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Register a new userUbiquitous impact of localised impurity states on the exchange coupling mechanism in magnetic topological insulators
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Added by
Thiago Ribeiro Fonseca Peixoto
Publication date
2020
fields
Physics
and research's language is
English
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Since the discovery of the quantum anomalous Hall effect in the magnetically doped topological insulators (MTI) Cr:(Bi,Sb)$_2$Te$_3$ and V:(Bi,Sb)$_2$Te$_3$, the search for the exchange coupling mechanisms underlying the onset of ferromagnetism has been a central issue, and a variety of different scenarios have been put forward. By combining resonant photoemission, X-ray magnetic dichroism and multiplet ligand field theory, we determine the local electronic and magnetic configurations of V and Cr impurities in (Bi,Sb)$_2$Te$_3$. While strong pd hybridisation is found for both dopant types, their 3d densities of states show pronounced differences. State-of-the-art first-principles calculations show how these impurity states mediate characteristic short-range pd exchange interactions, whose strength sensitively varies with the position of the 3d states relative to the Fermi level. Measurements on films with varying host stoichiometry support this trend. Our results establish the essential role of impurity-state mediated exchange interactions in the magnetism of MTI.
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The layered MnBi2nTe3n+1 family represents the first intrinsic antiferromagnetic topological insulator (AFM TI, protected by a combination symmetry ) ever discovered, providing an ideal platform to explore novel physics such as quantum anomalous Hall effect at elevated temperature and axion electrodynamics. Recent angle-resolved photoemission spectroscopy (ARPES) experiments on this family have revealed that all terminations exhibit (nearly) gapless topological surface states (TSSs) within the AFM state, violating the definition of the AFM TI, as the surfaces being studied should be -breaking and opening a gap. Here we explain this curious paradox using a surface-bulk band hybridization picture. Combining ARPES and first-principles calculations, we prove that only an apparent gap is opened by hybridization between TSSs and bulk bands. The observed (nearly) gapless features are consistently reproduced by tight-binding simulations where TSSs are coupled to a Rashba-split bulk band. The Dirac-cone-like spectral features are actually of bulk origin, thus not sensitive to the-breaking at the AFM surfaces. This picture explains the (nearly) gapless behaviour found in both Bi2Te3- and MnBi2Te4-terminated surfaces and is applicable to all terminations of MnBi2nTe3n+1 family. Our findings highlight the role of band hybridization, superior to magnetism in this case, in shaping the general surface band structure in magnetic topological materials for the first time.
A topological insulator doped with random magnetic impurities is studied. The system is modelled by the Kane-Mele model with a random spin exchange between conduction electrons and magnetic dopants. The dynamical mean field theory for disordered systems is used to investigate the electron dynamics. The magnetic long-range order and the topological invariant are calculated within the mean field theory. They reveal a rich phase diagram, where different magnetic long-range orders such as antiferromagnetic or ferromagnetic one can exist in the metallic or insulating phases, depending on electron and magnetic impurity fillings. It is found that insulator only occurs at electron half filling, quarter filling and when electron filling is equal to magnetic impurity filling. However, non-trivial topology is observed only in half-filling antiferromagnetic insulator and quarter-filling ferromagnetic insulator. At electron half filling, the spin Hall conductance is quantized and it is robust against magnetic doping, while at electron quarter filling, magnetic dopants drive the ferromagnetic topological insulator to ferromagnetic metal. The quantum anomalous Hall effect is observed only at electron quarter filling and dense magnetic doping.
The surface states of 3D topological insulators can exhibit Fermi surfaces of arbitrary area when the chemical potential is tuned away from the Dirac points. We focus on topological Kondo insulators and show that the surface states can acquire a finite Fermi surface even when the chemical potential is pinned to the Dirac point energy. We illustrate how this can occur when the crystal symmetry is lowered from cubic to tetragonal in a minimal two-orbital model. We label such surface modes as `shadow surface states. We also show that for certain bulk hybridization the Fermi surface of the shadow states can become comparable to the extremal area of the unhybridized bulk bands. The `large Fermi surface of the shadow states is expected to lead to large-frequency quantum oscillations in the presence of an applied magnetic field. Consequently, shadow surface states provide an alternative to mechanisms involving bulk Landau-quantized levels or surface Kondo breakdown for anomalous magnetic quantum oscillations in topological Kondo insulators with tetragonal crystal symmetry.
We show within a local self-consistent mean-field treatment that a random distribution of magnetic adatoms can open a robust gap in the electronic spectrum of graphene. The electronic gap results from the interplay between the nature of the graphene sublattice structure and the exchange interaction between adatoms.The size of the gap depends on the strength of the exchange interaction between carriers and localized spins and can be controlled by both temperature and external magnetic field. Furthermore, we show that an external magnetic field creates an imbalance of spin-up and spin-down carriers at the Fermi level, making doped graphene suitable for spin injection and other spintronic applications.
The recent discovery of magnetic topological insulators has opened new avenues to explore exotic states of matter that can emerge from the interplay between topological electronic states and magnetic degrees of freedom, be it ordered or strongly fluctuating. Motivated by the effects that the dynamics of the magnetic moments can have on the topological surface states, we investigate the magnetic fluctuations across the (MnBi$_{text{2}}$Te$_{text{4}}$)(Bi$_{text{2}}$Te$_{text{3}}$)$_{text{n}}$ family. Our paramagnetic electron spin resonance experiments reveal contrasting Mn spin dynamics in different compounds, which manifests in a strongly anisotropic Mn spin relaxation in MnBi$_{text{2}}$Te$_{text{4}}$ while being almost isotropic in MnBi$_{text{4}}$Te$_{text{7}}$. Our density-functional calculations explain these striking observations in terms of the sensitivity of the local electronic structure to the Mn spin-orientation, and indicate that the anisotropy of the magnetic fluctuations can be controlled by the carrier density, which may directly affect the electronic topological surface states.
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