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Register a new userDefining the Topological Influencers and Predictive Principles to Engineer Band Structure of Halide Perovskites
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Birabar Ranjit Nanda
Publication date
2019
fields
Physics
and research's language is
English
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Complex quantum coupling phenomena of halide perovskites are examined through ab-initio calculations and exact diagonalization of model Hamiltonians to formulate a set of fundamental guiding rules to engineer the bandgap through strain. The bandgap tuning in halides is crucial for photovoltaic applications and for establishing non-trivial electronic states. Using CsSnI$_3$ as the prototype material, we show that in the cubic phase, the bandgap reduces irrespective of the nature of strain. However, for the tetragonal phase, it reduces with tensile strain and increases with compressive strain, while the reverse is the case for the orthorhombic phase. The reduction can give rise to negative bandgap in the cubic and tetragonal phases leading to normal to topological insulator phase transition. Also, these halides tend to form a stability plateau in a space spanned by strain and octahedral rotation. In this plateau, with negligible cost to the total energy, the bandgap can be varied in a range of 1eV. Furthermore, we present a descriptor model for the perovskite to simulate their bandgap with strain and rotation. Analysis of band topology through model Hamiltonians led to the conceptualization of topological influencers that provide a quantitative measure of the contribution of each chemical bonding towards establishing a normal or topological insulator phase. On the technical aspect, we show that a four orbital based basis set (Sn-${s,p}$ for CsSnI$_3$) is sufficient to construct the model Hamiltonian which can explain the electronic structure of each polymorph of halide perovskites.
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Halide perovskites constitute a chemically-diverse class of crystals with great promise as photovoltaic absorber materials, featuring band gaps between about 1 and 3.5 eV depending on composition. Their diversity calls for a general computational approach to predicting their band gaps. However, such an approach is still lacking. Here, we use density functional theory (DFT) and many-body perturbation theory within the GW approximation to compute the quasiparticle or fundamental band gap of a set of ten representative halide perovskites: CH$_3$NH$_3$PbI$_3$ (MAPbI$_3$), MAPbBr$_3$, CsSnBr$_3$, (MA)$_2$BiTlBr$_6$, Cs$_2$TlAgBr$_6$, Cs$_2$TlAgCl$_6$, Cs$_2$BiAgBr$_6$, Cs$_2$InAgCl$_6$, Cs$_2$SnBr$_6$, and Cs$_2$Au$_2$I$_6$. Comparing with recent measurements, we find that a standard generalized gradient exchange-correlation functional can significantly underestimate the experimental band gaps of these perovskites, particularly in cases with strong spin-orbit coupling (SOC) and highly dispersive band edges, to a degree that varies with composition. We show that these nonsystematic errors are inherited by one-shot G$_0$W$_0$ and eigenvalue self-consistent GW$_0$ calculations, demonstrating that semilocal DFT starting points are insufficient for MAPbI$_3$, MAPbBr$_3$, CsSnBr$_3$, (MA)$_2$BiTlBr$_6$, Cs$_2$TlAgBr$_6$, and Cs$_2$TlAgCl$_6$. On the other hand, we find that DFT with hybrid functionals leads to an improved starting point and GW$_0$ results in better agreement with experiment for these perovskites. Our results suggest that GW$_0$ with hybrid functional-based starting points are promising for predicting band gaps of systems with large SOC and dispersive bands in this technologically important class of semiconducting crystals.
We present an ab initio simulation of $90^{circ}$ ferroelastic twins that were recently observed in methyl ammonium lead iodide. There are two inequivalent types of $90^{circ}$ walls that we calculate to act as either electron or hole sinks which suggests a possible route to enhancing charge carrier separation in photovoltaic devices. Despite separating non-polar domains, we show these walls to have a substantial in-plane polarisation of $sim 6 phantom{|} mu text{C}phantom{|}text{cm}^{-2}$, due in part to flexoelectricity. We suggest this in turn could allow for the photoferroic effect and create efficient pathways for photocurrents within the wall.
We report the understanding of the electronic band structure of $Cs_4CuSb_2Cl_{12}$ perovskite through first-principles density-functional theory calculations. We find that the most stable state has the antiferromagnetic configuration where each $[CuCl_6]$ octahedral chain along the [010] direction is antiferromagnetic. The reasonable band structure of the compound can be obtained only if both the correct magnetic order and the improved exchange interaction of the Cu $it{d}$ electrons are taken into account.
Metal halide perovskites (MHPs) are nowadays one of the most studied semiconductors due to their exceptional performance as active layers in solar cells. Although MHPs are excellent solid-state semiconductors, they are also ionic compounds, where ion migration plays a decisive role in their formation, their photovoltaic performance and their long-term stability. Given the above-mentioned complexity, molecular dynamics simulations based on classical force fields are especially suited to study MHP properties, such as lattice dynamics and ion migration. In particular, the possibility to model mixed compositions is important since they are the most relevant to optimize the optical band gap and the stability. With this intention, we employ DFT calculations and a genetic algorithm to develop a fully transferable classical force field valid for the benchmark inorganic perovskite compositional set CsPb(Br_xI_(1-x))_3 (x = 0,1/3,2/3,1). The resulting force field reproduces correctly, with a common set of parameters valid for all compositions, the experimental lattice parameter as a function of bromide/iodide ratio, the ion-ion distances and the XRD spectra of the pure and mixed structures. The simulated thermal conductivities and ion migration activation energies of the pure compounds are also in good agreement with experimental trends. Our molecular dynamics simulations make it possible to predict the compositional dependence of the ionic diffusion coefficient on bromide/iodide ratio and vacancy concentration. For vacancy concentrations of around 9 10^21 cm^-3, we obtained ionic diffusion coefficients at ambient temperature of 10^-11 and 10^-13 cm2/s for CsPbBr3 and CsPbI3, respectively. Interestingly, in comparison with the pure compounds, we predict a significantly lower activation energy for vacancy migration and faster diffusion for the mixed perovskites.
The unprecedented structural flexibility and diversity of inorganic frameworks of layered hybrid halide perovskites (LHHPs) rise up a wide range of useful optoelectronic properties thus predetermining the extraordinary high interest to this family of materials. Nevertheless, the influence of different types of distortions of their inorganic framework on key physical properties such as band gap has not yet been quantitatively identified. We provided a systematic study of the relationships between LHHPs band gaps and six main structural descriptors of inorganic framework, including interlayer distances (dint), in-plane and out-of-plane distortion angles in layers of octahedra ({theta}in,{theta}out), layer shift factor (LSF), axial and equatorial Pb-I bond distances (dax,deq). Using the set on the selected structural distortions we realized the inverse materials design based on multi-step DFT and machine learning approach to search LHHPs with target values of the band gap. The analysis of calculated descriptors band gap dependences for the wide range of generated model structures of (100) single-layered LHHPs results in the following descending order of their importance:dint > {theta}in > dax > LSFmin > {theta}out > deq > LSFmax, and also implies a strong interaction value for some pairs of structural descriptors. Moreover,we found that the structures with completely different distortions of inorganic framework can have similar band gap, as illustrated by a number of both experimental and model structures.
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