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Register a new userBound states in the continuum of higher-order topological insulators
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Added by
Wladimir A. Benalcazar
Publication date
2019
fields
Physics
and research's language is
English
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We show that lattices with higher-order topology can support corner-localized bound states in the continuum (BICs). We propose a method for the direct identification of BICs in condensed matter settings and use it to demonstrate the existence of BICs in a concrete lattice model. Although the onset for these states is given by corner-induced filling anomalies in certain topological crystalline phases, additional symmetries are required to protect the BICs from hybridizing with their degenerate bulk states. We demonstrate the protection mechanism for BICs in this model and show how breaking this mechanism transforms the BICs into higher-order topological resonances. Our work shows that topological states arising from the bulk-boundary correspondence in topological phases are more robust than previously expected, expanding the search space for crystalline topological phases to include those with boundary-localized BICs or resonances.
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Higher-order topological insulators are a recently discovered class of materials that can possess zero-dimensional localized states regardless of the dimension of the lattice. Here, we experimentally demonstrate that the topological corner-localized modes of higher-order topological insulators can be symmetry protected bound states in the continuum; these states do not hybridize with the surrounding bulk states of the lattice even in the absence of a bulk bandgap. As such, this class of structures has potential applications in confining and controlling light in systems that do not support a complete photonic bandgap.
Higher-order topological insulators (HOTIs) are recently discovered topological phases, possessing symmetry-protected corner states with fractional charges. An unexpected connection between these states and the seemingly unrelated phenomenon of bound states in the continuum (BICs) was recently unveiled. When nonlinearity is added to a HOTI system, a number of fundamentally important questions arise. For example, how does nonlinearity couple higher-order topological BICs with the rest of the system, including continuum states? In fact, thus far BICs in nonlinear HOTIs have remained unexplored. Here, we demonstrate the interplay of nonlinearity, higher-order topology, and BICs in a photonic platform. We observe topological corner states which, serendipitously, are also BICs in a laser-written second-order topological lattice. We further demonstrate nonlinear coupling with edge states at a low nonlinearity, transitioning to solitons at a high nonlinearity. Theoretically, we calculate the analog of the Zak phase in the nonlinear regime, illustrating that a topological BIC can be actively tuned by both focusing and defocusing nonlinearities. Our studies are applicable to other nonlinear HOTI systems, with promising applications in emerging topology-driven devices.
The bulk-boundary correspondence, which links a bulk topological property of a material to the existence of robust boundary states, is a hallmark of topological insulators. However, in crystalline topological materials the presence of boundary states in the insulating gap is not always necessary since they can be hidden in the bulk energy bands, obscured by boundary artifacts of non-topological origin, or, in the case of higher-order topology, they can be gapped altogether. Crucially, in such systems the interplay between symmetry-protected topology and the corresponding symmetry defects can provide a variety of bulk probes to reveal their topological nature. For example, bulk crystallographic defects, such as disclinations and dislocations, have been shown to bind fractional charges and/or robust localized bound states in insulators protected by crystalline symmetries. Recently, exotic defects of translation symmetry called partial dislocations have been proposed as a probe of higher-order topology. However, it is a herculean task to have experimental control over the generation and probing of isolated defects in solid-state systems; hence their use as a bulk probe of topology faces many challenges. Instead, here we show that partial dislocation probes of higher-order topology are ideally suited to the context of engineered materials. Indeed, we present the first observations of partial-dislocation-induced topological modes in 2D and 3D higher-order topological insulators built from circuit-based resonator arrays. While rotational defects (disclinations) have previously been shown to indicate higher-order topology, our work provides the first experimental evidence that exotic translation defects (partial dislocations) are bulk topological probes.
In this work, we study the disorder effects on the bulk-boundary correspondence of two-dimensional higher-order topological insulators (HOTIs). We concentrate on two cases: (i) bulk-corner correspondence, (ii) edge-corner correspondence. For the bulk-corner correspondence case, we demonstrate the existence of the mobility gaps and clarify the related topological invariant that characterizes the mobility gap. Furthermore, we find that, while the system preserves the bulk-corner correspondence in the presence of disorder, the corner states are protected by the mobility gap instead of the bulk gap. For the edge-corner correspondence case, we show that the bulk mobility gap and edge band gaps of HOTIs are no longer closed simultaneously. Therefore, a rich phase diagram is obtained, including various disorder-induced phase transition processes. Notably, a disorder-induced transition from the non-trivial to trivial phase is realized, distinguishing the HOTIs from the other topological states. Our results deepen the understanding of bulk-boundary correspondence and enrich the topological phase transitions of disordered HOTIs.
We explore theoretically the formation of bound states in the continuum (BICs) in graphene hosting two collinear adatoms situated at different sides of the sheet and at the center of the hexagonal cell, where a phantom atom of a fictitious lattice emulates the six carbons of the cell. We verify that in this configuration the local density of states (LDOS) near the Dirac points exhibits two characteristic features: i) the cubic dependence on energy instead of the linear one for graphene as found in New J. Phys. 16, 013045 (2014) and ii) formation of BICs as aftermath of a Fano destructive interference assisted by the Coulomb correlations in the adatoms. For the geometry where adatoms are collinear to carbon atoms, we report absence of BICs.
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