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We investigate the nonequilibrium spin polarization due to a temperature gradient in antiferromagnetic insulators, which is the magnonic analogue of the inverse spin-galvanic effect of electrons. We derive a linear response theory of a temperature-gradient-induced spin polarization for collinear and noncollinear antiferromagnets, which comprises both extrinsic and intrinsic contributions. We apply our theory to several noncentrosymmetric antiferromagnetic insulators, i.e., to a one-dimensional antiferromagnetic spin chain, a single layer of kagome noncollinear antiferromagnet, e.g., $text{KFe}_3(text{OH})_6(text{SO}_4)_2$, and a noncollinear breathing pyrochlore antiferromagnet, e.g., LiGaCr$_4$O$_8$. The shapes of our numerically evaluated response tensors agree with those implied by the magnetic symmetry. Assuming a realistic temperature gradient of $10 text{K}/text{mm}$, we find two-dimensional spin densities of up to $sim 10^6hbar/text{cm}^2$ and three-dimensional bulk spin densities of up to $sim 10^{14}hbar/text{cm}^3$, encouraging an experimental detection.
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We theoretically propose a gigantic orbital Edelstein effect in topological insulators and interpret the results in terms of topological surface currents. We numerically calculate the orbital Edelstein effect for a model of a three-dimensional Chern insulator as an example. Furthermore, we calculate the orbital Edelstein effect as a surface quantity using a surface Hamiltonian of a topological insulator, and numerically show that it well describes the results by direct numerical calculation. We find that the orbital Edelstein effect depends on the local crystal structure of the surface, which shows that the orbital Edelstein effect cannot be defined as a bulk quantity. We propose that Chern insulators and Z_2 topological insulators can be a platform with a large orbital Edelstein effect because current flows only along the surface. We also propose candidate topological insulators for this effect. As a result, the orbital magnetization as a response to the current is much larger in topological insulators than that in metals by many orders of magnitude.
We describe the features of magnonic crystals based upon antiferromagnetic elements. Our main results are that with a periodic modulation of either magnetic fields or system characteristics, such as the anisotropy, it is possible to tailor the spin wave spectra of antiferromagnetic systems into a band-like organization that displays a segregation of allowed and forbidden bands. The main features of the band structure, such as bandwidths and bandgaps, can be readily manipulated. Our results provide a natural link between two steadily growing fields of spintronics: antiferromagnetic spintronics and magnonics.
Hybrid structures of quantum spin-Hall insulators (QSHIs) and superconductors (Ss) present a unique opportunity to access dissipationless topological states of matter, which, however, is frequently hindered by the lack of control over the spin polarization in QSHIs. We propose a very efficient spin-polarization mechanism based on the magnetoelectric (Edelstein) effect in superconducting QSHI structures. It acts akin to the Zeeman splitting in an external magnetic field, but with an effective $g$-factor of order of 1000, resulting in an unprecedented spin-splitting effect. It allows a magnetic control of the QSHI/S hybrids without destroying superconductivity. As an example, we demonstrate a recurrent crossover from $Phi_0$ - to $Phi_0/2$ - periodic oscillations of the Josephson current in an rf superconducting quantum interference device ($Phi_0=h/2e$ is the magnetic flux quantum). The predicted period halving is a striking manifestation of $0-pi$ Josephson transitions with a superharmonic $pi$-periodic current-phase relationship at the transition. Such controllable $0-pi$ transitions may offer new perspectives for dissipationless spintronics and engineering flux qubits.
It is well known that a current driven through a two-dimensional electron gas with Rashba spin-orbit coupling induces a spin polarization in the perpendicular direction (Edelstein effect). This phenomenon has been extensively studied in the linear response regime, i.e., when the average drift velocity of the electrons is a small fraction of the Fermi velocity. Here we investigate the phenomenon in the nonlinear regime, meaning that the average drift velocity is comparable to, or exceeds the Fermi velocity. This regime is realized when the electric field is very large, or when electron-impurity scattering is very weak. The quantum kinetic equation for the density matrix of noninteracting electrons is exactly and analytically solvable, reducing to a problem of spin dynamics for unpaired electrons near the Fermi surface. The crucial parameter is $gamma=eEL_s/E_F$, where $E$ is the electric field, $e$ is the absolute value of the electron charge, $E_F$ is the Fermi energy, and $L_s = hbar/(2malpha)$ is the spin-precession length in the Rashba spin-orbit field with coupling strength $alpha$. If $gammall1$ the evolution of the spin is adiabatic, resulting in a spin polarization that grows monotonically in time and eventually saturates at the maximum value $n(alpha/v_F)$, where $n$ is the electron density and $v_F$ is the Fermi velocity. If $gamma gg 1$ the evolution of the spin becomes strongly non-adiabatic and the spin polarization is progressively reduced, and eventually suppressed for $gammato infty$. We also predict an inverse nonlinear Edelstein effect, in which an electric current is driven by a magnetic field that grows linearly in time. The conductivities for the direct and the inverse effect satisfy generalized Onsager reciprocity relations, which reduce to the standard ones in the linear response regime.
The control of a ferromagnets magnetization via only electric currents requires the efficient generation of current-driven spin-torques. In magnetic structures based on topological insulators (TIs) current-induced spin-orbit torques can be generated. Here we show that the addition of graphene, or bilayer graphene, to a TI-based magnetic structure greatly enhances the current-induced spin density accumulation and significantly reduces the amount of power dissipated. We find that this enhancement can be as high as a factor of 100, giving rise to a giant Edelstein effect. Such a large enhancement is due to the high mobility of graphene (bilayer graphene) and to the fact that the graphene (bilayer graphene) sheet very effectively screens charge impurities, the dominant source of disorder in topological insulators. Our results show that the integration of graphene in spintronics devices can greatly enhance their performance and functionalities.
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