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Register a new userSparse sampling approach to efficient ab initio calculations at finite temperature
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Efficient ab initio calculations of correlated materials at finite temperature require compact representations of the Greens functions both in imaginary time and Matsubara frequency. In this paper, we introduce a general procedure which generates sparse sampling points in time and frequency from compact orthogonal basis representations, such as Chebyshev polynomials and intermediate representation (IR) basis functions. These sampling points accurately resolve the information contained in the Greens function, and efficient transforms between different representations are formulated with minimal loss of information. As a demonstration, we apply the sparse sampling scheme to diagrammatic $GW$ and GF2 calculations of a hydrogen chain, of noble gas atoms and of a silicon crystal.
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This lecture note reviews recently proposed sparse-modeling approaches for efficient ab initio many-body calculations based on the data compression of Greens functions. The sparse-modeling techniques are based on a compact orthogonal basis representation, intermediate representation (IR) basis functions, for imaginary-time and Matsubara Greens functions. A sparse sampling method based on the IR basis enables solving diagrammatic equations efficiently. We describe the basic properties of the IR basis, the sparse sampling method and its applications to ab initio calculations based on the GW approximation and the Migdal-Eliashberg theory. We also describe a numerical library for the IR basis and the sparse sampling method, irbasis, and provide its sample codes. This lecture note follows the Japanese review article [H. Shinaoka et al., Solid State Physics 56(6), 301 (2021)].
A degenerate perturbation $kcdot p$ approach for effective mass calculations is implemented in the all-electron density functional theory (DFT) package WIEN2k. The accuracy is tested on major group IVA, IIIA-VA, and IIB-VIA semiconductor materials. Then, the effective mass in graphene and CuI with defects is presented as illustrative applications. For states with significant Cu-d character additional local orbitals with higher principal quantum numbers (more radial nodes) have to be added to the basis set in order to converge the results of the perturbation theory. Caveats related to a difference between velocity and momentum matrix elements are discussed in the context of application of the method to non-local potentials, such as Hartree-Fock/DFT hybrid functionals and DFT+U.
We present a variational density matrix approach to the thermal properties of interacting fermions in the continuum. The variational density matrix is parametrized by a permutation equivariant many-body unitary transformation together with a discrete probabilistic model. The unitary transformation is implemented as a quantum counterpart of neural canonical transformation, which incorporates correlation effects via a flow of fermion coordinates. As the first application, we study electrons in a two-dimensional quantum dot with an interaction-induced crossover from Fermi liquid to Wigner molecule. The present approach provides accurate results in the low-temperature regime, where conventional quantum Monte Carlo methods face severe difficulties due to the fermion sign problem. The approach is general and flexible for further extensions, thus holds the promise to deliver new physical results on strongly correlated fermions in the context of ultracold quantum gases, condensed matter, and warm dense matter physics.
We discuss a general approach to a realistic theory of the electronic structure in materials containing correlated d- or f- electrons. The main feature of this approach is the taking into account the energy dependence of the electron self-energy with the momentum dependence being neglected (local approximation). In the case of strong interactions (U/W>>1 - rare-earth system) the Hubbard-I approach is the most suitable. Starting from an exact atomic Green function with the constrained density matrix the band structure problem is formulated as the functional problem on Nmm for f-electrons and the standard LDA-functional for delocalized electrons. In the case of moderate correlations (U/W=1 metal-insulator regime) we start from the dynamical mean field iterative perturbation scheme (IPS) of G. Kotliar et. al. and also make use of our multiband atomic Green function. Finally for the weak interactions (U/W<1 -transition metals) the self-consistent diagrammatic fluctuation- exchange (FLEX)-approach of N. Bickers and D. Scalapino is generalized to the realistic multiband case. We presents two-band, two-dimensional model calculations for all three regimes. A realistic calculation in Hubbard-I scheme with the exact solution of the on-site multielectron problem for f(d)- shells was performed for mixed-valence 4f compound TmSe, and for the classical Mott insulator NiO.
We propose an approach for the ab initio calculation of materials with strong electronic correlations which is based on all local (fully irreducible) vertex corrections beyond the bare Coulomb interaction. It includes the so-called GW and dynamical mean field theory and important non-local correlations beyond, with a computational effort estimated to be still manageable.
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