No Arabic abstract
Developing the field of quantum information science (QIS) hinges upon designing viable qubits, the smallest unit in quantum computing. One approach to creating qubits is introducing paramagnetic defects into semiconductors or insulators. This class of qubits has seen success in the form of nitrogen-vacancy centers in diamond, divacancy defects in SiC, and P doped into Si. These materials feature paramagnetic defects in a low nuclear spin environment to reduce the impact of nuclear spin on electronic spin coherence. In this work, we report single crystal growth of Ba$_2$CaWO$_{6-delta}$, and the coherence properties of controllably introduced W$^{5+}$ spin centers generated by oxygen vacancies. Ba$_2$CaWO$_{6-delta}$ ($delta$ = 0) is a B-site ordered double perovskite with a temperature-dependent octahedral tilting wherein oxygen vacancies generate W$^{5+}$ (d$^1$), $S = frac{1}{2}, I$ = 0, centers. We characterized these defects by measuring the spin-lattice ($T_1$) and spin-spin relaxation ($T_2$) times from T = 5 to 150 K. At T = 5 K, $T_1$ = 310 ms and $T_2$ = 4 $mu$s, establishing the viability of these qubit candidates. With increasing temperature, $T_2$ remains constant up to T = 60 K and then decreases to $T_2$ $approx$ 1 $mu$s at T = 90 K, and remains roughly constant until T = 150 K, demonstrating the remarkable stability of $T_2$ with increasing temperature. Together, these results demonstrate that controlled defect generation in double perovskite structures can generate viable paramagnetic point centers for quantum applications and expand the field of potential materials for QIS.
We present thermodynamic, structural and transport measurements on Ba(Fe0.973Cr0.027)2As2 single crystals. All measurements reveal sharp anomalies at ~ 112 K. Single crystal x-ray diffraction identifies the structural transition as a first order, from the high-temperature tetragonal I4/mmm to the low-temperature orthorhombic Fmmm structure, in contrast to an earlier report.
Angle-dependent magnetoresistance measurements are used to determine the isotropic and anisotropic components of the transport scattering rate in overdoped Tl$_2$Ba$_2$CuO$_{6+delta}$ for a range of $T_c$ values between 15K and 35K. The size of the anisotropic scattering term is found to scale linearly with $T_c$, establishing a link between the superconducting and normal state physics. Comparison with results from angle resolved photoemission spectroscopy indicates that the transport and quasiparticle lifetimes are distinct.
This article describes new polar angle-dependent magnetoresistance (ADMR) measurements in the overdoped cuprate Tl$_2$Ba$_2$CuO$_{6+delta}$ over an expanded range of temperatures and azimuthal angles. These detailed measurements re-affirm the analysis of earlier data taken over a more restricted temperature range and at a single azimuthal orientation, in particular the delineation of the intraplane scattering rate into isotropic and anisotropic components. These new measurements also reveal additional features in the temperature and momentum dependence of the scattering rate, including anisotropy in the $T^2$ component and the preservation of both the $T$-linear and $T^2$ components up to 100 K. The resultant form of the scattering rate places firm constraints on the development of any forthcoming theoretical framework for the normal state charge response of high temperature superconducting cuprates.
A comprehensive bulk and surface investigation of high-quality In$_2$O$_3$(001) single crystals is reported. The transparent-yellow, cube-shaped single crystals were grown using the flux method. Inductively coupled plasma mass spectrometry (ICP-MS) reveals small residues of Pb, Mg, and Pt in the crystals. Four-point-probe measurements show a resistivity of 2.0 $pm$ 0.5 $times$ 10$^5$ {Omega} cm, which translates into a carrier concentration of $approx$10$^{12}$ cm$^{-3}$. The results from x-ray diffraction (XRD) measurements revise the lattice constant to 10.1150(5) {AA} from the previously accepted value of 10.117 {AA}. Scanning tunneling microscopy (STM) images of a reduced (sputtered/annealed) and oxidized (exposure to atomic oxygen at 300 {deg}C) surface show a step height of 5 {AA}, which indicates a preference for one type of surface termination. The surfaces stay flat without any evidence for macroscopic faceting under any of these preparation conditions. A combination of low-energy ion scattering (LEIS) and atomically resolved STM indicates an indium-terminated surface with small islands of 2.5 {AA} height under reducing conditions, with a surface structure corresponding to a strongly distorted indium lattice. Scanning tunneling spectroscopy (STS) reveals a pronounced surface state at the Fermi level ($E_F$). Photoelectron spectroscopy (PES) shows additional, deep-lying band gap states, which can be removed by exposure of the surface to atomic oxygen. Oxidation also results in a shoulder at the O 1s core level at a higher binding energy, possibly indicative of a surface peroxide species. A downward band bending of 0.4 eV is observed for the reduced surface, while the band bending of the oxidized surface is of the order of 0.1 eV or less.
Bi$_2$O$_2$Se is a promising material for next-generation semiconducting electronics. It exhibits premature metallicity on the introduction of a tiny amount of electrons, the physics behind which remains elusive. Here we report on transport and dielectric measurements in Bi$_2$O$_2$Se single crystals at various carrier densities. The temperature-dependent resistivity ($rho$) indicates a smooth evolution from the semiconducting to the metallic state. The critical concentration for the metal-insulator transition (MIT) to occur is extraordinarily low ($n_textrm{c}sim10^{16}$ cm$^{-3}$). The relative permittivity of the insulating sample is huge ($epsilon_textrm{r}approx155(10)$) and varies slowly with temperature. Combined with the light effective mass, a long effective Bohr radius ($a_textrm{B}^*approx36(2)$ $textrm{nm}$) is derived, which provides a reasonable interpretation of the metallic prematurity according to Motts criterion for MITs. The high electron mobility ($mu$) at low temperatures may result from the screening of ionized scattering centers due to the huge $epsilon_textrm{r}$. Our findings shed light on the electron dynamics in two dimensional (2D) Bi$_2$O$_2$Se devices.