mimicking In segregation and In-Ga intermixing effects. This model, consistent with mostly accepted compositional findings, allows to accurately fit the experimental PL spectra. The detailed study of QD morphology parameters presented here serves as a tool for using growth dynamics to engineer the strain field inside and around the QD structures, allowing tuning of the polarization response.
A two-dimensional carbon allotrope, Stone-Wales graphene, is identified in stochastic group and graph constrained searches and systematically investigated by first-principles calculations. Stone-Wales graphene consists of well-arranged Stone-Wales defects, and it can be constructed through a 90$^circ$ bond-rotation in a $sqrt{8}$$times$$sqrt{8}$ super-cell of graphene. Its calculated energy relative to graphene, +149 meV/atom, makes it more stable than the most competitive previously suggested graphene allotropes. We find that Stone-Wales graphene based on a $sqrt{8}$ super-cell is more stable than those based on $sqrt{9} times sqrt{9}$, $sqrt{12} times sqrt{12}$ and $sqrt{13} times sqrt{13}$ super-cells, and is a magic size that can be further understood through a simple energy splitting and inversion model. The calculated vibrational properties and molecular dynamics of SW-graphene confirm that it is dynamically stable. The electronic structure shows SW-graphene is a semimetal with distorted, strongly anisotropic Dirac cones.
A type of line defect (LD) composed of alternate squares and octagons (4-8) as the basic unit is currently an experimentally available topological defect in graphene lattice, which brings some interesting modification to magnetic and electronic properties of graphene. The transitional metal (TM) adsorb on graphene with line-defect (4-8), and they show interesting and attractive structural, magnetic and electronic properties. For different TMs such as Fe, Co, Mn, Ni and V, the complex systems show different magnetic and electronic properties. The TM atoms can spontaneously adsorb at quadrangular sites, forming an atomic chain along LD on graphene. The most stable configuration is hollow site of regular tangle. The TMs (TM = Co, Fe, Mn, Ni, V) tend to form extended metal lines, showing ferromagnetic (FM) ground state. For Co, Fe, and V atom, the system are half-metal. The spin-{alpha} electron is insulating, while spin-b{eta} electron is conductive. For Mn and Ni atom, Mn-LD and Ni-LD present spin-polarized metal; For Fe atom, the Fe-LD shows semimetal with Dirac cones. For Fe and V atom, both Fe-LD and V-LD show spin-polarized half-metallic properties. And its spin-{alpha} electron is conducting, while spin-b{eta} electron is insulating. Different TMs adsorbing on graphene nanoribbon forming same stable configurations of metal lines, show different electronic properties. The adsorption of TMs introduces magnetism and spin-polarization. These metal lines have potential application in spintronic devices, and work as quasi-one-dimensional metallic wire, which may form building blocks for atomic-scale electrons with well-controlled contacts at atomic level.
We report the isolation of thin flakes of cylindrite, a naturally occurring van der Waals superlattice, by means of mechanical and liquid phase exfoliation. We find that this material is a heavily doped p-type semiconductor with a narrow gap (<0.85 eV) with intrinsic magnetic interactions that are preserved even in the exfoliated nanosheets. Due to its environmental stability and high electrical conductivity, cylindrite can be an interesting alternative to the existing two-dimensional magnetic materials.