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Register a new userGenerating few-cycle pulses with integrated nonlinear photonics
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Ultrashort laser pulses that last only a few optical cycles have been transformative tools for studying and manipulating light--matter interactions. Few-cycle pulses are typically produced from high-peak-power lasers, either directly from a laser oscillator, or through nonlinear effects in bulk or fiber materials. Now, an opportunity exists to explore the few-cycle regime with the emergence of fully integrated nonlinear photonics. Here, we experimentally and numerically demonstrate how lithographically patterned waveguides can be used to generate few-cycle laser pulses from an input seed pulse. Moreover, our work explores a design principle in which lithographically varying the group-velocity dispersion in a waveguide enables the creation of highly constant-intensity supercontinuum spectra across an octave of bandwidth. An integrated source of few-cycle pulses could broaden the range of applications for ultrafast light sources, including supporting new lab-on-a-chip systems in a scalable form factor.
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Gallium nitride (GaN) as a wide-band gap material has been widely used in solid-state lighting. Thanks to its high nonlinearity and high refractive index contrast, GaN-on-insulator (GaNOI) is also a promising platform for nonlinear optical applications. Despite its intriguing optical proprieties, nonlinear applications of GaN have rarely been studied due to the relatively high optical loss of GaN waveguides (2 dB/cm). In this letter, we report GaNOI microresonator with intrinsic quality factor over 2 million, corresponding to an optical loss of 0.26 dB/cm. Parametric oscillation threshold power as low as 8.8 mW is demonstrated, and the experimentally extracted nonlinear index of GaN at telecom wavelengths is estimated to be n2 = 1.2*10 -18 m2W-1, which is comparable with silicon. Single soliton generation in GaN is implemented by an auxiliary laser pumping scheme, so as to mitigate the high thermorefractive effect in GaN. The large intrinsic nonlinear refractive index, together with its broadband transparency window and high refractive index contrast, make GaNOI a most balanced platform for chip-scale nonlinear applications.
Integrated photonics plays a central role in modern science and technology, enabling experiments from nonlinear science to quantum information, ultraprecise measurements and sensing, and advanced applications like data communication and signal processing. Optical materials with favorable properties are essential for nanofabrication of integrated-photonics devices. Here we describe a material for integrated nonlinear photonics, tantalum pentoxide (Ta$_2$O$_5$, hereafter tantala), which offers low intrinsic material stress, low optical loss, and efficient access to Kerr-nonlinear processes. We utilize >800-nm thick tantala films deposited via ion-beam sputtering on oxidized silicon wafers. The tantala films contain a low residual tensile stress of 38 MPa, and they offer a Kerr index $n_2$=6.2(23)$times10^{-19}$ m$^2$/W, which is approximately a factor of three higher than silicon nitride. We fabricate integrated nonlinear resonators and waveguides without the cracking challenges that are prevalent in stoichiometric silicon nitride. The tantala resonators feature an optical quality factor up to $3.8times10^6$, which enables us to generate ultrabroad-bandwidth Kerr-soliton frequency combs with low threshold power. Moreover, tantala waveguides enable supercontinuum generation across the near-infrared from low-energy, ultrafast seed pulses. Our work introduces a versatile material platform for integrated, low-loss nanophotonics that can be broadly applied and enable heterogeneous integration.
BGGSe is a newly developed nonlinear material that is attractive for ultrabroad frequency mixing and ultrashort pulse generation due to its comparably low dispersion and high damage threshold.In a first experiment, we show that a long crystal length of 2.6 mm yields a pulse energy of 21 pJ at 100 MHz with a spectral bandwidth covering 5.8 to 8.5 microns. The electric field of the carrier-envelope-phase stable pulse is directly measured with electro-optical sampling and reveals a pulse duration of 91 fs, which corresponds to sub-four optical cycles, thus confirming some of the prospects of the material for ultrashort pulse generation and mid-infrared spectroscopy.
As a new group of advanced 2D layered materials, bismuth oxyhalides, i.e., BiOX (X = Cl, Br, I), have recently become of great interest. In this work, we characterize the third-order optical nonlinearities of BiOBr, an important member of the BiOX family. The nonlinear absorption and Kerr nonlinearity of BiOBr nanoflakes at both 800 nm and 1550 nm are characterized via the Z-Scan technique. Experimental results show that BiOBr nanoflakes exhibit a large nonlinear absorption coefficient = b{eta} = 10-7 m/W as well as a large Kerr coefficient n2 = 10-14 m2/W. We also note that the n2 of BiOBr reverses sign from negative to positive as the wavelength is changed from 800 nm to 1550 nm. We further characterize the thickness-dependent nonlinear optical properties of BiOBr nanoflakes, finding that the magnitudes of b{eta} and n2 increase with decreasing thickness of the BiOBr nanoflakes. Finally, we integrate BiOBr nanoflakes into silicon integrated waveguides and measure their insertion loss, with the extracted waveguide propagation loss showing good agreement with mode simulations based on ellipsometry measurements. These results confirm the strong potential of BiOBr as a promising nonlinear optical material for high-performance hybrid integrated photonic devices.
We report on the nonlinear temporal compression of mJ energy pulses from a Ti:Sa chirped pulse amplifier system in a multipass cell filled with argon. The pulses are compressed from 30 fs down to 5.3 fs, corresponding to two optical cycles. The post-compressed beam exhibits excellent spatial quality and homogeneity. These results pave the way to robust and energy-scalable compression of Ti:Sa pulses down to the few-cycle regime.
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